2SB67 Search Results

2SB67 Datasheets (160)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SB67	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	38.71KB	1
2SB67	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	109.3KB	2
2SB67	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	34.99KB	1
2SB67	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	89.84KB	1
2SB67	Unknown	Vintage Transistor Datasheets	Scan	PDF	47.45KB	1
2SB67	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	93.57KB	1
2SB67	Unknown	Discontinued Transistor Data Book 1975	Scan	PDF	170.6KB	2
2SB67	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.43KB	1
2SB67	Unknown	Cross Reference Datasheet	Scan	PDF	34.22KB	1
2SB670	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	139.25KB	1
2SB670	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	43.73KB	1
2SB670	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	75.46KB	1
2SB670	Unknown	Cross Reference Datasheet	Scan	PDF	39.51KB	1
2SB670A	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	139.25KB	1

2SB670A	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	43.73KB	1
2SB670A	Unknown	Cross Reference Datasheet	Scan	PDF	39.51KB	1
2SB670H	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	153.56KB	1
2SB671	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	139.25KB	1
2SB671	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	43.73KB	1
2SB671	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	75.46KB	1

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2SB67 Price and Stock

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Toshiba America Electronic Components


Toshiba America Electronic Components 2SB673 POWER BIPOLAR TRANSISTOR, 7A I(C), 100V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-220AB, PLASTIC/EPOXY, 3 PIN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SB673		95			1 $9.00 10 $4.50 100 $3.90 1000 $3.90 10000 $3.90	Buy Now
Toshiba America Electronic Components 2SB676 TRANSISTOR,BJT,DARLINGTON,PNP,80V V(BR)CEO,4A I(C),TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SB676		5			1 $2.25 10 $2.07 100 $2.07 1000 $2.07 10000 $2.07	Buy Now

2SB67 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SD633 Abstract: 2sb673 2SD635 Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 • DESCRIPTION ·With TO-220C package ·Complement to type 2SB673/675 ·DARLINGTON ·High DC current gain ·Low saturation voltage APPLICATIONS ·High power switching	Original	2sd633 2sd635 o-220c 2sb673/675 +12sb673	PDF
2SD686 Abstract: 2SB676 Contextual Info: Inchange Semiconductor Product Specification 2SD686 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB676 ・DARLINGTON ・High DC current gain APPLICATIONS ・Switching applications ・Hammer drive,pulse motor drive	Original	2sd686 o-220c 2sb676	PDF
2SC1079 Abstract: 2SB679 transistor 2SC1079 Audio Output Transistor Amplifier Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB679 DESCRIPTION •High Power Dissipation: PC= 100W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications.	Original	2sb679 -120v 2sc1079 -10ma +2transistor 2sc1079 audio output transistor amplifier	PDF
2SD633 Abstract: 2SD635 2SB673 NPN POWER DARLINGTON TRANSISTORS Contextual Info: SavantIC Semiconductor Product Specification 2SD633 2SD635 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB673/675 ·DARLINGTON ·High DC current gain ·Low saturation voltage APPLICATIONS ·High power switching ·Hammer drive,pulse motor drive	Original	2sd633 2sd635 o-220c 2sb673/675 +22sb673 npn power darlington transistors	PDF
2SB675 Abstract: 2SD635 Contextual Info: SavantIC Semiconductor Product Specification 2SB675 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD635 APPLICATIONS ·High power switching applications	Original	2sb675 o-220c 2sd635 -14ma	PDF
2SB673 Abstract: 2SD633 rl15a Contextual Info: SavantIC Semiconductor Product Specification 2SB673 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD633 APPLICATIONS ·High power switching applications	Original	2sb673 o-220c 2sd633 -14ma +2-100v rl15a	PDF
RL15A Abstract: 2SD634 2SB674 Contextual Info: SavantIC Semiconductor Product Specification 2SB674 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD634 APPLICATIONS ·High power switching applications	Original	2sb674 o-220c 2sd634 -14ma +1rl15a	PDF
2SD689 Abstract: AC75 Contextual Info: TOSHIBA -CDISCRETE/OPTOJ DeTJ TCH72SD 0DD?3Mb 2 ✓' 9097250 TOSHIBA 56C DI S C R E T E / O P T Ò T T-33-31 07 3 4 6 S IL IC O N PNP T R IP L E D IF F U S E D TYPE _ ( D A R L IN G T O N POWER _ 2SB679 INDUSTRIAL APPLICATIONS _ LOW FREQUENCY MEDIUM POWER AMPLIFIER AND	OCR Scan	tch72sd t-33-31 2sd689 --30v +1ac75	PDF
2SB673 Abstract: 2SB674 2sb675 Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB673,2SB674 2SB675 INDUSTRIAL APPLICATIONS U nit in mm HIGH POW ER SW ITCHING APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. 10. :^MA X • • • 03.610.3 High DC Current Gain : hFE = 2000 (Min.) (V c e = -3 V , I c = -3 A )	OCR Scan	2sb673 2sb674 2sb675 2sd633 +22sd634 2sd635	PDF
2sb677 Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB677 INDUSTRIAL APPLICATIONS U nit in mm SW ITCHING APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. POW ER AMPLIFIER APPLICATIONS. 1&3MAX- 0 3 .6 1 0 .2 H igh DC C urrent Gain : hFE = 2000 (Min.) (V c e = -2 V , IC = -1 A )	OCR Scan	2sb677 100x2m	PDF
2SB1013 Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679 Contextual Info: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018	OCR Scan	2sb884 2sb679 2sb1105 2sb949 +142sb1226 2sb1402 2sb949a 2sb1131 2sa1431 2sb1117 2sb1013 2s897 2sb1315 2sa1307 2sb1306 2sb631 hitachi 2sb747 1318j	PDF
2SB1099 Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613 Contextual Info: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A	OCR Scan	2sa1706 2sb880 2sb676 2sb601 +152sb950 2sb1341 2sb886 2sb673 2sb1108 2sb1343 2sb1099 2sb615 nec 2sb1099 b676 1086a 1091 2s8834 2sb536 toshiba 2sb613	PDF
2SD686 Abstract: 2SB676 Contextual Info: SavantIC Semiconductor Product Specification 2SD686 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB676 ·DARLINGTON ·High DC current gain APPLICATIONS ·Switching applications ·Hammer drive,pulse motor drive ·Power amplifier applications	Original	2sd686 o-220c 2sb676	PDF
S1854 Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001 Contextual Info: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686	OCR Scan	2sa473 2sb553 2sa656a 2sb554 +162sa657a 2sb595 2sa658a 2sb596 2sa739 2sb673 s1854 s1854 a mp4002 mp3009 2sc3303 2sc520a 2sc519a mp4004 s2055 mp4001	PDF

2SB677 Contextual Info: SavantIC Semiconductor Product Specification 2SB677 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·High power switching applications ·Power amplifier applications	Original	2sb677 o-220c -50ma	PDF
Contextual Info: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 2SB677 INDUSTRIAL APPLICATIONS SWITCHING APPLICATIONS. Unit HAMMER DRIVE, PULSE M OTOR DRIVE APPLICATIONS. in m m 03.6±Q£ 10 .3 MAX POWER AMPL I F I E R APPLICATIONS. FEATURES: • High DC Current : hFE=2000	OCR Scan	2sb677 -55m50	PDF
2SB675 Abstract: 2SD635 Contextual Info: Inchange Semiconductor Product Specification 2SB675 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD635 APPLICATIONS ·High power switching applications	Original	2sb675 o-220c 2sd635 -14ma	PDF
2Sb674 Abstract: 2SD634 Contextual Info: Inchange Semiconductor Product Specification 2SB674 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SD634 APPLICATIONS ·High power switching applications	Original	2sb674 o-220c 2sd634 -14ma	PDF
2SB679 Abstract: 2SC1079 transistor 2SC1079 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB679 DESCRIPTION •High Power Dissipation: PC= 100W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min.) ·Complement to Type 2SC1079 APPLICATIONS ·Designed for audio power amplifier applications.	Original	2sb679 -120v 2sc1079 -10ma +1transistor 2sc1079	PDF
2SB676 Contextual Info: SavantIC Semiconductor Product Specification 2SB676 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A Min. ·DARLINGTON APPLICATIONS ·For switching applications ·Hammer drive, pulse motor drive applications	Original	2sb676 o-220c -10ma -100v	PDF
Contextual Info: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 2SB676 INDUSTRIAL APPLICATIONS Unit in mm SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. w POWER AMPLIFIER APPLICATIONS. FEATURES : • High DC Current Gain ,03.61:0.2 : hFE=2000 (Min.) (VCE=-2V, IC=-1A)	OCR Scan	2sb676 -55vl50 1x0-25 20/is	PDF
2SD2449 Abstract: 2SD1509 2SD1410 2S01088 2SC982TM 2SD2088(F) 2sd799 Contextual Info: Darlington Transistors F1 W c E O 30V 50V 60V 80V 100V 160V 250V 300V 400V 450V 2SC982TM 0.3A 1.SA 40V 2SD1140 2SD1224 2SD1508 2SD1631 2SD2481 2SB1067 2SD1658 2A 2SD1509 2SD2088 2SD2208 2SB1411 2SD2206 2SB1457 2SB1617 2SD2480 2SB677 2SD687 3A 4A SA 2SD2129	OCR Scan	2sc982tm 2sd1140 2sd1224 2sd1508 +122sd1631 2sd2481 2sb677 2sd687 2sb907 2sd1222 2sd2449 2sd1509 2sd1410 2s01088 2sd2088(f 2sd799	PDF
2sb676 Abstract: ic darlington Contextual Info: Inchange Semiconductor Product Specification 2SB676 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A Min. ・DARLINGTON APPLICATIONS ・For switching applications ・Hammer drive, pulse motor drive applications	Original	2sb676 o-220c -100v ic darlington	PDF
2SB676 Abstract: RL102 Contextual Info: JMnic Product Specification 2SB676 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A Min. ・DARLINGTON APPLICATIONS ・For switching applications ・Hammer drive, pulse motor drive applications	Original	2sb676 o-220c -10ma -100v +1rl102	PDF

2SB67 Search Results

2SB67 Datasheets (160)

2SB67 Price and Stock

Toshiba America Electronic Components 2SB673

Toshiba America Electronic Components 2SB676

2SB67 Datasheets Context Search

2SD633

2SD686

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RL15A

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2SB1013

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S1854

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2SB676