2SD242 Search Results

2SD2420

Contextual Info: Power Transistors 2SD2420 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

2SD2420

Abstract: 2SD2420A 2SB1623 2SB1623A
Contextual Info: Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C 2SD2420 Emitter open 2SD2420A Symbol Rating

2SD2420

Abstract: ic shelf life
Contextual Info: Power Transistors 2SD2420 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO

2SB1623

Abstract: 2SB1623A 2SD2420 2SD2420A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C

2SB1623

Abstract: 2SB1623A 2SD2420 2SD2420A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1

2SD2422

Abstract: 2SD242 2sd transistors equivalent
Contextual Info: 2SD2422 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FP (SC-67) package • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated • built-in resistors between base and emitter •

TRANSISTOR C-111

Abstract: kc500
Contextual Info: H ITACH I 2SD2423 Silicon NPN Epitaxial Application Low frequency power amplifier Features • The transistor with a built-in zener diode of surge absorb. Table 1 Absolute M aximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage v CBO

2SB1623

Abstract: 2SB1623A 2SD2420 2SD2420A 2SD24
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 M Di ain sc te on na

2SD2423

Abstract: hitachi Zener Diode marking code DSA003646
Contextual Info: 2SD2423 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Features The transistor with a built-in zener diode of surge absorb. Outline UPAK 2, 4 1 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector Flange ID 2 kΩ (Typ) 0.5 Ω

2SD2426

Contextual Info: Ordering number:EN4716 NPN Epitaxial Planar Silicon Transistor 2SD2426 80V/2A Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. unit:mm 2084B [2SD2426] Features 2.6 1.4 1.2

Contextual Info: Ordering number:EN 4 7 1 6 2SD2426 No.4716 NPN Epitaxial Planar Silicon Transistor 80V/2A Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features • Darlington connection •High DC current gain.

2SD2420

Contextual Info: Power Transistors 2SD2420 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

2SD2425

Abstract: nsi 60 jg UV 471
Contextual Info: = t — 5> • 5 / — h '> > ; = ! > h =? S ilic o n T r a n s is t o r 2SD2425 N P N x fc: ^ + 1j □ > h 9 + S £ j£ ;W 2SD2425 DC/DC ? W Ì ^ mm • Y y 4 ~ft£ i: i ; f l t t = 1 .5 ± 0 .1 « « o 'M f ^ t s-ïrj 60 4> ^ £ f f y N" .y - -7 ^ T 'cfe Ò

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C

2SD2423

Abstract: 2SD24 A103-000 ID2K
Contextual Info: 2SD2423 Silicon NPN Epitaxial Application UPAK Low frequency power amplifier 1 Features 3 2 • The transistor with a built–in zener diode of surge absorb. 1. Base 2. Collector 3. Emitter 4. Collector 4 2, 4 1 ID 2 kΩ typ 0.5kΩ (typ) 3 Table 1 Absolute Maximum Ratings (Ta = 25°C)

2SD2420

Contextual Info: Power Transistors 2SD2420 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

transistor 4716

Abstract: 2SD2426 m716 n471
Contextual Info: Ordering number: EN 4 7 1 6 _ 2SD2426 N o .4716 N P N E pitaxial Planar Silicon Transistor SAÜYO i D river Applications A p p lica tio n s • Motor drivers, printer ham m er drivers, relay drivers, voltage regulator control. F eatures • Darlington connection

D1615

Abstract: transistor ab2 12
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for

C1959

Abstract: nec 2405 NEC 2403 2sc4560 nec 2410 2SD2409 2sd2427 nec 2412 2SD1509 NEC 2415
Contextual Info: - sa s T y p e Ho. tt £ Manu f. = X SANYO S TOSHIBA n B NEC B ÍL HITACH I s ± a F U JIT S U fé T MATSUSHITA Z * M ITSUBISHI □ 267 — A ROHM 2SD 2403 B S 2SD1624 2SC4541 2SO 2404 fé T 2SD2426 2SD1509 2SD 2405 fé T 2SD2251 2SD1433 2SO 2406 ^ Si 2SD2202

Hitachi DSA002756

Contextual Info: 2SD2423 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Features The transistor with a built-in zener diode of surge absorb. Outline 2SD2423 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and