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    Infineon Technologies AG GATELEAD2386XPSA1

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    Avnet Americas GATELEAD2386XPSA1 Tray 130
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    EBV Elektronik GATELEAD2386XPSA1 4 Weeks 1
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    Bimba Manufacturing Company D-23860

    U-CUP .315 ID BUNA, METRIC BASIC TWIN BORE
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    RS D-23860 Bulk 5 Weeks 1
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    Bimba Manufacturing Company D-23861

    U-CUP .531 ID BUNA, METRIC BASIC TWIN BORE
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    RS D-23861 Bulk 5 Weeks 1
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    Bimba Manufacturing Company D-23862

    U-CUP .75 ID BUNA, METRIC BASIC TWIN BORE
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    RS D-23862 Bulk 5 Weeks 1
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    Bimba Manufacturing Company D-23862-V

    U-CUP .75 ID VITON, METRIC BASIC TWIN BORE
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    RS D-23862-V Bulk 5 Weeks 1
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    D2386 Datasheets Context Search

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    D2386

    Abstract: D2386 TOSHIBA 2SB1557 2SD2386
    Contextual Info: D2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SD2386 2SB1557 2-16C1A D2386 D2386 TOSHIBA 2SB1557 2SD2386 PDF

    D2386

    Abstract: 2SB1557 2SD2386
    Contextual Info: D2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor D2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		2SD2386 2SB1557 2-16C1A D2386 2SB1557 2SD2386 PDF

    D2386 TOSHIBA

    Contextual Info: D2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557 Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SD2386 2SB1557 2-16C1A D2386 TOSHIBA PDF