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    Infineon Technologies AG GATELEAD2386XPSA1

    - Trays (Alt: GATELEAD2386XPSA1)
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    Avnet Americas GATELEAD2386XPSA1 Tray 130
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    EBV Elektronik GATELEAD2386XPSA1 4 Weeks 1
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    Mersen Electrical Power A430C50-15 (D238697)

    FUSE, CAPACITOR PROTECTION, 4.3KV, TYPE 15, EXTERNAL FEMALE TO BOLT, 65KA, 50A
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    RS A430C50-15 (D238697) Bulk 5 17 Weeks 1
    • 1 $409.22
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    Bimba Manufacturing Company D-23861

    U-CUP .531 ID BUNA, METRIC BASIC TWIN BORE
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    RS D-23861 Bulk 5 Weeks 1
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    Bimba Manufacturing Company D-23862

    U-CUP .75 ID BUNA, METRIC BASIC TWIN BORE
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    RS D-23862 Bulk 5 Weeks 1
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    Bimba Manufacturing Company D-23860

    U-CUP .315 ID BUNA, METRIC BASIC TWIN BORE
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    RS D-23860 Bulk 5 Weeks 1
    • 1 $2.03
    • 10 $1.89
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    D2386 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D2386

    Abstract: D2386 TOSHIBA 2SB1557 2SD2386
    Contextual Info: D2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SD2386 2SB1557 2-16C1A D2386 D2386 TOSHIBA 2SB1557 2SD2386 PDF

    D2386

    Abstract: 2SB1557 2SD2386
    Contextual Info: D2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor D2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics Symbol


    Original     		2SD2386 2SB1557 2-16C1A D2386 2SB1557 2SD2386 PDF

    D2386 TOSHIBA

    Contextual Info: D2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557 Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SD2386 2SB1557 2-16C1A D2386 TOSHIBA PDF