2SD811 TOSHIBA
Abstract: 2SC510 2SD2061 2SD877 RY 228 2SD2023 2SD1270 2SD880 2SC2120 2SD867
Contextual Info: * * * * * * i * * * * * * * * * * * * * * * M anuf. a m. X 3E •y-y'ry y-y'ry ■v-yry ■y-yry ■y-yírv yyry € h SANYO 2SD313 2SD313 n jft ^ TOSHIBA 2SC2120 2SD880 2SD880 2SC510 2SC510 2SC510 2SD877 2SD877 2SD877 NEC 2SD795 2SD795 M AL HITACHI 2SC1213
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2SD228
2SD234
2SD235
2SC236
2SD237
2SD238
2SD241
2SD242
2SD243
2SD244
2SD811 TOSHIBA
2SC510
2SD2061
2SD877
RY 228
2SD2023
2SD1270
2SD880
2SC2120
2SD867
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2SC510
Abstract: 2SC5102 2SC510-2SC512 2SC510 X 2SC512
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb DE J ^ D ^ S O 56L DISCRETE/OPTO J 7 41 d U D0D7mfl 1 'T‘~ 3 J~ e * 2SC51Ö " i2SC512i SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS) Unit in nun HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.
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2SC51Ö
i2SC512i
2SC510)
2SC512)
800mW
2SA510
2SA512.
2SC510
2SC510
2SC5102
2SC510-2SC512
2SC510 X
2SC512
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2sd797
Abstract: 2SD867 2SD2061 2SD425 2SC496 Y 2SD877 2SC496 2sd667 2SC2497 2SC1398
Contextual Info: - §J £ ft T y p e No. * € Manuf. =& SANYO H 2 TOSHIBA 2 Su 136 Äiis ZSD/SI 2SD 196A Ä ±a *±a *±a 2SD797 fô 2SC782 * 2 S D 197 S * 2SD * 2SD 198 * 2 S D 199 $ ' 197A m b NEC 31 HITACHI S ± Ü FUJITSU fâ T MA T S U S H I T A □ — A ROHM 2SD797
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2SD196A
2SD197S
2SD197A
2SD797
2SC782
2SD818
2SD867
2SD2061
2SD425
2SC496 Y
2SD877
2SC496
2sd667
2SC2497
2SC1398
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2SC108A
Abstract: 2SC109A 2SA503 2SC524 2SB678 2SC512 2sc497
Contextual Info: TO-39 PACKAGE S ER IES TOSHIBA 16 TO-39 { D I S CRETE/OPT0> Application •c T vdb No. NPN High Voltage SW 2SC507 High Frequency Amp. 2SC594 High Voltage SW 2SC506 PNP v CEO hF E PC fX T Y P . v CE(sat) M A X . Ta=2E?C *Tc=2d>C V CE •c •c • b (V) (A)
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2SC507
2SC594
2SC506
2SC505
2SC504
2SC503
2SC498
2SC109A
2SC108A
2SC497
2SA503
2SC524
2SB678
2SC512
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2SC 1207
Abstract: 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687
Contextual Info: - 108 - m % 2SC 1185 a n 2SC 1188 a SANYO a 2SC 1187 2SC 1189 M £ Manuf. Type No. £ TOSHIBA B « NEC ±L HITACHI Ä ± FUJITSU Ä & T MATSUSHITA = m MITSUBISHI □ — A ROHM 2SC792 2SC2999 2SC2215 2SC1906 m 2SC2216 2SCÌ906 2SC1687 2SC2926 c 2SC2216 2SC1906
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2SC1185
2SC1187
2SC1188
2SC1189
2SC1190
2SC1192
2SC1193
2SC1196
2SC792
2SC2999
2SC 1207
2SC1741A
2SC2274
2SC2926
2SC1214
toshiba 2sc1384
2SC1253
2sc1959
2SC1906
2SC1687
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2SD643
Abstract: 2SC510 AC63 2SD643 Q QS 100 NPN Transistor
Contextual Info: ^ U D > N P N E S ffii > > tl-^ h 2SD X M J j X 'I V o 7 ^ (G -T R I ft I i ffl TENTATIVE O 5 ^ SILICON NPN TR IP L E D IFFU SE D M ESA TRANSISTOR(G-TR) INDUSTRIAL APPLICATIONS 7 ft High Power Switching Applications h p E = 1 5 0 M in . Unit in mm (I0= 30A)
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150Min.
TC-19
TB-30
2sd643
300/ie
2SC510
50/is
2SD643
2SC510
AC63
2SD643 Q
QS 100 NPN Transistor
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2SC512
Abstract: 2SC510 2sc5126 2sc5 2SA510 2SC55 2SA512 AI 01234 2SA1943-O 2SC5 2sc510 toshiba
Contextual Info: 5 /U 3 > N P N = « ffi*0 B h 5 > 5 > *5 > PCT75ÍC SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) o 'y + y ? m a O o H i g h F r e q u e n c y P ow e r A m p l i f i e r A p p l i c a t i o n s , o H igh V o l t a g e S w i t c h i n g and R e g u l a t o r A p p l i c a t i o n s .
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PCT75Ã
2SC510
2SC512
800mW
2SA510,
2SA512
2SA510
2SA512
2SC512
2sc5126
2sc5
2SC55
AI 01234
2SA1943-O 2SC5
2sc510 toshiba
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2SA510
Abstract: transistor 2sa5100 2SC510 2SA512 2SC51 2SA510-R 2SA512-R 2SC512 Produced by Perfect Crystal Device Technology 2sc5
Contextual Info: 2SA 5 2 / U D > P N P I t : ^ 2 / > » j W B h 5 > y 7 >^ P C T Ä Ä SILICON 2S a 5 PNP EPITAXIAL TRANSISTOR (PC T PROCESS) o O s iS flt£E * -i i O if i * 1 INDUSTRIAL APPLICATIONS o High Frequency Power Amplifier, High Voltage Switching and Regulator Applications
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2SC510,
2SA510)
PC-800nW
2SC510
2SC512
sa510
2SA510
transistor 2sa5100
2SA512
2SC51
2SA510-R
2SA512-R
2SC512
Produced by Perfect Crystal Device Technology
2sc5
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2SA481
Abstract: 2SC484 transistors EP 487 2SC1000 2sc400 2SC497 2SC372 2SC486 2SC501 transistor 2SC372
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SC503
2SC504
2SC495
2SC509
2SC510
2SA481
2SC484
transistors EP 487
2SC1000
2sc400
2SC497
2SC372
2SC486
2SC501
transistor 2SC372
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