2SC73 Search Results

2SC732

Abstract: transistor 2sC732 NPN 2sc732
Contextual Info: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

toshiba 2SC732

Abstract: 2SC732TM
Contextual Info: 2SC732TM TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC732TM LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm High Breakdomn Voltage : VCEO = 50V Excellent hFE Linearity : hFE (IC = 0.1mA)/hFE (IC = 2mA) = 0.95 (Typ.) Low Noise : NF (1) = 0.5dB (Typ.) (f = 100Hz)

2SC734

Abstract: 2SA561 2SA5610 2SC734 Y transistor 2SC734 transistor 2SA561 2SA561-Y 2SC734 R
Contextual Info: v 'j3> P N P x f$+ -> r P C m 2SA561 SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) 0 D riv er S tag e A m p lifie r A p p lic atio n s • ¡ S i t E - e - f ; V ceo = —5 0 V (M in .) • ISfQ'SEE^'iS''' : VCE(sat) = —0.3V(M ax.) • 2SC734 i 3 y /. v 9 V K tz 'O

2SC732TM

Contextual Info: TOSHIBA TRANSISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL 2SC732TM DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC732TM) LOW NOISE AUDIO AMPLIFIER APPLICATIONS • • • Unit in mm High Breakdomn Voltage : V£EO = 50V Excellent hpg Linearity : hpE (IC = 0-l rn^L) 1hpE dC = 2mA) = 0.95 (Typ.)

2SC732TM

Abstract: M5030 S12R
Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR T O S H IB A TECHNICAL 2SC732TM DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC732TM) Unit in mm LOW NOISE A U D IO AM PLIFIER APPLICATIO NS • • • High Breakdomn Voltage : V q e O = 50V Excellent hpg Linearity : hFE (Ic = 0.1mA) / hFE (Iq = 2mA) = 0.95 (Typ.)

transistor 2sC732

Abstract: 2SC732
Contextual Info: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC730

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm

diode bsy28

Abstract: BF152 CS9018 BF158 2SC738 2N3984 bsy28 diode SC2644 PN3563 BSY28
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BSY17 BSY18 BSY18 EN744 2N3985 BF153 BSX90 BSX90 BSX90 2N4421 2N4421 BSX91 BSX91 BSX91 2N4265 2S131 2S131 2S131 2SC739 C111E ~~~~9 25 30 - 35 -40 45 - 50 55 60 65 70 75 80 -85 90 95 BSY28

C312 diode

Abstract: 2SC3238A BLY87A 2SC2983Y BLW80 2SC731 BSS42 2SD1220Y acrian acrian inc
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 40665 2N5215 C2-8Z C3-12 2SC1947 2SC1965 2N5080 BFY99 ~~~~~69 25 30 2SC731 2SC731 BlY53A 2SC1966 BLX93A BLX68 BLX68 BlW80 ~~~~~7 35 40 MH8112 MH8113 2SD439 2SD1681 2SC2690 2SC2690A PT9732 2SC3292

2SC730

Abstract: TRANSISTOR 1P f150m RF NPN POWER TRANSISTOR l band
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on VHF band mobile Dimensions in mm radio applications.

BF394 MOTOROLA

Abstract: 2SC733 LOW-POWER SILICON NPN 2N542 S8GD BF215 BF226 BFW29 2SC733/G
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 2N3845 2N3845A 2N3855A 2S0654 TEC80130 TEC80130 2SC828 BF394 BF3950 2N1278 ~~~~~9 15 20 BF238 BF215 BF215 BF226 BF226 NR4210S NR421FS 2SC733 ~~g~~~ 25 30 BFW29 BFW29 BFW29 2SC367G 2SC504 2SC504 2SC504 2SC509G

2SC735

Abstract: 2sC735 transistor 2SA562 2SA56 2SC735 0 2SA562 TOSHIBA TOSHIBA 2SC735 a-45J CMA120 Produced by Perfect Crystal Device Technology
Contextual Info: ^vnypNPxeyz^uBh^yvzviPCTm 2 s a 562 O o PNP 2SC 735 t ; V c E e a t) = - 0 .2 5 V (M ax .) => y y p / V 9 y Ki t 0 i t o Complementary to 2SC735 Mt'k'SL'fe MAXIMUM RATINGS CHARACTERISTIC X.IV9 (xa = 25 °C) SYMBOL HATING UNIT VCBO - 30 V * i i y 9 IH flS

2SC1216

Abstract: sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2SC2320L 2sc1162
Contextual Info: - 11 2 - ñ £ tt Type No. * 2SC 1343 H B 2SC 1344 B 2SC 1345 B 2SC 1345K « Manuf. a & h TOSHIBA 2SC1570 2SC732TM 2SC1842 2SC1570 2SC732TM 2SC1843 2SC2001 ÍI ÍL ÎL íL m b SANYO NEC 2SD734 2SC3419 * 2SC 1347 fé T 2SC2274 2SC3419 * 2SC 1354 fé T * 2 SC 1358

2SA561

Abstract: 2SC734 2SA 561 transistor transistor 2SC734 transistor 2SA561 2SC734 Y JSW 70 Produced by Perfect Crystal Device Technology TRANSISTOR y9
Contextual Info: 2s a 561 ^ u j y p N P x ^ 5> ^ p m ^ y ^ x s > p c T m SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS o O D riv e r S ta g e A m p lif ie r A p p lic a tio n s •  W - Ë E - r - t ; V c b o = - 50V • « IÎD * Œ x > 5 ^ ; Vc k ( e a t ) = 2SC734 t

2SC732

Abstract: transistor 2sC732 NPN 2sc732 2SC732 Transistor 2SC732 equivalent 2SC732 s
Contextual Info: ST 2SC732 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC733

Abstract: transistor 2sc733 GR 733 2sc735 2SC733 GR 2SC733-Y transistor bf 458 2SC733BL TRANSISTOR 2SC 458 TRANSISTOR 2SC 733
Contextual Info: ì / ' J D > N P N I ^ ^ r 5/? J W B h 5 > SILICON o NPN EPITAXIAL ^ TRANSISTOR 2s c 733 9 P C T £ Ä (P C T PROCES^ Audio Ampli f i e r Applications Unit in m m 05.8MAX. • 2SC735 • BJ&P-F 04.95MAX. i“o R e c o m m e n d ed for Driver Stage in Claes

2sc2538

Abstract: hpa b 110 2SC2S39 2SC5125 2sc4624 2SC2094
Contextual Info: 150MHz B and 13.5V S eries fo r M obile Radios <Tc = 25*C> Max. ratings Application 2SC20S3 HPA S ,NPN,EP VM ° 40 2SC1970 HPA S ,NPN,EP 40 2SC730 3K* V Structure •' - 0.3 4 0.6 & Rttv-c 5 + 150 25 fc /w 0.61 + 135 183 w 4 Pç W) Ve (min) {%) {«ax) i* A )

BC184BP

Abstract: na31xj 2SC733GR 2sc733y 2SC733-GR 2sc21200 BC650C 2SC509GT BC650CS *d471a
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 25 30 BC849B PTC121 BC223B 2SC21200 2SC28840 2SC27030 2SC27030 2SC22360 BC184K BC184KB ED1402C TED1702N BC183KA MPS9633 MPS9634 2SC941Y KSC1393 ~~g~~~4 35 40 2SC380TM-Y KSC1675 2SC394GR 2SC733Y ZTX109 2SC941TM-Y

p20n60

Abstract: CK420 2SC733bl 2N1077 2SC482 2SC337 2S01781K BCY581X LOW-POWER SILICON NPN BSY75
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 BC183CP BCl84CP BC184C BC184LC BC183KB BC183B BC184B 2N4385 2N4386 BC269 2N1948 2SC733BL PTC139 BC183K BC183KC BC183 BC183C BCl84 ZTX384 2N5963 2N5963 2N5963 PMBT5088 2N718A UPI718A 2SC482

2SC733

Abstract: ic741 006P Ic-741 C733 SC733
Contextual Info: H 6 2SC733 @ 7 nn m ^ M fê Se 006P Ì& 2 2 |B| ^ t 7 / X >f 7 -f- P /J'S D 6 i~ Jls ? — $ 1 y 3 > V> M 5^2 M2 m s (6 —ocDSÍffi (006P) li, 7 « ck 9 ì:, rf')*& & , tW '-U A T -IS 1 C7)I*]H i;, n 7 )i 5 -^ A f M è ïif 4 . 1 * m > i o i t t t f f c & r o - p i a S ' t ' S o

transitron

Abstract: rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216

2SC730

Abstract: transistor 2SC730 transistor CD 910 1p TRANSISTOR u3020
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC730 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC730 is a silicon NPN epitaxial planar type transistor designed for industrual use RF power amplifiers on V H F band mobile radio applications. Dim ensions in mm

2SC732TM

Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR TO SH IB A TECHNICAL 2SC732TM SILICON NPN EPITAXIAL TYPE PCT PROCESS DATA (2SC732TM) Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS • High Breakdomn Voltage : • Excellent hEE Linearity V q E o = 50V . 5.1 M AX. : hFE (Ie = 0.1mA) / hFE (Ie = 2mA) = 0.95 (Typ.)

Contextual Info: TOSHIBA TRANSISTOR SEM ICONDUCTOR T O SH IB A TECHNICAL 2SC732TM DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC732TM) Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS • High Breakdomn Voltage : V q e O ~ 50V • Excellent hpE Linearity : hFE dC = 0.1mA) / hFE (Iq = 2mA) = 0.95 (Typ.)