4MX1 Search Results

K4S641633F

Contextual Info: K4S641633F-R B L/N/P CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S641633F-R(B)L/N/P CMOS SDRAM 1M x 16Bit x 4 Banks SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

K4S64163LF

Contextual Info: K4S64163LF-R B G/S CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)G/S CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

SAMSUNG MCP

Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
Contextual Info: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.

BFR15

Contextual Info: K4S64163LF-R B F/R CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)F/R CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K7M643635M-Q

Contextual Info: K7N643631M K7N641831M Preliminary 2Mx36 & 4Mx18 Pipelined NtRAM TM Document Title 2Mx36 & 4Mx18-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. Sep. 30. 2002 Advance 0.1 1. Delete the speed bins FT : 7.5ns, 8.5ns / PP : 200MHz

Flash MCp nand DRAM 107-ball

Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
Contextual Info: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

Contextual Info: 168PIN PC100 Unbuffered DIMM 32MB With 4M X16 CL3 TS4MLS64V8Z Description Placement The TS4MLS64V8Z is a 4M x 64 bits Synchronous Dynamic RAM high-density for PC-100.The TS4MLS64V8Z consists of 4pcs CMOS 4Mx16 bits Synchronous DRAMs in TSOP-II 400mil packages and

M366S0824ET0

Abstract: M366S0824ET0-C1H M366S0824ET0-C1L
Contextual Info: PC100 Unbuffered DIMM M366S0824ET0 M366S0824ET0 SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0824ET0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

EDI4164MEV50SM

Abstract: EDI4164MEV-RP EDI4164MEV60SM EDI4164MEV70SM 4mx16 edo EDI4164MEV50SI
Contextual Info: EDI4164MEV-RP HI-RELIABILITY PRODUCT 4Mx16 EDO Extended Data Out Dynamic RAM 3.3V FEATURES • 4 Meg x 16 bit CMOS Dynamic RAM ■ RAS - Only, CAS-before-RAS, and HIDDEN refresh capability ■ Package: ■ Low Operating Power Dissipation ■ Access Time: 50, 60 and 70ns

HYM76V4M655HGLT6-8

Abstract: HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S
Contextual Info: 4M x64 bits P C 1 0 0 S D R A M S O D IM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M655HG L T6 Series D E S C R IP T IO N The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

Enhanced SDRAM

Contextual Info: 64Mbit – Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Preliminary Data Sheet Overview Features • • • • • • • • • • • • • • High Performance 166 MHz Superset to SDRAM 100% Pin Compatible with SDRAM 100% Function and Timing Compatible with JEDEC

SM2603

Contextual Info: 64Mbit - Enhanced SDRAM 8Mx8, 4Mx16 ESDRAM Product Brief Features • 100% Pin Compatible with SDRAM • 100% Function and Timing Compatible with JEDEC standard SDRAM • Integrated 16Kbit SRAM Row Cache • Four Bank Architecture • Synchronous Operation up to 166MHz

SM3603

Abstract: Enhanced Memory Systems 8mx8 SM3604T-7
Contextual Info: 64Mbit – High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. While compatible with standard SDRAM, they provide the faster

Contextual Info: K3P7V U 1000B-TC CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.)@CL=50pF,

Contextual Info: Memory Systems Inc. 3 !nd^ st^ TenJPo i S am 64Mbit - High Speed SDRAM 8Mx8, 4Mx16 HSDRAM Preliminary Data Sheet Features Description • • • • The Enhanced Memory Systems SM3603 and SM3604 HighSpeed SDRAM HSDRAM devices are high performance versions of the proposed JEDEC PC-133 SDRAM. The

Contextual Info: 4Mx64 bits PC100 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4655HGT6 Series DESCRIPTION The Hynix HYM76V4655HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4x16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

Contextual Info: UG2M43204 8 RTG(T) 16M Bytes (4M x 32) 72Pin SIMM based on 4M X 16 DRAM General Description Features The UG2M43204(8)RTG(T) is a 4,194,304 bits by 32 SIMM module. The UG2M43204(8)RTG(T) is assembled using 2 pcs of 4Mx16 5V 4K/8K refresh DRAM in 50 Pin TSOP package mounted on a 72 Pin

JEP-106

Abstract: JEP106 mitsubishi year code mitsubishi date code MH4V644AXJJ MH4V644AXJJ-5 MH4V644AXJJ-6 MH4V64AXJJ MH4V64AXJJ-5 MH4V64AXJJ-6
Contextual Info: MITSUBISHI LSIs Preliminary Some of contents are subject to change without notice. MH4V64/644AXJJ-5,-6,-5S,-6S FAST PAGE MODE 268435456-BIT 4194304-WORD BY 64-BIT DYNAMIC RAM DESCRIPTION ADDRESS This is family of 4194304 - word by 64 - bit dynamic RAM module. This consists of four industry standard 4Mx16 dynamic

Contextual Info: IS61DDP2B44M18A/A1/A2 IS61DDP2B42M36A/A1/A2 4Mx18, 2Mx36 72Mb DDR-IIP Burst 4 CIO SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES •                     2Mx36 and 4Mx18 configuration available.

NT56V6610C0T-8A

Abstract: nanya part guide 56 NT56V6610C0T-8B NT56V6610C0T-75B NT56V6610C0T NT56V6610C0T-75 NT56V6620C0T NT56V6620C0T-8A
Contextual Info: NT56V6610C0T NT56V6620C0T 64Mb : x8 x16 PC133 / PC100 Synchronous DRAM NT56V6610C0T 8Mx8 NT56V6620C0T (4Mx16) 64Mb Synchronous DRAM Data Sheet REV 1.1 June, 2000 1 NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

DIMM 1999

Contextual Info: SERIAL PRESENCE DETECT PC100 Unbuffered DIMM PC100 Unbuffered DIMM 168pin 6Layer SPD Specification(64Mb C-die base) Rev. 0.0 July 1999 Rev 0.0 July 1999 SERIAL PRESENCE DETECT PC100 Unbuffered DIMM M366S0424CT0-C80/C1H/C1L • Organization : 4Mx64 • Composition : 4Mx16 *4

Contextual Info: M366S0424DTS PC100 Unbuffered DIMM M366S0424DTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0424DTS is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

TAA 293

Contextual Info: SMART SM5360830U4Q6UU Modular Technologies July 14, 1997 32MByte 8M x 36 DRAM Module - 4Mx16 based 72-pin SIMM with Level Translators Features Part Numbers • • • • • • • • • • SM5360830F4Q6UU SM5360830E4Q6UU Configuration : Parity