2SD43 Search Results

2SD439

Abstract: 2SB559 transistor af 126 JIS G 3201
Contextual Info: SANYO SEMICONDUCTOR CORP 1EE D I 7 cH 7 G 7 b □ □ □ 3CIÛ2 S T - 3i-n 2SB559 PNP/ npn Epitaxial Planar Silicon Transistors 2009A Low Frequency Power Amp, Medium Speed Switching Applications 2SD439 372E Features . Large allowable collector dissipation and wide ASO.

2SB560

Abstract: 2sd438 transistor 2SD438 2sb560 transistor transistor 2sd438 326H transistor 2sb560 2sd438 2sb560 2SD438 SANYO
Contextual Info: Ordering number: EN 326H 2SB560/2SD438 N 0.326H PNP/NPN Epitaxial Planar Silicon Transistors SANYO i Low-Frequency Power Amp Applications The 2SB560/2SD438 are epitaxial planar transistors for complementary push-pull pair having high reverse voltage and low saturation voltage, and suitable

C312 diode

Abstract: 2SC3238A BLY87A 2SC2983Y BLW80 2SC731 BSS42 2SD1220Y acrian acrian inc
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 40665 2N5215 C2-8Z C3-12 2SC1947 2SC1965 2N5080 BFY99 ~~~~~69 25 30 2SC731 2SC731 BlY53A 2SC1966 BLX93A BLX68 BLX68 BlW80 ~~~~~7 35 40 MH8112 MH8113 2SD439 2SD1681 2SC2690 2SC2690A PT9732 2SC3292

Contextual Info: 2SD438G Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)900m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V)600m @I(C) (A) (Test Condition)500m

2sb560

Abstract: 2Sd438
Contextual Info: Ordering number: EN 326H No.326H _ 2SB560/2SD438 PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency Power Amp Applications The 2SB560/2SD438 are epitaxial planar transistors for complementary push-pull pair having high reverse voltage and low saturation voltage, and suitable

2sd439

Abstract: 2SB559
Contextual Info: 2SB559 E pitaxial P lanar S ilic o n T ra n sisto rs P N P /n p n 2009A 2SD439 P372E Low Frequency Power Am p, Medium Speed Switching Applications Matures . Large allowable collector dissipation and wide ASO. . Low saturation voltage and good linearity of hFE.

2SD437

Contextual Info: SavantIC Semiconductor Product Specification 2SD437 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ·Fast switching speed APPLICATIONS ·For switching regulator and power amplifier applications PINNING see fig.2 PIN DESCRIPTION

2Sb560

Abstract: 2SD438 2sd438 2sb560 2sb560 transistor
Contextual Info: 2SB560 E p ita x ia l P la n a i S ilic o n T ra n sisto rs P N P /n p n 2006A 2SD438 326G Low Frequency Power Amp Applications The 2SB560/2SD438 are epitaxial planar transistors for complementary push-pi pair having high reverse voltage and low saturation voltage, and suital

TD 2013

Abstract: SEM-E 2SD626 2SD733 2SD978 2SD1400 2SD437 2SD437W 2SD439 2SD761
Contextual Info: Type •o 4> 3 e 'S 4> Number Applications «B £ au> « 0» Bi Q£ 2SD437 Switching Regulator, Ignltor 2SD437W High Voltage, Medium Speed Switching Regulator « S 3 o 8 a U 2 3 t> 3 w V f BO V cko t v c„ V ebo K - S.T M E 600 400 6 10 2017 S.T M E 500 350

2SD437

Contextual Info: Inchange Semiconductor Product Specification 2SD437 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3 package ・High voltage ・Fast switching speed APPLICATIONS ・For switching regulator and power amplifier applications PINNING see fig.2 PIN DESCRIPTION

2SD439E

Abstract: 2SC536E 2SC536E,F zkb transformer 2SD439 2SC536EF sirio 2SC536 sanyo 2SC536e b559
Contextual Info: SANYO SEMICONDUCTOR CORP lfiE D I ? cn ? G 7 t . □ □□ M 'i lS T~33- 2SD439 N P N / pnp Epitaxial P lan a r 2 00 9 A S ilic o n T ra n sisto rs Low Frequency Power Amp, Medium Speed Switching Applications 2SB559 372E Features . Large allowable collector dissipation and wide ASO.

2sc1027

Abstract: 2SC875 2SC693 2SC1025 2SC931 2sc929 2SC875 E high power amp 25C1024 2SC933
Contextual Info: 2SC858 •o u 3 e *£ <s> c m o *5 a* FP Small Signal, Low Noise Amp Low Noise Amp 2SC860 UHFOSC 2SC875 Low Noise Amp 2SC875 Switching, L F Amp 2SC876 LF Amp Switching» L F Amp 2SC927 VHF RF Amp with AGC 2SC928 VHF RF Amp with AGC 2SC928 2SD438 2SD438

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sb405

Abstract: 2SD78 2SD67 circuit 2SB405 2SD78A 2SD74 2SB22 2SD88A 2SD82 2Sd92
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc Tj (V) (V) (mA) (mW) (ºC) 2SD11 25 15 300 150 85 2SD12 75 4 2.5A 60W(Tc=25ºC) 150 2SD13 35 4 10A 100W(Tc=25ºC) 150 2SD14 75 4 10A 100W(Tc=25ºC) 150 2SD15 60 6 6A 80W(Tc=25ºC) 150 2SD16 100

2SC1260

Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC1681 2SC2021 2sc2990 2SC1345
Contextual Info: - « m * 2SC 15 2 8 2SC 1529 € tt T y p e No. M Manuf. SANYO H £ = £ S TOSHIBA 2SC2102 B H NEC ¿ HITACHI « ± FUJITSU Ü fò 2SC299Ö 2SC2888 □ T MATSUSHITA MITSUBISHI — 117 A ROHM 2SC2034 2SC1260 * 2SC 1537 □- A 2SC930 * 2SC 15 3 8 □- A 2SC930

2SC2291

Abstract: 2SC1740 R 2SC458LG B 2SC945 2SC1345 2sc458 2SC2412K 2SC458lg 2SC4453 2SC1685
Contextual Info: - S € Type No. 2SC 1619A tt € Manuf. 2SC 1620 2SC 1621 2SC 1622 2 SC 1622A 2SC 2SC 2SC 2SC 2SC 1623 1624 1625 1626 1627 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1627A 1628 1629 ^ 1630 1631 1632 1633 1634 1635 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 1636 ^ 1637 ^ 1638

2SB528

Abstract: 2SB540 2SB511 2Sd358 2SB525 2SB526 2SB527 2SB530 2SD287 2SB539
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) 2SB502 -110 -8 -3A 2SB502A -110 -10 -3A 2SB503 -70 -8 -3A 2SB503A -80 -10 -3A 2SB504 2SB504A -80 -100 -10 -2A -10 -2A 2SB505 -80 -10 -2A 2SB506 -150 -7 -5A 2SB506A -150 -7 -5A

2SC3258

Abstract: 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SC4211 2SD667
Contextual Info: - £ Type No. 2SC 3927 £ Manuf. ^ H B ft SANYO TOSHIBA -yy'ry 2SC3Q90 2SC4157 2SC 3928 = Ü 2SC2812 2SC2712 2SC 3929 / 2SC4211 2SC4116 2SC4211 2SC4211 2SC 3931 fé T fé T fé T fé T 2SC 3932 fé 2SC 3933 2SC4853 2SC 3935 fé T fé T fé T 2SC 3936 fé T

2N4241

Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

2n3604 transistor

Abstract: 2N1103 NKT102 2N123 2SC175 2SC176 2SC177 2SC73 2SC75 CK26A
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TEC H NICA L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol % ' (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SC1957

Abstract: 2SC2407A 2SC2407 2SC2314 toshiba 2SC1763 2SC2040 2SC2033 2SC2021 2SC-2021 K 2056
Contextual Info: - m € Type No. 2SC 2014 2SC 2017 2SC 2018 2SC 2020 2SC 2024 ^ ï¥ SANYO 2SC2274 □— A * . 2SC 2044 2SC 2051 2SC 2053 2055 2056 2057 ^ 2058 /' 2059 S 2060_ 36 2 TOSHIBA 2SD1090 m □ — A □— A 2SC 2061 2SC 2062 ' 2SC 2063 ^ □— A □— A □— A

2SA1047

Abstract: 2SD438 STK10501 STK1050A 2SA659 DBA40C STK1050 2SC 1570 2sd438 EQUIVALENT MG-200
Contextual Info: No.965 n Thick Film Hybrid Integrated Circuit 50W min AF Power Amp. Output Stage D . P . P . W ith B u i l t - i n E m itte r R e s is ta n c e % SANYO S T K 1 0 5 0 Features 1. Built-in emitter resistance 2. Allowable power rating of resistor is 5W min. which is capable of meeting