2SC288 Search Results

2SA1201

Abstract: 2SC2881
Contextual Info: Transistors SMD Type Voltage Amplifier Applications 2SC2881 Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2881 Unit in mm POWER AMPLIFIER APPLICATIONS. 4.6 MAX. FEATURES: 1.7 MAX. . High Voltage J 3 = : V c e q =120V . High Transition Frequency : fT=120MHz . Pc=l ~ 2 W Mounted on Ceramic Substrate . Small Flat Package + CL08 Q45 — Q.05

2SC2881L

Abstract: 032 b
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS „ FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 „ SOT-89 RDERING INFORMATION

power transistor audio amplifier 500 watts

Abstract: 2SA1203 smd diode 03A 2SC2883
Contextual Info: Transistors SMD Type Audio Frequency Amplifier Applications 2SA1203 Features Suitable For Output Stage of 3 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2883 Absolute Maximum Ratings Ta = 25 Parameter Symbol

2SA1204

Abstract: 2SC2884
Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

Contextual Info: SMD Type Product specification 2SA1202 Features Suitable for Driver of 30 to 35 Watts Audio Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2882 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

Contextual Info: SMD Type Product specification 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

2SA1201

Abstract: 2SC2881
Contextual Info: 2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)

2SC2882

Contextual Info: TO SHIBA 2SC2882 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2882 Unit in mm PO W ER AM PLIFIER APPLICATIONS. VOLTAGE AM PLIFIER APPLICATIONS. • • • • 1.6MAX —J— 1.7MAX. Suitable for Driver of 30~35 Watts Audio Amplifier P q = 1~2W (Mounted Ceramic Substrate)

Contextual Info: T O SH IB A 2SC2880 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2880 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS. 1.6MAX. High Voltage : VCEO = 150V High Transition Frequency : fp = 120MHz P q = 0.8—2W (Mounted on Ceramic Substrate)

Contextual Info: T O SH IB A 2SC2883 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2883 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. 1.6MAX. • • • • Suitable for Output Stage of 3 Watts Amplifier P q = 1—2W (Mounted Ceramic Substrate) Small Flat Package

2SC1260

Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC1681 2SC2021 2sc2990 2SC1345
Contextual Info: - « m * 2SC 15 2 8 2SC 1529 € tt T y p e No. M Manuf. SANYO H £ = £ S TOSHIBA 2SC2102 B H NEC ¿ HITACHI « ± FUJITSU Ü fò 2SC299Ö 2SC2888 □ T MATSUSHITA MITSUBISHI — 117 A ROHM 2SC2034 2SC1260 * 2SC 1537 □- A 2SC930 * 2SC 15 3 8 □- A 2SC930

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

NEC k 3654

Abstract: 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES
Contextual Info: - m € T y p e No. £ Manuf. 2SC 3 6 4 0 iE. 2SC 3 6 4 1 H 2SC 3 6 4 2 ^ & H # SANYO TOSHIBA S NEC 2SC3643 2SC3536 2SC3644 2SC3536 tL HITACHI * ± i1 FUJITSU tfi T MATSUSHITA # 2SC3535 2SC3737 H. n 2SC3536 2SC3738 2SC 3 6 4 4 J H n 2SC3536 & 2SC2880 2SC 3 6 4 6

2SA1203

Abstract: 2SC2883
Contextual Info: TOSHIBA 2SC2883 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2883 Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. • • • • 1.6 M AX — Suitable for Output Stage of 3 Watts Amplifier P q = 1—2W (Mounted Ceramic Substrate)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2884 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z Complementary to 2SA1204 z High DC Current Gain 2. COLLECTOR 3. EMITTER APPLICATIONS z Audio Frequency Amplifier

marking POJ

Abstract: 2SA1204 2SC2884
Contextual Info: TO SHIBA 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS. 1.6 M AX — High DC Current Gain : hjrE = 100~320 Suitable for Output Stage of 1 Watts Amplifier Pq = 1~2W (Mounted on Ceramic Substrate)

types of transistors

Abstract: nec 350 C 2SC2885 2SC2946 C11531E
Contextual Info: DATA SHEET SILICON TRANSISTORS 2SC2885, 2946, 2946 1 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC

2SA1203

Abstract: 2SC2883
Contextual Info: TO SH IBA 2SC2883 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2883 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • • • • Suitable for Output Stage of 3 Watts Amplifier P q = 1~2W (Mounted Ceramic Substrate) Small Flat Package

2SA1202

Abstract: 2SC2882
Contextual Info: TOSHIBA 2SC2882 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2882 Unit in mm POWER AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. 1.7MAX. • Suitable for Driver of 30~35 Watts Audio Amplifier • Pq = 1~2W (Mounted Ceramic Substrate)

2SC2882

Abstract: 2SA1202 ic 400
Contextual Info: 2SC2882 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2882 ○ 励振段増幅用 ○ 電圧増幅用 単位: mm • 30~35 W 用アンプのドライバに適します。 • 小型フラットパッケージでハイブリッド IC 組み立て用に適します。

Contextual Info: 2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)

Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

2SA1204

Abstract: 2SC2884
Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 · Suitable for output stage of 1 watts amplifier · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)