A17CZ Search Results

Contextual Info: w # S G S -T H O M S O N M27V160 V # « RitlD M li[Lli©inS lii!lD©i 16 Mb 2Mb x 8 or 1Mb x 16) LOW VOLTAGE UV EPROM and OTP EPROM NOT FOR NEW DESIGN • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 110ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE

Contextual Info: £ ÿ j S G S ‘ T H O M S O N Hffi 5 [gfL.II(aiïïKÎ(B)M(Sg M27W401 VERY LOW VOLTAGE 4 Megabit (512K x 8) OTP ROM • VERY LOW VOLTAGE READ OPERATION: 2.7V to 5.5V ■ ACCESS TIME: - 150ns(T a =0 to 70 °C) - 200ns (T a = -20 to 70 °C) - LOW POWER "CMOS” CONSUMPTION:

a01494

Abstract: A19C Z3A18 ZDA17
Contextual Info: r z ^ T j S G S -T H O M S O N # . M28F841 IM 1 0 g [S [1 0 = [lO T (S M lB ( g S 8 Megabit (1 Meg x 8, Sector Erase) FLASH MEMORY PREUMI NARY DATA • SMALLS1ZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each

Contextual Info: HN62W448N Series 524288-word x 16-bit/l048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-484 A (Z) Preliminary Rev. 0.1 Jun. 20, 1996 Description The Hitachi HN62W448N is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-words by 16-bits or as 1048576-words by 8-bits. Realizing low power consumption with low voltage operation, this

Contextual Info: •HYUNDAI •■ ■ » * * iii HY29F016 2Mx 8 bjt CMQS 5 Qv ^ n|y Sector Erase F[ash Memory Advanced Information DESCRIPTION The HY29F016 is a 16Mbit, 5.0V-only Flash memory organized as 2Mbytes of 8 bits each. The 2Mbytes of data is organized as 32 sectors of 64K bytes for flexible erase capability. The 8 bits of data will appear on DQ0-DQ7.

Contextual Info: SGS-THOMSON M27V402 R f f lD ^ [ llL liO T IjîO ll i LOW VOLTAGE _ 4 Megabit 256K x 16 UV EPROM and OTP EPROM PRELIMINARY DATA • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 120ns ■ LOW POW ER ’’CMOS” CONSUMPTION:

Z3A11

Abstract: A10113 M28F410 M28F420 TSOP56
Contextual Info: M28F410 M28F420 SGS‘THOMSON G ì . H O » iL I § T [ M ! [ l( S Ì 4 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or

Z3B14

Abstract: LB-17
Contextual Info: 3.3 VOLT CMOS SyncFIFO 6 4x 3 6 PRELIMINARY IDT72V3611 Integrated Device Technology, Inc. FEATURES: • • • • • • • • • 64 x 36 storage capacity Supports clock frequencies up to 67MHz Fast access times of 10ns Free-running CLKA and CLKB may be asynchronous or

Contextual Info: _M27V160 16 Mbit 2Mb x8 or 1Mb x 16 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 16 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION

M68000

Abstract: MC68000 MC68008 SCR Manual, General electric "m68000 family reference manual" MC68000 technical specs CRC-16 MC145474 MC68302 M68000 64 pin
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC68302 Technical Sum m ary Integrated Multiprotocol Processor IMP The IMP is a very large-scale integration (VLSI) device incorporating the main building blocks needed for the design of a wide variety of controllers. The

Contextual Info: S G S -1 H 0 M S 0 N M28F151 [^ a g ^ ( Q g L [i W ( Q ) R { ]D © S 1.5 Megabit (192K x 8, Chip Erase) FLASH MEMORY PRODUCT PREVIEW • VALID MEMORY ADDRESS SPACE: OOOOOh to 2FFFFh ■ FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp.

27V160

Contextual Info: M27V160 16 Mbit 2Mb x 8 or 1Mb x 16 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 110ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE ■ 16 Mbit MASK ROM REPLACEMENT ■ LOW POWER CONSUMPTION - Active Current 30mA at 8MHz

n25Z

Abstract: Z17D A3ZD
Contextual Info: M29W800T M29W800B SGS-THOMSON 8 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME ■ 10(is by Byte / 1 6|.is by Word typical