68U1000B Search Results

KM68U1000BLG8L

Abstract: KM68V1000BLG7L
Contextual Info: KM68V1000B, 68U1000B Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM 68V1000B and KM 68U1000B fam ily are fabricated • O rganization : 128K x8 by SAMSUNG'S advanced CM O S process technology.

KM68U1000B

Abstract: KM68V1000B
Contextual Info: CMOS SRAM KM68V1000B, 68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V 68U1000B family : 3.0V +/- 0.3V

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

KM68U1000BLG8L

Abstract: 32SOP
Contextual Info: KM68V1000B, 68U1000B Family CMOS SRAM 128Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6» «CMOS • Organization : 128K x8 • Power Supply Voltage KM68V1000B family: 3.3V« *0.3V 68U1000B family: 3.0V- -0.3V

km616u1000b

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM616V1000B and KM616U1000B family are • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 um CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

Contextual Info: CMOS SRAM KM68V1000B, 68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process T ec h n o lo g y : 0.6 um C M O S T h e K M 6 8 V 1 0 0 0 B and K M 6 8 U 1 0 0 0 B fam ily are fabricated • O rg a n iz a tio n : 1 2 8 K x 8

VDR 14D

Abstract: zd107
Contextual Info: Preliminary CMOS SRAM 68U1000BLI / Ll-L 128Kx8 Bit Low Voltage & Industrial Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C > Fast Access Time : 70,100ns max. • Low Power Dissipation Standby(CMOS) : 165(iW (max.)L-Version

68U1000

Contextual Info: Preliminary CMOS SRAM 68U1000BLE / LE-L 128Kx8 Bit Low Voltage & Extended Temperature Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast A ccess Time : 70,100ns max. • Low Power Dissipation Standby(CMOS) : 165nW (max.)L-Version