2SA56 Search Results

2sa1015

Abstract: 2SA673 2SA935 2sa733 2SA562 564a 2SA572 2SA933 2SA953 2SA930
Contextual Info: - 8 - m % Type No. 2SA 549A 2SA 550 ^ 2SA 550A 2SA 551 2SA 552 2SA 553 2SA 554 2SA 555 2SA 556 2SA 557 2SA 558 2SA 559 2SA 559A 2SA 560#^ 2SA 561 ^ 2SA 562 % Manuf. B ÍL fâ fâ H B T T £ C î¥ 36 2Ê TOSHIBA 2SA984 2SA562 2SA1015 B a NEC B Al HITACHI 2SA778AK

2SA562

Contextual Info: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC734

Abstract: 2SA561 2SA5610 2SC734 Y transistor 2SC734 transistor 2SA561 2SA561-Y 2SC734 R
Contextual Info: v 'j3> P N P x f$+ -> r P C m 2SA561 SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) 0 D riv er S tag e A m p lifie r A p p lic atio n s • ¡ S i t E - e - f ; V ceo = —5 0 V (M in .) • ISfQ'SEE^'iS''' : VCE(sat) = —0.3V(M ax.) • 2SC734 i 3 y /. v 9 V K tz 'O

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SA562 TRANSISTOR PNP 1. EMITTER FEATURES Excellent hFE Linearlity 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA562 TRANSISTOR（ PNP ） TO—92 FEATURE Power dissipation PCM : 0.5 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V BR CBO: -35 V Operating and storage junction temperature range

2SA562

Abstract: transistor 2SA562
Contextual Info: VI cc TO-92 P lastic-E n capsu iate T ran sisto rs 2SA562 TRANSISTOR NPN FE ATURES P cm : 0.5W (Tamb=25°C) Icm : -0.5 A É ü li lÉ É y ftMie voltage V(8R)CBO: -35 V storage junction temperature range Tj.Tsig: -55°C to + 150“C ELECTRICAL CHARACTERISTICS

2sa564

Abstract: 2SA564A 2SA564A S 2SA564A R 2SC828 P 2SC828 2SA564 R 2SC828A 2SA564A Q 2SA564 Q
Contextual Info: 2SA564, 2SA564A 2SA564, 2SA564A PNP + U 7'V “—-j-g y /S i P N P E pitaxial Planar —SSliilffl/G eneral Use for Small Signal 2SC828, 2SC828A /Complementary pair with 2SC828, 2SC828A Unit : mm 5. lmax. 4. lmax. ¡ft & /F e atu re s • i l i t h FE /J>A *?l'o/H igh hFE

2SA562

Contextual Info: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2SA562 2Plastic-Encapsulate Transistors PNP TO-92 Features Power dissipation PCM : 0.5 W Tamb=25℃ Collector current ICM : -0.5 A Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ : 150℃

2SA562TM

Abstract: 2SC1959
Contextual Info: TOSHIBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS • Excellent hjpg Linearity. hpE (2) = 25 (Min.) at VqE = —6V, Iq = —400mA

2SA708 NEC

Abstract: MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 D29E9 D29E9 TP5821 BCW93A BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L BC361-10 BC432 BC1Sl-l0 BC303-5 BC303-5 BC303-5 2N2591 BCW97A 2N4032 2NS223 ~~~~ 25 30 35 40 BFT70 BFT80 BFT80 2N4028 MPS751 2N2S03

2SA561

Abstract: transistor 2SA561 023R
Contextual Info: 2SA561 PNF SILICON TRANSISTOR TO-92B 2SA561 is PNP silicon, planar transistor designed for low power general purpose amplifiers. ABSOLUTE MAXIMUM R A T INGS ECB Collector-Base Voltage Ccliector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

Contextual Info: 2SA565K Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V) I(C) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2SA562

Abstract: 2sa562 equivalent transistor 2SA562
Contextual Info: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC1000

Abstract: 2SC828 P 2SC735 2SC1330 2SC923 c1213a 2SC537 2SC373 2SA640 2SA673A
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. MAXIMUM RATINGS POLA­ RITY CASE 2SA561 2SA564 2SA564A 2SA640 2SA641 P P P P P 2SA666 2SA666A 2SA673A 2SA721 2SA722 H FF- VcE sal fT min max le (mA) (MHz) (MHz) C 0b N.F. max le (mA) VCE (V) max 400 tt 700 tt

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA562-O 2SA562-Y Features x x x x Excellent h FE Linearlity Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

Contextual Info: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA562TM

Abstract: 2SC1959 Audio Power Amplifier TOSHIBA
Contextual Info: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA

2SA562TM

Abstract: 2SC1959
Contextual Info: TO SH IBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS . 5.1 MAX. SWITCHING APPLICATIONS .n. Excellent hEE linearity. UJ?'E (2) ”

2sa562y

Abstract: 2SA562-Y
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA562-O 2SA562-Y Features x x x x Excellent h FE Linearlity Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1

2SA562TM

Contextual Info: TOSHIBA 2SA562TM 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY LO W PO W ER AM PLIFIER APPLICATIONS DRIVER STAGE AM PLIFIER APPLICATIONS 5.1 M AX. SWITCHING APPLICATIONS • Excellent hpE Linearity. hFE (2) = 25 (Min.) at V cE = —6V, I c = -400m A

Contextual Info: TO SHIBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS . 5.1 M AX. SWITCHING APPLICATIONS • Excellent hpE Linearity. hpE (2) - 2 5 (Min.) at V q E = -6 V , I q = —400mA

2SA562 equivalent

Abstract: 2SA562
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA562 TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM : 0.5 1. EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current A ICM : -0.5 Collector-base voltage V (BR) CBO: -35 V

180M 290

Abstract: BC157B BCY79CP 6p6p BCY79BP LOW-POWER SILICON PNP BCB07-40 bcb07 BC327BP MMBA811CB
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 BC307B5 JE9015C JE9015C TMPT813S4 BCY79 BCY79P BCY79VII BCW70 BCF70 BCF70 ~g~jgR 15 20 BCF70R BCB57B BC177P BC177PK BC307P BC307PK BC307PL BC560B ~~~7AR 25 30 1T130A KSA539 KSA707 2SA564A BCB60AR BCB60AR BCB60AR