2SC176 Search Results

2sc1764

Contextual Info: 2SC1764 SILICON NPN EPITAXIAL PLANAR TYPE 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm FEATURES : . Specified 28V, 28MHz Characteristics : Output Power : Po=80Wpjjp : Minimum Gain : Gpe=14.5dB : Efficiency : ’i'c=40%(Min.)

2SA899

Abstract: 2SC1903 2SC1792 2sc1855 2-13B1A 2SC1815L 2SA1015L 2SC1840 2SA991 2sc1846
Contextual Info: - no Ta=25‘ C, *EfJíáTc=25‘ C} •WTX -a m -Çt -Él iè m VCBO Vc e o IC(DC Pc Pc* (V) (V) (A) (W) (W) IcBO (max) (a a ) VcB (V) ñ (min) hFE ft & (max) fé Vc e (V) (13=25^) ïc/ OHHàtypfc] (max) (V) I e (A) (V) le (A) Ib (A) 2SC1763 30MHz PA 65

2SC1766GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SC1766GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.)

Contextual Info: 2SC1762-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)450ö V(BR)CBO (V)850 I(C) Max. (A)150m Absolute Max. Power Diss. (W)8.0 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)2.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2sc1763

Abstract: toshiba 2SC1763
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1763 2 ~ 3 0 M H z SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE Unit in mm FEATURES: . Specified 28V, 28MHz Characteristics : Output Power : Po^AOWpgp : M i n i m u m Gain ; Gpe= 1 6 d B : Efficiency

Contextual Info: 2SC1765 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)35 I(C) Max. (A)800m Absolute Max. Power Diss. (W)7.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 2SC1763 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)65 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)3.0mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC1765

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1765 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. 9.39 MAX 0a5MAX FEATURES : . Output Power : Po=2.8W Min. (f=470MHz, VCC=12.6V, Pi=0.6W) 00.45 . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR

2SC1763

Abstract: toshiba 2SC1763 D1S1555 12ID 1S1555 20ID 813b1
Contextual Info: TOSHIBA {DISCRETE/OPT03- Tb DE | ciDci7BS0 0007MSÖ E y 9097250 T O SH IB A 5 óC D ISC R E T E /O P T O o 07458 2SC1763 SILICON NPN EPI TAXIAL PLANAR TYPE Unit in mm 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (28V SUPPLY VOLTAGE USE) FEATURES :

2SC1766

Abstract: transistor marking HB sot-89 MARKING HB SOT-89 P1766
Contextual Info: WILLAS FM120-M+ 2SC1766 THRU FM1200-M SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features TRANSISTOR NPN • Batch process design, excellent power dissipation offers

FR4 substrate

Abstract: Y1766 2sc1766
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SC1766PT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.)

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SC1681

Abstract: 2sc1971 2SC2990 2SC1165 2SC1843 2SC1763 2SC1764 2SC2363 2SD1486 2SC1740LN
Contextual Info: - 118m % T y p e No. * 2SC 1571 * 2SC 1571L tt « Manuf. = ì¥ SANYO 2SC1570 = n 2SC1570 2SC 1573 & T 2SC4218 2SC 1573A & T 2SC4218 * 2SC 1572 * 2SC 15 74 * 2SC 1577 * 2SC 1578 M 2 TOSHIBA 2SC 1681 m b NEC 2SC 1843 B 3L HITACHI 2SC 1775 m ± ii FUJITSU □

2SC1766C

Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133

2SC1957

Abstract: 2SC2407A 2SC2407 2SC2314 toshiba 2SC1763 2SC2040 2SC2033 2SC2021 2SC-2021 K 2056
Contextual Info: - m € Type No. 2SC 2014 2SC 2017 2SC 2018 2SC 2020 2SC 2024 ^ ï¥ SANYO 2SC2274 □— A * . 2SC 2044 2SC 2051 2SC 2053 2055 2056 2057 ^ 2058 /' 2059 S 2060_ 36 2 TOSHIBA 2SD1090 m □ — A □— A 2SC 2061 2SC 2062 ' 2SC 2063 ^ □— A □— A □— A

2SB553Y

Abstract: IDB1019 RCA1C11 BU606D SD1430 2N5849 idb553
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type •c Max A V(BR)CEO on fT *ON r hFE 'CBO Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) PD (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

B0719

Abstract: BU4080 G80120 2N5849 2SC3254Q 2S0635 2N6455 2S0119 2SC793 BU6070
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 2SC2654K 2SC2654J 2N5490 2N5491 2N5494 2N5495 2So124AH RCA1C05 40875 2SC521A 2S01061 2S01063 2S01363 2S01412 1001412 ID0553 2So1905 2S05530 60 65 70 75 80 90 95 926 l.inmson~eml 2So125AH

B0139

Abstract: B0135 B0137 B0139-16 B0139-6 KT815B B0137-16 B0829 B01-35 B0139-10
Contextual Info: POWER SILICON NPN Ic Item Number Part Number I C 5 10 15 20 25 30 35 -40 45 50 60 - 65 70 75 80 85 90 95 Max Y(BR)CEO (A) (V) fT hFE Min Max (Hz) ICBO t, Max tf Max Po Max TOper Max (A) (s) (s) (W) (Oe) 4.4 4.4 4.4 11 11 7.0 1.2 10 20 10 7.0 14 8.0 8.0 8.0

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

c5287

Abstract: c4381 c3852a c4138 D2494 c4131 transistor c3835 C4020 TO220 transistor c3856 npn c3852
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in