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    Infineon Technologies AG GATELEAD2387XPSA1

    - Trays (Alt: GATELEAD2387XPSA1)
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    Avnet Americas GATELEAD2387XPSA1 Tray 232
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    Fabco-Air PSD2-3.875

    CYLINDER, INDUSTRY INTERCHANGEABLE,3/4" BORE, SGL ROD, DBL ACT, PANCAKE II
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    RS PSD2-3.875 Bulk 1
    • 1 $113.78
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    Samtec Inc FFSD-05-D-23.87-01-N-R

    Ribbon Cables / IDC Cables
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    Sager FFSD-05-D-23.87-01-N-R
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    Master Electronics FFSD-05-D-23.87-01-N-R
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    • 10 $15.54
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    Samtec Inc FFSD-10-D-23.87-01-N

    Ribbon Cables / IDC Cables
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    Sager FFSD-10-D-23.87-01-N
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    Master Electronics FFSD-10-D-23.87-01-N
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    • 10 $17.94
    • 100 $12.44
    • 1000 $9.11
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    Samtec Inc FFSD-05-D-23.87-01-N-RW

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    Master Electronics FFSD-05-D-23.87-01-N-RW
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    • 10 $14.10
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    D2387 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D2387

    Abstract: transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387
    Contextual Info: D2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2sd23872sb15582-16c1ad2387+3transistor d2387 data sheetica350transistor d2387 PDF

    transistor D2387

    Abstract: D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558
    Contextual Info: D2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor D2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2sd23872sb15582-16c1atransistor d2387+3d23872sd2387 data sheettransistor d2387 data sheet PDF

    Contextual Info: D2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2sd23872sb15582-16c1a PDF

    D2387

    Abstract: 2SB1558 2SD2387 transistor D2387
    Contextual Info: D2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor D2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		2sd23872sb15582-16c1ad2387+1transistor d2387 PDF