FDIP40W Search Results

Contextual Info: M27C202 2 Mbit 128Kb x 16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: - Active Current 50mA at 5MHz - Standby Current 1OOjaA ■ PROGRAMMING VOLTAGE: 12.7 5 V ± 0.25V FDIP40W (F)

M27C4002

Abstract: JLCC44W PLCC44 Q0-Q15
Contextual Info: M27C4002 4 Megabit 256K x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 70ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 50mA at 5MHz – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 24sec.

Contextual Info: / T T S G S 'T H O M S O N ^ 7 # GfflDIIMilLIOTMOISi M 27V102 LOW VOLTAGE 1 Megabit 64Kx16 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V > FAST ACCESS TIME: 90ns ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 35mA - Standby Current 100|jA

Contextual Info: r z j ^7#« S G S -m 0 M S 0 N MD SIM ilLS fi©li5ID©$ M 27C 1024 CMOS 1Megabit (64K x16) UV EPROM and OTP ROM • FAST ACCESS TIME: 80ns ■ COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS" CONSUMPTION: - Active Current 35mA

M27C1024

Abstract: st m27c1024 PDIP40 PLCC44 Q0-Q15
Contextual Info: M27C1024 1 Mbit 64Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz 40 40 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

M27C202

Abstract: PDIP40 PLCC44 Q0-Q15
Contextual Info: M27C202 2 Mbit 128Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER CONSUMPTION: – Active Current 50mA at 5MHz – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■ PROGRAMMING TIME: 100µs/word

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

M27C4002

Abstract: M27V402 M27W402 PLCC44 Q0-Q15 a17 6 pin
Contextual Info: M27V402 LOW VOLTAGE 4 Megabit 256K x 16 UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 15mA – Standby Current 20µA PROGRAMMING VOLTAGE: 12.75V PROGRAMMING TIMES of AROUND 24sec.

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

M27W402

Abstract: PLCC44 Q0-Q15
Contextual Info: M27W402 4 Mbit 256Kb x 16 Low Voltage UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 2.7V to 3.6V FAST ACCESS TIME: – 80ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V LOW POWER CONSUMPTION: – Active Current 15mA – Standby Current 20µA

M27C1024

Abstract: PLCC44 Q0-Q15
Contextual Info: M27C1024 1 Megabit 64K x16 UV EPROM and OTP ROM FAST ACCESS TIME: 70ns COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE LOW POWER ”CMOS” CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

M27C400

Abstract: PDIP40 Q15A
Contextual Info: M27C400 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 55ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 4 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION – Active Current 70mA at 8MHz

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

M27C1002

Abstract: PDIP40 PLCC44 Q0-Q15 M27C1024 M27W102
Contextual Info: M27W102 1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ■ READ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C1024 ■ LOW POWER CONSUMPTION: – 15µA max Standby Current

M27V102

Abstract: M27W102 PDIP40 PLCC32 PLCC44 Q0-Q15
Contextual Info: M27V102 1 Mbit 64Kb x16 Low Voltage UV EPROM and OTP EPROM NOT FOR NEW DESIGN • M27V102 is replaced by the M27W102 ■ LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION: 40 40 – Active Current 15mA at 5MHz – Standby Current 20µA

M27C4002

Abstract: JESD97 PDIP40 PLCC44 Q0-Q15
Contextual Info: M27C4002 4 Mbit 256Kb x16 UV EPROM and OTP EPROM Feature summary • 5V ± 10% Supply voltage for Read operations ■ Access time: 45ns ■ Low Power consumption – Active Current 70mA at 10MHz – Standby current 100µa ■ Programming Voltage: 12.75V ± 0.25V

Contextual Info: M27C1024 1 Mbit 64Kb x16 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz 40 40 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

M27C1024

Abstract: PLCC44 Q0-Q15
Contextual Info: M27C1024 1 Mb 64K x 16 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME of AROUND 6 sec.

Contextual Info: M27V402 LOW VOLTAGE 4 Megabit 256K x 16 UV EPROM and OTP EPROM PRELIMINARY DATA LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 15mA – Standby Current 20µA PROGRAMMING VOLTAGE: 12.75V

Contextual Info: M27V402 LOW VOLTAGE 4 Megabit 256K x 16 UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 120ns LOW POWER ”CMOS” CONSUMPTION: – Active Current 15mA – Standby Current 20µA PROGRAMMING VOLTAGE: 12.75V PROGRAMMING TIMES of AROUND 24sec.

m27c56

Abstract: M27C516
Contextual Info: [ Z J SGS-THOMSON M27C516 CMOS 512K 32K x 16 UV EPROM and OTP ROM • FAST ACCESS TIME: 120ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 200|xA ■ PROGRAMMING VOLTAGE: 12.75V

Contextual Info: /= T SGS-IUOMSON M27C1024 CMOS 1Megabit 64K x16 UV EPROM and OTP ROM • FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 35mA - Standby Current 100|xA ■ PROGRAMMING VOLTAGE: 12.75V

27C4002

Abstract: 12V fluo HN27C4096ACC-10 27C4002
Contextual Info: *¿7=#7. SGS-1H0MS0N M !MI[Li(gïï (Q [10(êS M27C4002 CMOS 4 Megabit (256K x 16) UV EPROM and OTP ROM • VERY FAST ACC ESS TIME: 100ns ■ CO M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZER O W AIT STATE ■ LOW POWER “CM OS” CONSUMPTION: - Active Current 50m A at 5MHz

M27C1024

Abstract: PLCC44 Q0-Q15
Contextual Info: M27C1024 1 Mbit 64Kb x 16 UV EPROM and OTP EPROM DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Current 35mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME of AROUND 6 sec.