2SA641 Search Results

2SC1000

Abstract: 2SC828 P 2SC735 2SC1330 2SC923 c1213a 2SC537 2SC373 2SA640 2SA673A
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. MAXIMUM RATINGS POLA­ RITY CASE 2SA561 2SA564 2SA564A 2SA640 2SA641 P P P P P 2SA666 2SA666A 2SA673A 2SA721 2SA722 H FF- VcE sal fT min max le (mA) (MHz) (MHz) C 0b N.F. max le (mA) VCE (V) max 400 tt 700 tt

Contextual Info: Tab l e Item 4 à 2 A LTR. D A T E BY REV. D E S C R I PT DATE SCALE O C T .0 2 .2 0 01 2/1 No. UN I T mm I N C H N u m b e r Materials of Alignment Sleeves LGC-2SA641 Z i rc o n i a LG C -2SA641P P h o s p h o r b ro n z e Co lor:Wh i te Cap PBT R esin

2SC644

Abstract: 2SC1222 2sC537 2SC1000 2SC1328 2SC828 P 2SC1327 2SA889 2SC923 2SA1015
Contextual Info: Low Level and General Purpose Amplifiers TY PE PO LA ­ NO. RITY CASE M A XIM UM RATINGS Pd IC VCEO mW (mA) (V) H FE min VCE(sat) max fT Cob N.F. ic VCE max IC max max (mA) (V) (V) (mA) (M Hz) (MHz) (dB) m in 2SA641 2SA666 2SA666A 2SA673A 2SA721 P P P P

2SC923

Abstract: transistor 2sc923 2SA641 2SC923 E F 251C 300TYP PA33
Contextual Info: 2SA641 2SA641 PNP U rj > h a V J & / PNP S IL IC O N E P IT A X IA L T R A N S IS T O R A lu m in a P assivation) 9<tWm/PACKAGE Frequency High Gain A m p lifie r & DIMENSIONS (Unit:mm) ^/FEATURES iif e :3 o o ty p . a c = -o .5 m A ) • 2SC923 t y ? ') j> y ? ') T ' & j L Z o

2SC644

Abstract: 2SC1000 2SA1715 2SC1222 2SC1330 2SC923 2SC828 2SC1815 2SA641 2SC372
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA­ RITY CASE 2SA641 2SA666 2SA666A 2SA673A 2SA721 P P P P P TO-92B TO-92B TO-92B TO-92B TO-92B 250 250 250 400 150 50 50 50 500 50 45 25 45 50 35 100 130 130 60 180 700 700 700 320 1040 2SA722 2SA876H 2SA888

2Sc945 equivalent

Abstract: 2SA733 equivalent 2SA733B 2sc1623 equivalent 2SC2002 equivalent 2SC1216 2SA603 2SK104 2SC923 2sc2001 equivalent
Contextual Info: 10. Specifications of MINI M O L D Device Typ« Number Regular /Reversal 2SA811 2SA812/2SA812R PNP Tran­ sistor NPN Tranlilto r Nearest Equivalent* ' M M BA811.M M BA812 | BCW29.SCW 30,BCW 69,8CW 70,MMBTA70 TO-92 Packaged Equivalent Page 2SA641 21 2SA733.BC556.BC5571BC558,BC559,BC560

bc 558 equivalent

Abstract: pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA467 HN / BC 327 / 8550 2SA578 HN / BC 560 / 9015 2SA721 HN / BC 559 / 9015 2SA494 HN / BC 559 / 9015

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA564A-P

Abstract: 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2N5138 2SA1715 2SC372
Contextual Info: TYPE NO. H M A X IM U M R A TIN G S CASE Pd mW 'c Im A) V CEO (V) min FE V CE(SAT) max •c lm A | V CE (V) max (V) 'c Im A I fT min (MHz) Cob N.F. max max (pF) (dB) _ 2N5138 2N 5172 2N5209 2N5210 2N5219 P IM N N N TO -IO 6 TO-92B T O -92A TO-92A TO -92A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SA640 M

Abstract: 2sa550 2N5828 2Sa640 L 2SA889
Contextual Info: Low Level and General Purpose Amplifiers M A X IM U M R A T IN G S TY PE PO LA­ NO. R IT Y CASE H , PE P« m W Ic (m A ) V ceo (V) m in m ax Ic (m A ) VCE (V) V cE ftrt m ax Ic (V) (m A ) C* m ax N .F . (M H z ) (M H z ) (d B ) . _ _ - . _ . . - - - -

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

2SA616

Abstract: 2sa620 2SC1014 2SC1079 2SA688 2SC634A 2SA678 2SC1013 2SC1008A 2SA628A
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) PartNumber VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob ºñ°í (V) (V) (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) 2SA603 -60 -8 -200 300 150 140 -1 -10 250* 7.5 2SC943 2SA604

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

2sa641

Contextual Info: NEC PNP SILICON TRANSISTOR ELECTRON DEVICE 2S A 641 DESCRIPTION Th e 2S A 641 is designed fo r use in A F am p lifier and high-gain PACKAGE DIMENSIONS am plifier. in millimeters inches 5.2 MAX (0 .2 04 M AX.) FEATURES • High h FE hpE O c = - 0 . 5 m A , V CE = - 3 . 0 V )

2SC946

Abstract: 2SC968 2SC911 2SC901 2SC935 2SC917 2SC901A 2SC919 2SC931 2SC914
Contextual Info: Page 1 of 3 Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 50W 2SC901 200 6 5A 150 25 4 5A 50* (Tc=70ºC)

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK