2SB1623 Search Results

2SB1623

Contextual Info: Power Transistors 2SB1623 Silicon PNP epitaxial planer type Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60

2SD2420

Abstract: 2SD2420A 2SB1623 2SB1623A
Contextual Info: Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C 2SD2420 Emitter open 2SD2420A Symbol Rating

2SB1623

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 M Di ain sc te on na tin nc ue e/ d 2.9±0.2 • Features Collector-base voltage (Emitter open)

2SB1623A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 M Di ain sc te on na tin nc ue e/ d 2.9±0.2 • Features Collector-base voltage (Emitter open)

2SB1623A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features φ 3.2±0.1 ■ Absolute Maximum Ratings Ta = 25°C

2SB1623

Contextual Info: Power Transistors 2SB1623 Silicon PNP epitaxial planar type Unit: mm For power amplification 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage

2SB1623

Abstract: 2SB1623A 2SD2420 2SD2420A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

2SB1623

Abstract: 2SB1623A 2SD2420 2SD2420A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1

2SB1623

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features φ 3.2±0.1 ■ Absolute Maximum Ratings Ta = 25°C

2SB1623

Abstract: 2SB1623A 2SD2420 2SD2420A 2SD24
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 M Di ain sc te on na

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 M Di ain sc te on na tin nc ue e/ d 2.9±0.2 • Features Parameter Symbol

2SB1623A

Contextual Info: Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −80 V Collector-emitter voltage (Base open)

2SB1623A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features φ 3.2±0.1 ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C

2SB1623

Contextual Info: Power Transistors 2SB1623 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −60 V Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and