2SD2420 Search Results

2SD2420

Contextual Info: Power Transistors 2SD2420 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

2SD2420

Abstract: 2SD2420A 2SB1623 2SB1623A
Contextual Info: Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C 2SD2420 Emitter open 2SD2420A Symbol Rating

2SD2420

Abstract: ic shelf life
Contextual Info: Power Transistors 2SD2420 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO

2SB1623

Abstract: 2SB1623A 2SD2420 2SD2420A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C

2SB1623

Abstract: 2SB1623A 2SD2420 2SD2420A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1

2SB1623

Abstract: 2SB1623A 2SD2420 2SD2420A 2SD24
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 M Di ain sc te on na

2SD2420

Contextual Info: Power Transistors 2SD2420 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C

2SD2420

Contextual Info: Power Transistors 2SD2420 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the