M27W160 Search Results

M27W160

Abstract: PDIP42 Q15A
Contextual Info: M27W160 16 Mbit x8/x16 Low Voltage UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 2.7V to 3.6V FAST ACCESS TIME: – 100ns at VCC = 3.0V to 3.6V – 120ns at VCC = 2.7V to 3.6V BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Mbit MASK ROM REPLACEMENT

Contextual Info: w # S G S -T H O M S O N M27V160 V # « RitlD M li[Lli©inS lii!lD©i 16 Mb 2Mb x 8 or 1Mb x 16) LOW VOLTAGE UV EPROM and OTP EPROM NOT FOR NEW DESIGN • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 110ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

M27C160

Abstract: M27V160 M27W160 Q15A
Contextual Info: M27V160 16 Mb 2Mb x 8 or 1Mb x 16 LOW VOLTAGE UV EPROM and OTP EPROM NOT FOR NEW DESIGN LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz

27C 0626

Contextual Info: £ÿj SGS-THOMSON D ii©l[LI ê,in^@lü!lD(gi M 27W 160 16 Mbit (x8/x16 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 100ns at Vcc = 3.0V to 3.6V - 120ns at Vcc = 2.7V to 3.6V ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE

asm eagle

Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Contextual Info: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:

M27V160

Abstract: M27W160 M27C160
Contextual Info: . SGS-THOMSON M27V160 k7 # . RfilDÊlMSJlilUKg'inEORODtgi 16 Mb 2Mb x 8 or 1Mb x 16 LOW VOLTAGE UV EPROM and OTP EPROM N O T F O R N E W D E S IG N • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 110ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE

PJ 1179

Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Contextual Info: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a

M27C160

Abstract: M27V160 M27W160 Q15A
Contextual Info: M27V160 16 Mb 2Mb x 8 or 1Mb x 16 LOW VOLTAGE UV EPROM and OTP EPROM DATA BRIEFING LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns BYTE-WIDE or WORD-WIDE CONFIGURABLE 16 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION 44 42 – Active Current 70mA at 8MHz

M93C46BN1

Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA