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    D2387 Search Results

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    Samtec Inc FFMD-10-D-23.87-01

    .050" TIGER EYE IDC RIBBON CABL
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    DigiKey FFMD-10-D-23.87-01 Bulk 1
    • 1 $19.35
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    Master Electronics FFMD-10-D-23.87-01
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    • 10 $12.67
    • 100 $10.23
    • 1000 $6.91
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    Samtec Inc FFMD-04-D-23.87-01

    .050" TIGER EYE IDC RIBBON CABL
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    DigiKey FFMD-04-D-23.87-01 Bulk 1
    • 1 $18.88
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    Master Electronics FFMD-04-D-23.87-01
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    • 10 $10.57
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    Samtec Inc FFMD-10-D-23.87-01-D06

    .050" TIGER EYE IDC RIBBON CABL
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    DigiKey FFMD-10-D-23.87-01-D06 Bulk 1
    • 1 $29.76
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    Master Electronics FFMD-10-D-23.87-01-D06
    • 1 $18.36
    • 10 $16.38
    • 100 $13.99
    • 1000 $10.91
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    Samtec Inc ACD-238720-01

    - Bulk (Alt: ACD-238720-01)
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    Avnet Americas ACD-238720-01 Bulk 10,800
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    Infineon Technologies AG GATELEAD2387XPSA1

    - Trays (Alt: GATELEAD2387XPSA1)
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    Avnet Americas GATELEAD2387XPSA1 Tray 232
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    D2387 Datasheets Context Search

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    D2387

    Abstract: transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387
    Contextual Info: D2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SD2387 2SB1558 2-16C1A D2387 transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387 PDF

    transistor D2387

    Abstract: D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558
    Contextual Info: D2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor D2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SD2387 2SB1558 2-16C1A transistor D2387 D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558 PDF

    Contextual Info: D2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SD2387 2SB1558 2-16C1A PDF

    D2387

    Abstract: 2SB1558 2SD2387 transistor D2387
    Contextual Info: D2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor D2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		2SD2387 2SB1558 2-16C1A D2387 2SB1558 2SD2387 transistor D2387 PDF