2SC98 Search Results

2SC982TM

Contextual Info: 2SC982TM 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (ダーリントン接続) 2SC982TM ○ プリンタードライブ, コアドライブ, LED ドライブ用 ○ 低周波増幅用 • 単位: mm 直流電流増幅率が高い。: hFE (1) = 5000 (最小) (IC = 10 mA)

2n261 rca

Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

2SC982TM

Contextual Info: 2SC982TM TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Darlington) 2SC982TM Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications Unit: mm High DC current gain: hFE (1) = 5000 (min) (IC = 10 mA) : hFE (2) = 10000 (min) (IC = 100 mA)

2SC982TM

Contextual Info: TO SH IBA 2SC982TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2SC982TM Unit in mm PRINTER DRIVE, CORE DRIVE AND LED DRIVE APPLICATIONS LOW FREQUENCY AMPLIFIER APPLICATIONS . 5.1 MAX. • High DC Current Gain : hjrF, m = 5000 (Min.) (In = 10mA)

2SC982TM

Abstract: 2SC982
Contextual Info: 2SC982TM TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Darlington) 2SC982TM Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications • Unit: mm High DC current gain: hFE (1) = 5000 (min) (IC = 10 mA) : hFE (2) = 10000 (min) (IC = 100 mA)

2SC982TM

Contextual Info: TOSHIBA 2SC982TM TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (D AR LIN G TO N ) 2SC982TM Unit in mm PRINTER DRIVE, CORE DRIVE A N D LED DRIVE APPLICATIONS LO W FREQUENCY AMPLIFIER APPLICATIONS . 5.1 MAX. • High DC Current Gain : hpg (i) = 5000 (Min.) (l£ = 10mA)

SO45

Abstract: 2N243 2N2247 2SC1072 LOW-POWER SILICON NPN 2N472 2N2897 BSY10
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

Q87TM

Contextual Info: TOSHIBA 2SC982TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) K f Q87TM PRINTER DRIVE, CORE DRIVE AND LED DRIVE APPLICATIONS Unit in mm LOW FREQUENCY AMPLIFIER APPLICATIONS .5.1 M AX. • High DC Current Gain : hpE (1 )- 5000 (Min.) (Iç = 10mA)

Contextual Info: T O SH IB A 2SC982TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2SC982TM PRINTER DRIVE, CORE DRIVE AND LED DRIVE APPLICATIONS LOW FREQUENCY AMPLIFIER APPLICATIONS U nit in mm . 5.1 M AX. • High DC Current Gain : hpE (1) = 5 0 0 0 (Min.) (lQ = 10mA)

2N904

Abstract: 2N929 texas 2N906 2N905 Emihus 2N828 2N843 2N928 2N850 LOW-POWER SILICON NPN
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475

2SD2449

Abstract: 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799
Contextual Info: Darlington Transistors F1 W c E O 30V 50V 60V 80V 100V 160V 250V 300V 400V 450V 2SC982TM 0.3A 1.SA 40V 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB1067 2SD1658 2A 2SD1509 2SD2088 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SB677 2SD687 3A 4A SA 2SD2129

2SC982TM

Contextual Info: 2SC982TM TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Darlington) 2SC982TM Printer Drive, Core Drive and LED Drive Applications Low Frequency Amplifier Applications • Unit: mm High DC current gain: hFE (1) = 5000 (min) (IC = 10 mA) : hFE (2) = 10000 (min) (IC = 100 mA)

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

PC40S14D1PR1

Abstract: 2SC982 1S1585
Contextual Info: 1/4 TECHNICAL DATA OF PC40S14D1PR1 1 Electrical Characteristics Part Number PC40S14D1PR1 1 * Reflective Sensitivity (mVpp) 2 * Decay time (at10mVpp) (msec.) 3 Resonant Frequency (kHz) 4 Resonant Impedance (Ω) 5 Anti-Resonant Frequency (kHz) 6 Anti-Resonant Impedance

equivalent of transistor 8050

Abstract: 2SC734 equivalent Equivalent to transistor 2sc945 transistor 2SC710 transistor BC 337 transistor 2SC711 bc 8050 8050 equivalent 2sc828 equivalent 2SC711
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC621 HN / BC 548 / 9014 2SC754 HN / BC 548 / 9014 2SC950 HN / BC 548 / 9014 2SC622 HN / BC 548 / 9014

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC1260

Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC1681 2SC2021 2sc2990 2SC1345
Contextual Info: - « m * 2SC 15 2 8 2SC 1529 € tt T y p e No. M Manuf. SANYO H £ = £ S TOSHIBA 2SC2102 B H NEC ¿ HITACHI « ± FUJITSU Ü fò 2SC299Ö 2SC2888 □ T MATSUSHITA MITSUBISHI — 117 A ROHM 2SC2034 2SC1260 * 2SC 1537 □- A 2SC930 * 2SC 15 3 8 □- A 2SC930

D1666

Abstract: 2N1261A R3841 BC149 GERMANIUM PNP LOW POWER TRANSISTORS 2sb122 KM7001 40518 434M KL8503
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

D1666

Abstract: ATI 200M BC149 BFS57P R3841 2sc288 ST2110 U114 2N1528 2SC287
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2SC980

Abstract: 2SC980A 2SC980-G 2SC980A-G 2sc9 YTFA Produced by Perfect Crystal Device Technology
Contextual Info: 2s c 980g 2 s c 980A g 5 /U 3 yN P N l£9*5/?ib B hÿyz?Z 9 PC T J5 £ SILICO N NPN EPITAXIAL T RA N SIST O R (PCT PRO CESS O O o High Frequency Amplifier Applications. ° High Speed Switching Applications. IN D U ST R IA L APPLICATIO NS Unit in mm : h V / ÿ s/a

2SC1957

Abstract: 2SC2407A 2SC2407 2SC2314 toshiba 2SC1763 2SC2040 2SC2033 2SC2021 2SC-2021 K 2056
Contextual Info: - m € Type No. 2SC 2014 2SC 2017 2SC 2018 2SC 2020 2SC 2024 ^ ï¥ SANYO 2SC2274 □— A * . 2SC 2044 2SC 2051 2SC 2053 2055 2056 2057 ^ 2058 /' 2059 S 2060_ 36 2 TOSHIBA 2SD1090 m □ — A □— A 2SC 2061 2SC 2062 ' 2SC 2063 ^ □— A □— A □— A

BC546BP

Abstract: TBC546B 2SC708 bc190 bc190b 2SC2378 SE6020 2SC980AGTM 2SC708 C BC190A
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 2N3722 SE8012 JE9100A JE9100B JE9100C BCV71 BCV71 A BCV71 A BCV71 A 2SC3504D 5 10 15 20 25 30 35 40 45 50 60 70 85 90 (Hz) Ie Max (A) 500m 500m 100m 100m 100m 100m 0.2 0.2 0.2 50m J~9100[J N~(;~lecslnc