2SD 388 A
Abstract: 2Sd427 2SD313 2SC2320 2SD650 2SC2073 2SD867 2SC2204 2sd1138 2SD2061
Contextual Info: - m £ Type No. tt s Manuf. M 2SÜ1135 2SD1266A 2SC4007 2SD1135 2SD1266 2SÜ2023 2SD1135 2SDÎ266A 2SC4007 2SD526 2SD313 2SD880 2S0 366A fé T 2SD313 2SD526 2SD 367 fé T / H n ✓ M M z. 2SD 371 2SD1884 2SD820 2SD380 2SD867 2SD319 2SD427 2SD716 2SD 373 -
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2sd365a2sd3662sd366a2sd367+162sd3682sd3692sd3702sd3712sd3722sd3732sd 388 a2sd4272sd3132sc23202sd6502sc20732sd8672sc22042sd11382sd2061
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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C3182N
Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn
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2sa512sa572sc32812sd1571+10c3182nc3888a2sd 34202sc22682sc2073-2ep 14083884a3182n2sd 388a2sa855
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2sc46092sc48082sa18062sc4627+162sa17902sc46262sc46552sd23452sc4612sa1d1276ab1419d638 transistorb1361ic 1271ad1273d1985ab947ab11781985a
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3182N
Abstract: 2sd4242 b1375 A1015 2482S 2sc 1091 1S1658 1S2452 2Sc2074 C1172B
Contextual Info: • TO BE DISCONTINUED T Y P E L IS T 1 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e N o. 0 4 A Z 2 .0 —3.6 0 2 C Z 2 .0 -3 .6 2SC 512 2SC 3421 2SC 2754 - 0 5 A Z 2 .2 - 3 .6
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2sc387a2sc18152sc2347t2456+162460b2sc24612461b2sc24812sc25312sc32813182n2sd4242b1375a10152482s2sc 10911s16581s24522sc2074c1172b
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Q451
Abstract: 143ES 144ESA 2SB1616 2SD2478 96-229-D 124ES 114ES 2sD 313 2SD 388 A
Contextual Info: Transistors LOW VcE sat Trsnsistoffstrobe flash) 2SD2098/2SD2118/2SD2097/2SD2166 •F e a tu re s 1) Low VcE(sat). V cE M = 0 .2 5 V (Typ.) (Ic / I b 2) •E x t e r n a l dim ensions (Units: mm) 2SD2098 18±0.1 r—-I = 4 A /0 .1 A ) r~fi Excellent D C current gain charac
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2sd2098/2sd2118/2sd2097/2sd21662sd2098sc-622sd2118+16sc-63ta114esa114esa100mata124esa124esaq451143es144esa2sb16162sd247896-229-d124es114es2sd 3132sd 388 a
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PNP 2SD
Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
Contextual Info: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK AGE 2N 3054 2N 3055
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2n30542n30552n3055sd2n3439+92n34402n37132n37142n37152n37162n3740pnp 2sdt1p61bd224
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complement 2sd882
Abstract: 2SB772 2sd882 2SD882S
Contextual Info: id 2SD882/2SD882S N PN E pitaxial Silicon Transistor Semiconductor A U D IO F R E Q U E N C Y P O W E R A M P L IF IE R LOW S P E E D S W IT C H IN G • C om plém ent to 2SB772 ABSOLUTE MAXIMUM RATINGS tT a = 25 T > C h a r a c te r is tic C ollector-Base Voltage
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2sd882/2sd882s2sb77237im6e371t4fle+3complement 2sd8822sd8822sd882s
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2sd2006
Abstract: TRANSISTOR "BC 371" TRANSISTOR BC 373 transistor 2SD2006 2SB1330 transistor BC SERIES Q 371 Transistor
Contextual Info: 2SD2006 Transistor, NPN Features Dimensions Units : mm • available in MRT package • high breakdown voltage: BVq ^ q = 80 V 2SD2006 (MRT) 6 5±0 2 • large current capacity, lc = 700 mA • complementary pair with 2SB1330 1.0 Applications • R medium power amplifier
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2sd20062sb1330transistor "bc 371transistor bc 373+3transistor 2sd2006transistor bc seriesq 371 transistor
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d2396
Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .
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2sk2503rk7002tc363tsdtc314ts+14tc114g100mata124gdtc144gd2396transistor pnp b1443d2396 equivalentb1569atransistors pnp 50 v 1 a b1443b1186atransistor c5147b1344transistor equivalent b1443k2460
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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n12861n13801mn1381n13811+15n13821n15040215p0802n150412mn15151mn152121transistor a2160transistor a1270a1270 transistortransistor 2sd 45151431t transistortransistor a769mini circuits 15542a1270 yan 5606k
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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1020gn12861n12b62mn1381+16mn13811mn1382115p080215p540258851a70803a3866stransistor a999bs 7818 -1995transistor tt 2206a999 transistortt 2206 transistora1535a8340uastransistor 3866s2sd 4515
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2sd 5023
Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1
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-26unf-2ao-48d2sd 5023transistor bc 945+82sc 9012bc 9013transistor bc 8559416atransistor bc345bfy41bcx 388bc 945
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2sd 5023
Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1
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13llsdto-392sd 5023bc 9013+8bc 9013 g2sc 90122218acs9012bc526transistor bc 945bc287transistor bc345
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2N5017
Abstract: 2SD2350 CP405 1711-1602 2SD234r 2SD235Y BD116 bo113 description BD145 T062
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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npn110buy56-4buy56-6buy56-10+13buy72-4buy72-6buy72-102n50172sd2350cp4051711-16022sd234r2sd235ybd116bo113description bd145t062
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NKT 275 transistor
Abstract: 2sc5250 transistor 2N5577 2N5579 MD38 S2000 2SD223 1401-0405
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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npn110buy56-4buy56-6buy56-10+11buy72-4buy72-6buy72-10nkt 275 transistor2sc5250 transistor2n55772n5579md38s20002sd2231401-0405
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52
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2sd371
Abstract: 2SD 371 2Sb531 transistor 2sd 371 2SD371-Y 251C 2SB53 AC73 je 371 Transistor
Contextual Info: s /U -j SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR mumnm U n i t i n mm Power A m p lif ie r A p p l i c a t i o n s • : Pc = SOW : v CE0 = loov 2SB531 3 0 W H i- F i *-■?* -f * T ; / • ßfel-OMAX. r +ao9 0 LO-CXO3 I 00 fA i OTT M m & T -t* • 11 MAX
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2sb531100tc_2sd3712sd 371+6transistor 2sd 3712sd371-y251c2sb53ac73je 371 transistor
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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D2285
Abstract: 2SB15 2SB1511 2SD2285 EN3716
Contextual Info: Ordering number: EN3716 2SB1511/2SD2285 PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications •Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage : VcE sat = —0.5V(PNP), 0.4V(NPN) max.
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en37162sb1511/2sd22852sb1511d2285+22sb152sd2285
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2SB1507
Abstract: SB15 SR1507
Contextual Info: [^ O rd e rin g n u m b e r : EN 3 7 1 3 2SB1507/2SD2280 P N P /N P N Epitaxial Planar Silicon Transistors H igh-C urrent Sw itching Applications A p p lic a tio n s • Relay drivers, high-speed inverters, converters. F e a tu r e s • Low collector-to-em itter saturation voltage : VcE sa t = ( —)0.4Vmax.
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2sb1507/2sd22802sb1507sb15sr1507 |
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