2SD811 TOSHIBA
Abstract: 2SC510 2SD2061 2SD877 RY 228 2SD2023 2SD1270 2SD880 2SC2120 2SD867
Contextual Info: * * * * * * i * * * * * * * * * * * * * * * M anuf. a m. X 3E •y-y'ry y-y'ry ■v-yry ■y-yry ■y-yírv yyry € h SANYO 2SD313 2SD313 n jft ^ TOSHIBA 2SC2120 2SD880 2SD880 2SC510 2SC510 2SC510 2SD877 2SD877 2SD877 NEC 2SD795 2SD795 M AL HITACHI 2SC1213
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2SD228
2SD234
2SD235
2SC236
2SD237
2SD238
2SD241
2SD242
2SD243
2SD244
2SD811 TOSHIBA
2SC510
2SD2061
2SD877
RY 228
2SD2023
2SD1270
2SD880
2SC2120
2SD867
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2SC510
Abstract: 2SC5102 2SC510-2SC512 2SC510 X 2SC512
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb DE J ^ D ^ S O 56L DISCRETE/OPTO J 7 41 d U D0D7mfl 1 'T‘~ 3 J~ e * 2SC51Ö " i2SC512i SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS) Unit in nun HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.
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2SC51Ö
i2SC512i
2SC510)
2SC512)
800mW
2SA510
2SA512.
2SC510
2SC510
2SC5102
2SC510-2SC512
2SC510 X
2SC512
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2SC510
Abstract: 2SC512 2SA512 2SA51 2SC510 X 2SC510A 2SA510 2SC510-2SC512 2sc510 toshiba
Contextual Info: ~5Í TOSHIBA {DISCRETE/OPTO} 90 97250 TO SHIBA DE 56L <D I S C R E T E / O P T O DDD741A J7^id o 7 2 SC5 1 0 ' i2 S C 5 1 2 i S IL IC O N NPN T R IP L E D IF F U SE D T YPE PCT RPOCESS) Unit in nun HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.
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DDD741A
2SC510
2SC512
39MAX.
45MAX
2SC510)
2SC512)
800mW
2SA510
2SA512.
2SA512
2SA51
2SC510 X
2SC510A
2SC510-2SC512
2sc510 toshiba
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2sd797
Abstract: 2SD867 2SD2061 2SD425 2SC496 Y 2SD877 2SC496 2sd667 2SC2497 2SC1398
Contextual Info: - §J £ ft T y p e No. * € Manuf. =& SANYO H 2 TOSHIBA 2 Su 136 Äiis ZSD/SI 2SD 196A Ä ±a *±a *±a 2SD797 fô 2SC782 * 2 S D 197 S * 2SD * 2SD 198 * 2 S D 199 $ ' 197A m b NEC 31 HITACHI S ± Ü FUJITSU fâ T MA T S U S H I T A □ — A ROHM 2SD797
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2SD196A
2SD197S
2SD197A
2SD797
2SC782
2SD818
2SD867
2SD2061
2SD425
2SC496 Y
2SD877
2SC496
2sd667
2SC2497
2SC1398
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2SC108A
Abstract: 2SC109A 2SA503 2SC524 2SB678 2SC512 2sc497
Contextual Info: TO-39 PACKAGE S ER IES TOSHIBA 16 TO-39 { D I S CRETE/OPT0> Application •c T vdb No. NPN High Voltage SW 2SC507 High Frequency Amp. 2SC594 High Voltage SW 2SC506 PNP v CEO hF E PC fX T Y P . v CE(sat) M A X . Ta=2E?C *Tc=2d>C V CE •c •c • b (V) (A)
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2SC507
2SC594
2SC506
2SC505
2SC504
2SC503
2SC498
2SC109A
2SC108A
2SC497
2SA503
2SC524
2SB678
2SC512
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2SC 1207
Abstract: 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687
Contextual Info: - 108 - m % 2SC 1185 a n 2SC 1188 a SANYO a 2SC 1187 2SC 1189 M £ Manuf. Type No. £ TOSHIBA B « NEC ±L HITACHI Ä ± FUJITSU Ä & T MATSUSHITA = m MITSUBISHI □ — A ROHM 2SC792 2SC2999 2SC2215 2SC1906 m 2SC2216 2SCÌ906 2SC1687 2SC2926 c 2SC2216 2SC1906
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2SC1185
2SC1187
2SC1188
2SC1189
2SC1190
2SC1192
2SC1193
2SC1196
2SC792
2SC2999
2SC 1207
2SC1741A
2SC2274
2SC2926
2SC1214
toshiba 2sc1384
2SC1253
2sc1959
2SC1906
2SC1687
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2SD643
Abstract: 2SC510 AC63 2SD643 Q QS 100 NPN Transistor
Contextual Info: ^ U D > N P N E S ffii > > tl-^ h 2SD X M J j X 'I V o 7 ^ (G -T R I ft I i ffl TENTATIVE O 5 ^ SILICON NPN TR IP L E D IFFU SE D M ESA TRANSISTOR(G-TR) INDUSTRIAL APPLICATIONS 7 ft High Power Switching Applications h p E = 1 5 0 M in . Unit in mm (I0= 30A)
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150Min.
TC-19
TB-30
2sd643
300/ie
2SC510
50/is
2SD643
2SC510
AC63
2SD643 Q
QS 100 NPN Transistor
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2SC512
Abstract: 2SC510 2sc5126 2sc5 2SA510 2SC55 2SA512 AI 01234 2SA1943-O 2SC5 2sc510 toshiba
Contextual Info: 5 /U 3 > N P N = « ffi*0 B h 5 > 5 > *5 > PCT75ÍC SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) o 'y + y ? m a O o H i g h F r e q u e n c y P ow e r A m p l i f i e r A p p l i c a t i o n s , o H igh V o l t a g e S w i t c h i n g and R e g u l a t o r A p p l i c a t i o n s .
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PCT75Ã
2SC510
2SC512
800mW
2SA510,
2SA512
2SA510
2SA512
2SC512
2sc5126
2sc5
2SC55
AI 01234
2SA1943-O 2SC5
2sc510 toshiba
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2SA5101
Abstract: 2SA510 2SA510-2SA512 2SA512 2SC510 2SA51 2SC512
Contextual Info: TOSHIBA { DI SC RETE/OPTO} 2 S A 5 1 0 1 2 S A 5 1 2 90 97250 TO SHI BA St. DE I ^ G ^ T E S O 0007224 □ | SILICON PNP EPITAXIAL TYPE PCT PROCESS 3b'C CDISCRETE/OPTO) 07224 INDUSTRIAL APPLICATIONS Unit in mm £ £ 3 9 max. HIGH FREQUENCY AMPLIFIER APPLICATIONS.
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2SA5101
2SA512
-10OV
2SA510)
2SA512)
800mW
2SC510
2SC512.
2SA510
2SA510-2SA512
2SA512
2SA51
2SC512
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2SA510
Abstract: transistor 2sa5100 2SC510 2SA512 2SC51 2SA510-R 2SA512-R 2SC512 Produced by Perfect Crystal Device Technology 2sc5
Contextual Info: 2SA 5 2 / U D > P N P I t : ^ 2 / > » j W B h 5 > y 7 >^ P C T Ä Ä SILICON 2S a 5 PNP EPITAXIAL TRANSISTOR (PC T PROCESS) o O s iS flt£E * -i i O if i * 1 INDUSTRIAL APPLICATIONS o High Frequency Power Amplifier, High Voltage Switching and Regulator Applications
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2SC510,
2SA510)
PC-800nW
2SC510
2SC512
sa510
2SA510
transistor 2sa5100
2SA512
2SC51
2SA510-R
2SA512-R
2SC512
Produced by Perfect Crystal Device Technology
2sc5
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2SA481
Abstract: 2SC484 transistors EP 487 2SC1000 2sc400 2SC497 2SC372 2SC486 2SC501 transistor 2SC372
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SC503
2SC504
2SC495
2SC509
2SC510
2SA481
2SC484
transistors EP 487
2SC1000
2sc400
2SC497
2SC372
2SC486
2SC501
transistor 2SC372
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000HÂ
2SB415
2SB 710
2sc1061
2sd524
2sb504
HD68P01
2sb507
2sa762
2sc827
2SC1362
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B0411
Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
B0411
B0733
THD200F1
dk52
2SC4977
2N5415 REPLACEMENT
TIP 2n3055
BD68D
SGS-Thomson cross reference
BUX37 THOMSON
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TOSHIBA MG150N2YS40
Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入
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050106DAA1
/SC-70
YTF612
2SK2381
YTF841
2SK2387
YTF442
2SK2149
YTF613
TOSHIBA MG150N2YS40
mg75n2ys40
MG15N6ES42
mg150n2ys40
2SK150A
toshiba s2530a
2sk270a
MG8N6ES42
MG15G1AL2
mg75j2ys40
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mg75n2ys40
Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入
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050106DAA1
YTF842
2SK2387
YTF441
2SK2149
YTF613
2SK2381
YTF843
YTF442
mg75n2ys40
2N3055 TOSHIBA
mg150n2ys40
TLR103
TOSHIBA 2N3055
MG15N6ES42
2SK150A
TOSHIBA MG150N2YS40
2sk270a
S2530A
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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