2SD244 Search Results

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2449 PO W ER AM PLIFIER APPLICATIONS Unit in mm 2 0.SM A X . • High Breakdown Voltage : V q e o = 160V (Min.) • Complementary to 2SB1594 ¿ 3 .3 ± 0 .2 pr y > M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

2SD2449

Abstract: 2-21F1A 2SB1594 2sb15
Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 High Breakdown Voltage : Vqe O = 160 V (Min.) Complementary to 2SB1594 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO

2SD2440

Contextual Info: TOSHIBA 2SD2440 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 SWITCHING APPLICATION • High Breakdown Voltage VCBO = 100 V MIN. Ve b O = 18 V (MIN.) • Low Saturation Voltage VCE(sat) = 1.2'V (MAX.) (IC = 5A , IB = 1A) • • High Speed : tf = 1 /us (TYP.) (Ic = 5 A, IB = ±0.5 A)

2-21F1A

Abstract: 2SB1594 2SD2449
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD2449 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2449 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 160 V (Min.) Complementary to 2SB1594 M A X IM U M RATINGS (Ta = 25°C)

2SD2440

Contextual Info: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V • Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) • High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)

ic 4510

Contextual Info: TO SH IB A TOSHIBA TRANSISTOR 2SB1594 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2 S B 1 594 Unit in mm .3 + 0.2 20.5M A X • High Breakdown Voltage : V £E O = —160V (Min.) • Complementary to 2SD2449 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SB1590K Transistors Power Transistor -15V, -1A 2SB1590K zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) at IC / IB = -0.4A / -20mA. 2) IC = -1A 3) Complements the 2SD2444K. SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2)

Contextual Info: 2SD2444K Transistors Power Transistor 15V, 1A 2SD2444K zFeatures 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) at IC / IB = 0.4A / 20mA. 2) IC = 1A 3) Complements the 2SB1590K. zExternal dimensions (Unit : mm) SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2) (1)

2sb1590

Abstract: 2SB1590K 2SD2444K T146
Contextual Info: 2SB1590K Transistors Power Transistor -15V, -1A 2SB1590K zExternal dimensions (Unit : mm) zFeatures 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) at IC / IB = -0.4A / -20mA. 2) IC = -1A 3) Complements the 2SD2444K. SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2)

2SD2444K

Abstract: hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type Power Transistor 2SD2444K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 IC = 1A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

Contextual Info: 2SD2444K Transistors Power Transistor 15V, 1A 2SD2444K Features 1) Low saturation voltage, VCE(sat) = 0.3V (Max.) at IC / IB = 0.4A / 20mA. 2) IC = 1A 3) Complements the 2SB1590K. External dimensions (Unit : mm) SMT3 2.9 1.1 0.4 0.8 1.6 2.8 (3) (2) (1) 0.3Min.

D218

Abstract: 2SB1590K 2SD2444K B218
Contextual Info: Transistors 2SB1590K 2SD2444K 96-150-B218 (96-247-D218) 293

2SD2441

Contextual Info: Transistor 2SD2441 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm • Absolute Maximum Ratings * +0.1 1.0–0.2 0.4±0.08 +0.25 0.4max. 45° 4.0–0.20 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Contextual Info: 2SB1594 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1594 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −160 V (min) • Complementary to 2SD2449 Absolute Maximum Ratings (Tc = 25°C) Characteristics

Contextual Info: TO SH IB A 2SD2449 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2449 Unit in mm High Breakdown Voltage : V^EO = 160V (Min.) Complementary to 2SB1594 .3 + 0.2 20.5M A X MAXIMUM RATINGS (Ta = 25°C)

2SD2449

Abstract: 2-21F1A 2SB1594
Contextual Info: 2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1594 Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: TO SH IBA 2SD2440 TOSHIBA TRANSISTOR 2SD2440 SWITCHING APPLICATION • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm • High Breakdown Voltage : VcBO = 100 V MIN. : VEBO = 18 V (MIN.) Low Saturation Voltage : VcE(sat) = 1-2 V (MAX.) 0 3 . 6 ± 0.2 ;15.8 ± 0 .5^

D2440

Abstract: 2SD2440
Contextual Info: 2SD2440 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2440 Switching Application Unit: mm • High breakdown voltage: VCBO = 100 V • Low saturation voltage: VCE sat = 1.2 V (max) (IC = 5 A, IB = 1 A) : VEBO = 18 V • High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2440 SWITCHING APPLICATION • High Breakdown Voltage • Low Saturation Voltage • High Speed • High DC C urren Gain VCBO = !00V MIN. V e BO = 18V (MIN.) v CE(sat) = l-2V (MAX.) (IC = 5A, I b = 1A) t f = l^ s (TYP.) d c = 5A, Iß = ± 0 .5 A )

Contextual Info: Transistors SMD Type Product specification 2SD2444K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 IC = 1A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

2SD2440

Contextual Info: TO SH IBA 2SD2440 TOSHIBA TRANSISTOR 2SD2440 SWITCHING APPLICATION • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm • High Breakdown Voltage : VcBO = 100 V MIN. : VEBO = 18 V (MIN.) Low Saturation Voltage : VcE(sat) = 1-2 V (MAX.) 15.810.5 , Q¡3.610.2

2SB1594

Abstract: 2SD2449
Contextual Info: 2SB1594 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 594 Unit in mm 20.5MAX. High Breakdown Voltage : V^EO = —160 V (Min.) Complementary to 2SD2449 53.3 ±0.2 MAXIMUM RATINGS (Ta = 25°C)

2SD2449

Contextual Info: 2SD2449 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2449 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SB1594 Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 2SB1590K 2SD2444K Transistors I Power Transistor 15V, —1A 2S B 1590K • F e a tu re s 1) Low VcE(eai). (M a x.— 0.3V at Io/Ib = ~ 0.4A/—-20m A) 2) lc = — 1A 3) C om plem ents the 2 S D 2 4 4 4 K • A b s o lu t e m ax im u m ra tin g s (T a = 2 5 'C )