001S0 Search Results

PEE1003U

Contextual Info: 1 N AflER PHILIPS/DISCRETE DbE D M A IN T E N A N C E T Y P E S • n D ' J", ‘ J '' ' ■ bb53T31 001S077 □ ■ ^ M, \ PEE1001U PDE1001U FAMILIES JK . M IC R O W AVE POWER TRANSISTORS T - 3 3 - ^ r - 33-07 N-P-N silicon transistors fo r use in space, m ilitary and professional applications.

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> w tis s - 001S030 M GFX38V0005 338 • 1 0 .0 — 10.5G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 8 V 0 0 0 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 10.0 ~ 10.5

a512K

Abstract: KMM532512CV
Contextual Info: SAMSUNG ELECTRONICS INC b7E 1> • 7 ^ 4 1 4 2 001S04b b42 I SMGK KM M532512CV/CVG DRAM MODULES 5 1 2K x 3 2 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tflAC • • • • • • • tcAc tflC KMM532512CV-6 60ns 15ns 110ns

KMM581000BN

Contextual Info: SAMSUNG ELECTRONICS INC b?E » • 7 i b 4 1 4 2 001S0Ö1 747 MSflGK KMM581020BN DRAM MODULES 1Mx8 DRAM SIMM Memory Module, bow Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581020BN is a 1M bitsx8 Dynamic RAM high density memory m odule. The Samsung

viterbi algorithm

Contextual Info: ABRIDGED VERSION AI SSI 34P3500 w m PRML Read Channel with PR4, 8/9 ENDEC, FWR Servo s ifs k tn s A TDK G roup/Company Advance Information December 1995 DESCRIPTION FEATURES The SSI 34P3500 is a high performance BiCMOS read channel 1C that provides all of the functions needed to

CYM1465

Abstract: 648E2
Contextual Info: CYM1465 CYPRESS Features • High-densitv 4-megabit SRAM module • High-speed CMOS SRAMs — Access time o f 70 ns • Low active power — 605 mW max. • 2V data retention (L Version) • JEDEC-compatible pinout • 32-pin, 0.6-inch-wide DIP package • TTL-compatible inputs and outputs

Contextual Info: w g m HEW LETT mLUM PA C K A R D Isolated 15-bit A/D Converter Technical Data HCPL-7860 HCPL-0870, -7870 Features • 12-bit Linearity • 700 ns Conversion Time Pre-Trigger Mode 2 • 5 Conversion Modes for Resolution/Speed Trade-Off; 12-bit Effective Resolution

Contextual Info: International Rectifier • HEXFET P o w e r M O S F E T • • • • • • • DD1SD7t 3SS" INR PD'9439C IRFD9220 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel Fast Switching

Contextual Info: aW V X 7 °U ^ 2 Z 7 h PANEL DISPLAY UNITS 128X64mm <t>3mm 3 2 X 1 6 Dots L N P 173011 • Absolute Maximum Ratings T a = 2 5 °C m m Symbol □ V'> L E D ffl A a * Si f t m ffl S f? jm ■ £ Ratings * -0.3-+6.0 Unit V Supply Voltage for Logic Vcc Supply Voltage for LED

Contextual Info: UNITRODE CORP/UNITRODE IC — M3E D ^ 3 4 0 5 1 ^ 0 0 1 2 D7 2 fl • UNI LLM 338 U N IT R O D E T -5 ? -//-2 3 5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATOR FEATURES DESCRIPTION • • • • • The LLM 338 voltage regulator is a mono­ lithic integrated circuit designed for use in

Contextual Info: N AUER PHILIPS/DISCRETE • ObE D b b S a ^ l OD1SOSS MRB11350Y V T -3 3 -lir P U L S E D M IC R O W A V E P O W E R T R A N S IS T O R N-P-N silicon power transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz,

transistor trio anemometer

Abstract: Horizontal Transistor TT 2246 FPGA programmable switch capacitor PI-165 ATT3000 lsc 3120 ATT3020 ATT3030 grid tie inverter schematic ATT3064
Contextual Info: Data Sheet March 1995 — _—— • y - T • _ = ¡T" 1 , Microelectronics ATT3000 Series Field-Programmable Gate Arrays Features ■ High performance: — Up to 270 MHz toggle rates — 4-input LUT delays < 3 ns ■ User-programmable gate arrays

LN5110OGAMW

Contextual Info: H Numeric Display — T wo C o lo r Lighting 1 Digit 25.4mm 1 . 0 ” Series T y p e No. Unit: mm L igh tin g C o lo r L N 5 1 10 O G A M W • JS-F-iifrc O ra n g e , G re e n Terminal Connection A s tgnment C athode e (Orange,Green) C athode d (Orange,Green)

M5L8085AP

Abstract: M5L8255AP-5 MSL8255AP-5 M5L8085 M5L8255ap M74LS373P M5L8255 M74ls373 5 Pen Pc Technology PPT Circuit UAA2022
Contextual Info: SIE D Mi • taSHTÓEñ t s u b i s h i DQlSGb? fl ■ MITSUBISHI LSIs n ic M P T R /n ip R C M 5 L 8 2 ~ 5 5 A P - 5 5 1 -1 ^ PROGRAMMABLE PERIPHERAL INTERFACE DESCRIPTION The M5L8255AP-5 is a family of general-purpose programm­ able in p u t/ output devices designed for use with an 8-bit/16blt parallel CPU as input/output ports. Device is fabricated

Contextual Info: HARRIS SEfilCOND SECTOR IbE D • 4302571 OQIMTT? I ■ 23 HARRIS 82C87H/883 T - Z X - 2 \ CM OS Octal Inverting Bus Transceiver June 1989 Pinouts 8 2C 8 7 H /88 3 CERAMIC DIP TOP VIEW • T h is C irc u it is P ro c e s s e d in A c c o rd a n c e to M il- S t d - 8 8 3 a n d is Fully

Contextual Info: HARRIS SEMICOND SECTOR IfaE D HARRIS • 4302271 001501b 7 ■ 82C89/883 T f 3 . ■ CMOS Bus Arbiter Juñe 1989 Pinouts Features 8 2 C 8 9 /8 8 3 CERAMIC DIP TOP VIEW. • This Circuit is Processed in Accordance to M il-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.

90C31

Contextual Info: m ^7ifi52fl ooma?a 1 ? 'T - S 2 - 3 S - 4 £ WD90C31A High Performance Video Controller with Windows Accelerator WD90C31A WESTERN DIGITAL CORP 54E ]> • ^710220 001407*} 003 Hlil] TABLE OF CONTENTS T—5 2 - 3 3 - 4 5 Section Title Page , 1.0 INTRODUCTION

mos ic 4532

Abstract: 4532 BD
Contextual Info: S G S-THOMSON D7C D | 7^5^537 OOlSDlfc. T I COS/MOS INTEGRATED CIRCUIT HCC/HCF 4532B *1C 7929225 S G S S E M IC O N D U C T O R 09029 CORP 8-BIT PRIORITY ENCODER • • • • • • • • • C O N V E R T S FROM 1 OF 8 TO B IN A R Y P R O V ID E S C A SC A D IN G F E A T U R E TO H A N D LE A N Y N U M BER O F IN PUTS

Contextual Info: I I N AMER PHILIPS/DISCRETE MAINTENANCE TYPE DbE D bfc.53el31 00150 43 5 • J M06075B200Z T - ^ 3 - IM­ PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended fo r use in military and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications.

Contextual Info: A N AMER PHILIPS/DISCRETE □bE D WM bb53T31 00150b! ? • MRB12350YR MAINTENANCE TYPE for new design use M RB11350Y X ' 33 - I S' PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in

Contextual Info: N AMER PHILIPS/DISCRETE ObE T> • t.b53^31 001SQT3 T ■ P K .B 3 2 U U 1 U PKB32003U PKB32005U M A IN T E N A N C E T Y P E S for new design use PTB32001X, PTB32003X, PTB32005X T - 33 - $ T- 33-0*7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 3 GHz.

Contextual Info: Numeric Display Ititlti 8.5mm . 3 ” Series T yp e N o. Unit: mm L ig h tin g C olo r 14.75 11.9S L N 5 4 3 1 R A M R 5 . R ed I 14.75 10.10 L N 5 4 3 1 R K M R 5 . R ed L N 5 4 3 1 G A M G 5 . G re e n

LNP143021

Contextual Info: ? J 1 a / 7 < X 7 " K H 7 PANEL DISPLAY UNITS h 96X96mm <t>3mm 24X 24 Dots LNP143021 • ÎÊ W Ift^ A Ë fê m A b s o lu te M a x im u m R a tin g s T a = 2 5 °C Item s Symbol Supply Voltage for Logic ¡Ê Ratings Unit Vcc -0 .3 -+ 6 .0 V V le d Max 5.5

nand flash ecc bits

Abstract: arbiter decoder -1996 M-Bits FIFO Field Memory FLASH DRIVE CONTROLLER intel 80c188
Contextual Info: ABRIDGED VERSION / il SSI 36C3950 s é c o n M PCMCIA-ATA/IDE Flash Drive Controller Ìa n s A TDK Group/Company Advance Information February 1996 FEATURES DESCRIPTION The SSI 36C3950 ATA FLASH Controller is a CMOS monolithic integrated circuit housed in a 144-lead