KM616V1OOOBL Search Results

KM616V1OOOBL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SRAM 64Kx16 Contextual Info: Preliminary KM616V1OOOBLI / Ll-L CMOS SRAM 64Kx16 Bit Low Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C The KM616V1000BLI/LI-L is a 1,048,576-bit high • Fast Access Time : 70, 100 ns max.	OCR Scan	KM616V1OOOBLI 64Kx16 360nW 216mW I/01-I/08 I/09-I/016 KM616V1000BLTI/LTI-L: 400mil KM616V1000BLRI/LRI-L: SRAM 64Kx16	PDF
Contextual Info: Preliminary CMOS SRAM KM616V1OOOBL / L-L 64Kx16 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100 ns max. The KM616V1OOOBL/L-L is a 1,048,576-bit high speed • Low Power Dissipation Static Random Access Memory organized as 65,536	OCR Scan	KM616V1OOOBL 64Kx16 KM616V1OOOBL/L-L 576-bit 180nW 216mW KM616V1	PDF
Contextual Info: Preliminary CMOS SRAM KM616V1OOOBLI / Ll-L 64Kx16 Bit Low Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C • Fast Access Time : 70, 100 ns max. • Low Power Dissipation Standby(CMOS): 360\|xW(max.)L-Version	OCR Scan	KM616V1OOOBLI 64Kx16 216mW KM616V1000BLI/LI-L 576-bit KM616 002140b	PDF
Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64K x16 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCTOPTION • • • • The KM 616V1000B and KM616U1 OOOB fam ily is febricated by SAM SUNG'S advanced CM OS process technology. The fam ily	OCR Scan	KM616V1000B, KM616U1000B KM616V1OOOB 616U1000B 44-TSQ P2-400F/R 616V1000B KM616U1 KM61SV1000B KM616U10008	PDF
km616u1000b Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM616V1000B and KM616U1000B family are • Organization : 64Kx16 • Data Byte Control : /LB=I/01~8, /UB=I/09~16	OCR Scan	KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP	PDF
Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 um CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage	OCR Scan	KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP 7Tb4142	PDF
100PF Abstract: 0213T Contextual Info: Preliminary CMOS SRAM K M 6 1 6 V 1 OOOBL / L-L 64Kx16 B it Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70, 100 ns max. The KM616V1000BL/L-L is a 1,048,576-bit high speed • Low Power Dissipation Static Random Access Memory organized as 65,536	OCR Scan	KM616V1OOOBL 64Kx16 180nW 54jiW 216mW I/01-I/08 KM616V1000BLT/LT-L: 400mil KM616V1000BLR/LR-L: 100PF 0213T	PDF
KM616U1000B Abstract: KM616V1000B KM616V1000 Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • Process Technology : 0.6 urn CMOS Organization : 64Kx16 Data Byte Control : /LB=I/01~8, /UB=I/09~16 Power Supply Voltage	OCR Scan	KM616V1000B, KM616U1000B 64Kx16 64Kx16 KM616V1000B 44-TSOP als-10 KM616V1000	PDF
Contextual Info: KM616V1000B, KM616U10Q0B Family CMOS SRAM 64Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • The KM616V1000B and KM616U1000B family are fabricated by SAMSUNG’S advanced CMOS process technology. The family can support various operating	OCR Scan	KM616V1000B, KM616U10Q0B 64Kx16 KM616V1000B KM616U1000B 64Kx16 71b4ms GG3b73G	PDF