2SD238 Search Results

2SD238 Datasheets (99)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SD238	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	46.49KB	1
2SD238	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	42.6KB	1
2SD238	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	80.21KB	1
2SD238	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	167.55KB	1
2SD238	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	167.92KB	1
2SD238	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	40.4KB	1
2SD238	Unknown	Cross Reference Datasheet	Scan	PDF	38.3KB	1
2SD238	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	113.29KB	1
2SD238	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	42.36KB	1
2SD238	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	87.66KB	1
2SD238	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	102.54KB	2
2SD238	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	38.83KB	1
2SD2380	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	38.92KB	1
2SD2380	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	34.73KB	1

2SD2381	Hitachi Semiconductor	Silicon NPN Triple Diffused Transistor	Original	PDF	9.96KB	2
2SD2381	Renesas Technology	Silicon NPN Triple Diffused	Original	PDF	15.61KB	3
2SD2381	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	79.98KB	1
2SD2381	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	38.92KB	1
2SD2381	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	34.73KB	1
2SD2381	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	43.83KB	1

2SD238 Price and Stock

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Renesas Electronics Corporation 2SD2383-T2B-A NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SD2383-T2B-A		6,000		2,662	1 - 10 - 100 - 1000 - 10000 $0.13	Buy Now
Rochester Electronics	2SD2383-T2B-A		6,000		1	1 - 10 - 100 $0.14 1000 $0.11 10000 $0.10	Buy Now
Sanken Electric Co Ltd 2SD2382 Trans GP BJT NPN 70V 6A 3-Pin(3+Tab) TO-220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	2SD2382		879		98	1 - 10 - 100 $0.84 1000 $0.78 10000 $0.78	Buy Now
	2SD2382		348		2	1 - 10 $1.49 100 $1.26 1000 $1.15 10000 $1.15	Buy Now
Arrow Electronics	2SD2382		348	4 Weeks	1	1 $1.83 10 $1.49 100 $1.26 1000 $1.15 10000 $1.15	Buy Now
Quest Components	2SD2382		703			1 $2.05 10 $2.05 100 $2.05 1000 $0.84 10000 $0.84	Buy Now
Vishay Sprague 2SD2383 IN STOCK SHIP TODAY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Component Electronics, Inc	2SD2383		200			1 - 10 - 100 - 1000 - 10000 -	Buy Now

2SD238 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2-16C1A Contextual Info: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 5 5 8 U nit in mm POWER AMPLIFIER APPLICATIONS 15 9 V i A X • • )S3.2 ♦ 0.2 High Breakdown Voltage : V cE O = —140V (Min.) Complementary to 2SD2387 M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO v EBO	OCR Scan	--140v 2sd2387 100fl -140v +3--50ma --12a 2-16c1a	PDF
2SB1559 Abstract: 2SD2389 Contextual Info: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1559 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2389 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base	Original	2sb1559 2sd2389	PDF
2SD2389 Abstract: audio Darlington 6A 2SB1559 Contextual Info: Inchange Semiconductor Product Specification 2SB1559 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2389 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to	Original	2sb1559 2sd2389 audio darlington 6a	PDF
2SB1558 Abstract: 2SD2387 Contextual Info: Inchange Semiconductor Product Specification 2SB1558 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PI package ・Complement to type 2SD2387 APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to	Original	2sb1558 2sd2387	PDF
2SD2386 Abstract: 2SB1557 NPN POWER DARLINGTON TRANSISTORS Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION	Original	2sd2386 2sb1557 npn power darlington transistors	PDF
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V q e O = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2sb1555 2sd2384	PDF
2SB1557 Abstract: 2SD2386 Contextual Info: TOSHIBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 557 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2sb1557 2sd2386	PDF
B1557 Abstract: 2SB1557 2SD2386 Contextual Info: 2SB1557 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1557 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2386 Maximum Ratings (Tc = 25°C) Characteristics Symbol	Original	2sb1557 2sd2386 2-16c1a b1557	PDF
2SB1557 Abstract: 2SD2386 Contextual Info: TO SH IBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 03.2 ±0.2 1 5.9 M A X . High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Tc = 25°C)	OCR Scan	2sb1557 2sd2386	PDF
2SB1558 Abstract: 2SD2387 Contextual Info: TO SH IBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SD2387 Unit in mm 1 5.9 M A X . • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 t> 03.2 ±0.2 -Ú	OCR Scan	2sd2387 2sb1558	PDF
2SB1555 Abstract: 2-21F1A 2SD2384 Contextual Info: TO SH IBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 555 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2384 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2sb1555 --140v 2sd2384 2-21f1a	PDF
TOSHIBA Transistor Silicon PNP Epitaxial Type Abstract: 2SB1557 2SD2386 Contextual Info: 2SB1557 TOSHIBA TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE D ARLING TO N POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 3.2 ± 0 .2 15.9M AX High Breakdown Voltage : VcEO = —140V (Min.) Complementary to 2SD2386 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2sb1557 --140v 2sd2386 toshiba transistor silicon pnp epitaxial type	PDF
D2387 Abstract: transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387 Contextual Info: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics	Original	2sd2387 2sb1558 2-16c1a d2387 +3transistor d2387 data sheet ica350 transistor d2387	PDF
2-21F1A Abstract: 2SB1555 2SD2384 Contextual Info: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics	Original	2sd2384 2sb1555 2-21f1a	PDF

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD2386 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 PO W ER AM PLIFIER APPLICATIONS Unit in mm .2 + 0.2 15.9MAX. • High Breakdown Voltage : V^EO = 140V (Min.) • Complementary to 2SB1557 ^o 1 , / J- f / i k A 5	OCR Scan	2sd2386 2sb1557	PDF
2SD2386 Abstract: 2SB1557 npn DARLINGTON 10A Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION	Original	2sd2386 2sb1557 npn darlington 10a	PDF
STA508A Abstract: STA509A 2sd2141 2sd2382 2sc3852 STA463C STA415A fn812 SDC09 smd 18w Contextual Info: Transistors and MOS FETs Transistors and MOS FETs by Application Application Page Igniters 2SD2141 58 57 Injectors 2SC4153 2SD2382 STA461C STA463C STA508A SDC09 AT Automatic Transmissions 2SA1488 2SA1488A 50 52 Cruise controls 2SA1568 2SC4065 SLA8004 2SA1567	Original	2sd2141 2sc4153 2sd2382 sta461c +11sta463c sta508a sdc09 2sa1488 2sa1488a 2sa1568 sta509a 2sc3852 sta415a fn812 smd 18w	PDF
2SB1557 Abstract: 2SD2386 Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD2386 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 Unit in mm PO W ER AM PLIFIER APPLICATIONS ' V, 1 5.9 M A X _ • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1557 03.2 ±0.2	OCR Scan	2sd2386 2sb1557	PDF
2SB1558 Abstract: 2SD2387 Contextual Info: TOSHIBA 2SB1558 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 55 8 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2387 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2sb1558 2sd2387	PDF
a1000n Abstract: common emitter amplifier 2-21F1A 2SB1556 2SD2385 Contextual Info: TOSHIBA 2SB1556 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2SB1 556 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2sb1556 2sd2385 a1000n common emitter amplifier +12-21f1a	PDF
2SD2389 Abstract: HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON npn DARLINGTON 10A npn darlington audio Darlington 6A 2SB1559 Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2389 DESCRIPTION •With TO-3PN package ·Complement to type 2SB1559 ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION	Original	2sd2389 2sb1559 high voltage switching npn power darlington npn darlington 10a +2npn darlington audio darlington 6a	PDF
2SB1556 Contextual Info: 2SB1556 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1556 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2385 Maximum Ratings (Tc = 25°C) Characteristics Symbol	Original	2sb1556 2sd2385 2-21f1a	PDF
D2386 Abstract: D2386 TOSHIBA 2SB1557 2SD2386 Contextual Info: 2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics	Original	2sd2386 2sb1557 2-16c1a d2386 +1d2386 toshiba	PDF
2SB1557 Abstract: 2SD2386 Contextual Info: TO SH IBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2386 3.2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2sb1557 2sd2386	PDF

2SD238 Search Results

2SD238 Datasheets (99)

2SD238 Price and Stock

Renesas Electronics Corporation 2SD2383-T2B-A

Sanken Electric Co Ltd 2SD2382

Vishay Sprague 2SD2383

2SD238 Datasheets Context Search

2-16C1A

2SB1559

2SD2389

2SB1558

2SD2386

2SB1557

B1557

2SB1557

2SB1558

2SB1555

TOSHIBA Transistor Silicon PNP Epitaxial Type

D2387

2-21F1A

2SD2386

STA508A

2SB1557

2SB1558

a1000n

2SD2389

2SB1556

D2386

2SB1557