KM616V1000 Search Results

KM616U1000BLT-10L

Abstract: KM616U1000BLTI-10L KM616U1000B KM616V1000B KM616V1000BLT-7L
Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0

SRAM 64Kx16

Contextual Info: Preliminary KM616V1OOOBLI / Ll-L CMOS SRAM 64Kx16 Bit Low Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C The KM616V1000BLI/LI-L is a 1,048,576-bit high • Fast Access Time : 70, 100 ns max.

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64K x16 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCTOPTION • • • • The KM 616V1000B and KM616U1 OOOB fam ily is febricated by SAM SUNG'S advanced CM OS process technology. The fam ily

km616u1000b

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM616V1000B and KM616U1000B family are • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM Document Tills 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Prelim inary 1.0

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 um CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage

100PF

Abstract: 0213T
Contextual Info: Preliminary CMOS SRAM K M 6 1 6 V 1 OOOBL / L-L 64Kx16 B it Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100 ns max. The KM616V1000BL/L-L is a 1,048,576-bit high speed • Low Power Dissipation Static Random Access Memory organized as 65,536

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0 April 13, 1996

KM616U1000B

Abstract: KM616V1000B KM616V1000
Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 urn CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage

Contextual Info: KM616V1000B, KM616U10Q0B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • The KM616V1000B and KM616U1000B family are fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

"30 pin simm"

Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
Contextual Info: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

KM736V789-60

Abstract: 512k*8 sram KM68U4000A
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -

KM616U1000BL-L

Abstract: KM68U512ALE-L
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. Low Power SRAM Low Vcc Operation Density 256K Org. & Op Vcc 32K X 8 KM62V256CL-L (Vcc=3.0~3.6V) 32Kx8 (Vcc=2.7~3.3V) 512K 6 4K X 8 (Vcc=3.0~3.6V) 64KX8 (Vcc=2.7~3.3V) 1M Product No’ 128KX8 (Vcc=3.0~3.6V) Speed 70/100 30/10

KM616U1000BL-L

Contextual Info: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

Contextual Info: Preliminary CMOS SRAM KM616V1OOOBL / L-L 64Kx16 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100 ns max. The KM616V1OOOBL/L-L is a 1,048,576-bit high speed • Low Power Dissipation Static Random Access Memory organized as 65,536

Contextual Info: Preliminary CMOS SRAM KM616V1OOOBLI / Ll-L 64Kx16 Bit Low Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C • Fast Access Time : 70, 100 ns max. • Low Power Dissipation Standby(CMOS): 360|xW(max.)L-Version

KM616V1000B

Contextual Info: K6L1016V3B, K6L1016U3B Family CMOS SRAM Document Title 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Preliminary 1.0 Finalize

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258