00150B Search Results

Contextual Info: A N AMER PHILIPS/DISCRETE □bE D WM bb53T31 00150b! ? • MRB12350YR MAINTENANCE TYPE for new design use M RB11350Y X ' 33 - I S' PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in

MRB12350YR

Abstract: IEC134 MRB11350Y 67A MARKING
Contextual Info: A N AMER PHILIPS/DISCRETE m bhS3T31 00150bl 7 • OLE D MRB12350YR MAINTENANCE TYPE for new design use MRB11350Y X ' 33 - I S' PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in

a1s smd

Abstract: SMD A1S
Contextual Info: CYM1832 if CYPRESS 64K x 32 Static RAM Module Features F unctional D escription • High-density 2-Mbit SRAM module • High-speed CMOS SRAMs — Access time o f 25 ns • Low active power — 5.4W max. • SMD technology • TTL-compatible inputs and outputs

HE8815VG

Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
Contextual Info: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.

32X16

Abstract: 128X64 LNP773013
Contextual Info: 7 J ^ 7 - j V ^ 7 0K ^ - 7 h FULL COLOR DISPLAY UNITS 1 2 8 X 6 4 mm <t> 3 mm 3 2 X 1 6 D o ts L N P 773013 .mcsrarseíQi«. «'•'o-oo ooroo m o vj.j r-j •~o 5 OOC£ 0 0 0 0 - 3 0 0 0 0 0 3 3 JO „2 9 00 o ooodo ^ 03333! O O C O O c O i O n ^ 0<“ 0 3 O T O n

MN6570EF

Abstract: MN6570F MN6570TF QFP044-P-1010 db3 731
Contextual Info: Panasonic Other MOS LSIs MN6570F, MN6570TF, and MN6570EF Low Power 8-Bit, 3-Channel CMOS D/A Converters for Image Processing • Overview Pin Assignment ■ Features • M aximum conversion rate: M N6570F: 35MSPS min. M N 6570TF and M N6570EF: 40 M SPS (min.)

S51A

Abstract: LT1220
Contextual Info: D IM M , Final Electrical Specifications LTC1409 TECHNOLOGY 12-Bit 800ksps Sampling A/D Converter with Shutdown u i m August 1995 FCRTUIKS D€SCM PTIOn • Complete 800ksps AD C ■ Power Dissipation: 80mW Typ ■ Nap (4m W ) and Sleep (10|iW ) Shutdown Modes

LT1220

Contextual Info: u n m l t c i 4 i ° TECH N O LO G Y 12-Bit, 1.25M sps S a m p lin g A / D C o n v e r te r w ith S h u td o w n F€flTUR€S D C S C M P T IO n • 1.25Msps Sample Rate ■ Power Dissipation: 160mW ■ 71 dB S/ N + D and 82dB THD at Nyquist ■ No Pipeline Delay

D05G

Contextual Info: Data Sheet March 1995 •■ ^ ~ — AT&T Microelectronics ATT3000 Series Field-Programmable Gate Arrays Features ■ High performance: — Up to 270 MHz toggle rates — 4-input LUT delays < 3 ns ■ User-programmable gate arrays ■ Flexible array architecture:

Contextual Info: SSI 78Q8373 ô w m â fs k m 3V, 5V PCMCIA Ethernet Combo s A TDK Group/Company Preliminary Data January 1995 DESCRIPTION FEATURES The SSI 78Q8373 is a highly integrated Ethernet 1C for use in PCMCIA Personal Computer Memory Card International Association applications and can

Contextual Info: HITACHI/COPTOE LEC TRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L 8 3 1 1 E /G GaAIAsLD T - m Description - 0 5 The HL8311E/G are 0.8 jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.

Contextual Info: DS1991 DALLAS DS1991 Touch MultiKey s e m ic o n d u c to r F5 MICROCAN SPECIAL FEATURES • 1,152 -bit secure read/write, nonvolatile memory 5.89 • • Secure memory cannot be deciphered without match­ ing 64-bit password • Memory is partitioned into 3 blocks of 384 bits each

LIZ24

Abstract: L42A
Contextual Info: CYM1832 W f CYPRESS 64K x 32 Static RAM Module Features Functional Description • H igh-d en sity 2-M bit SRAM m odule • H igh-sp eed C M O S SRAM s — A ccess tim e o f 25 ns • Low active power — 5.4 W m ax. T h e C Y M 1 8 3 2 is a h ig h -p e rfo rm an ce