8X10X1 Search Results

RF3283

Abstract: DCS1800 GSM900 RF3283PCBA-41X RF3283SB SW-DIP-4 rx2 1150 Log rx2 1150
Contextual Info: RF3283 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE RoHS Compliant & Pb-Free Product Package Style: Module 8mmx10mm GSM GaAs PA TXIN_LB 22 Features pHEMT Switch „ Package 8x10x1.4mm „ GSM900 POUT 33.3dBm „ DCS1800 POUT 32.0dBm „ „ „ „ „ TX_EN 25 VRAMP 26

TXM RX-3

Contextual Info: RF3283 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE RoHS Compliant & Pb-Free Product Package Style: Module 8mmx10mm GSM GaAs PA TXIN_LB 22 Features pHEMT Switch ̈ Package 8x10x1.4mm ̈ GSM900 POUT 33.3dBm ̈ DCS1800 POUT 32.0dBm ̈ Integrated Antenna Switch and

JS28F256P33

Abstract: PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85
Contextual Info: Numonyx StrataFlash Embedded Memory P33 Datasheet Product Features „ „ „ „ High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst

128W18

Abstract: 28f128w18t Intel SCSP 28F128W18B 28F640W18T 128W-1 128W18B micron flash otp
Contextual Info: 128-Mbit 1.8 Volt Intel Wireless Flash Memory W18 + 32-Mbit PSRAM Stacked-CSP Family Datasheet Product Features • ■ ■ ■ Flash Architecture — Flexible, Multiple-Partition, DualOperation: Read-While-Write / ReadWhile-Erase — 32 Partitions, 4 Mbits each

Halbleiterbauelemente DDR

Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C
Contextual Info: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs­ temperatur von 25 °C angegeben.

pc28f128p33b

Abstract: PC28F128P33 JS28F128P33BF js28f640p33 pc28f128p33bf60 P33-65nm RC28F128P33 JS28F128P33TF70 JS28F128P33 PC28F128P33T
Contextual Info: Numonyx AxcellTM P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell SBC Datasheet Product Features „ „ „ High performance: — 60ns initial access time for Easy BGA — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read

pc28f00ap33

Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
Contextual Info: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer

PF38F2030

Abstract: 38F1030W0ZTQ0 PF38F2030W0YTQE 64W18 251407 PF38F1030W PF38F 38F1030W0ZBQ0
Contextual Info: Intel Wireless Flash Memory W18/W30 SCSP 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit

JS28F256P30

Abstract: PC28F256P30T85 js28f128p30 RC28F640P30B85 RC48F4400P0VB00 JS28F256P30B95 JS28F256P30T95 JS28F128P30T PC28F128P30B85 JS28F128P30B85
Contextual Info: Intel StrataFlash Embedded Memory P30 Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

Contextual Info: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode

PF38F4050L0ZTQ0

Abstract: PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
Contextual Info: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 768-Mbit LQ Family with Asynchronous PSRAM/SRAM Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash die density: 128-, 256-Mbit — Async PSRAM density: 16-, 32-, 64-Mbit — Async SRAM density: 8-Mbit

Contextual Info: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous

JS28F256P30

Abstract: JS28F256P30T95 JS28F256P30B95 PC28F256P30T85 JS28F256P30T js48f4400p0vb00 RC48F4400P0VB00 JS28F128P30T85 PC28F256P30B85 PC28F640P30T85
Contextual Info: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode

Stacked 4MB NOR FLASH & SRAM with AD multiplexed

Abstract: FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball
Contextual Info: Numonyx Wireless Flash Memory W18 with AD Multiplexed IO Datasheet Product Features „ „ „ High Performance Read-While-Write/Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed

252063

Contextual Info: Intel Wireless Flash Memory W18/W30 SCSP 128-Mbit WQ Family with Asynchronous SRAM Datasheet • Flash Architecture — Flexible, Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 32 Partitions, 4 Mbits each —31 Main Partitions, 8 Main Blocks each

251903

Abstract: 290737
Contextual Info: Intel StrataFlash Wireless Memory L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 52 mHz with zero wait state, 17 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode

PF38F4060

Abstract: PF38F4060M SCSP M18 PF38F4050 PF38F4060M0y 3076* intel 3098* intel tba 790
Contextual Info: Intel StrataFlash Cellular Memory M18 SCSP 2048-Mbit M18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ „ Device Architecture — Flash Die Density: 256, 512 Mbit, or 1 Gbit — PSRAM Die Density: 64 or 128 Mbit — x16 Non-Mux or AD-Mux I/O Interface

Contextual Info: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase ■ Security — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode

SCSP M18

Abstract: PF38F 3098* intel PF38F4050
Contextual Info: Intel StrataFlash Cellular Memory M18 Datasheet Product Features High performance Read, Program and Erase — 93 ns initial access for reads — 512-Mbit device: 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 256-Mbit device: 133 MHz with zero wait-state

Contextual Info: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 52MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode

28F128L18

Abstract: 28F256L18 28F640L18 28F128
Contextual Info: 1.8 Volt Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 54MHz with zero wait state, 14 ns clock-to-data output synchronous-burst mode

PF38F1030W0YTQ2

Abstract: pf38f1030w0ybq2 FLASH MEMORY 38F 38F1030 PF38F2030W0YTQF W18 88 w18 63 FLASH MEMORY 48F intel flash memory intel flash memory W18
Contextual Info: Intel Wireless Flash Memory W18/W30 SCSP 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 8-, 16-, 32Mbit; Async SRAM Density: 4-, 8-, 16Mbit

64W18

Abstract: FLASH MEMORY 38F W18 88 FLASH MEMORY 48F 64WQ 251407 PF38F2030W0YTQE PF38F2030W0YTQ1
Contextual Info: Intel Wireless Flash Memory W18/W30 SCSP 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter

28F128L30

Abstract: 28F256L30 28F640L30
Contextual Info: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 52MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode