TCH72SD Search Results

2SD689

Abstract: AC75
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ DeTJ TCH72SD 0DD?3Mb 2 ✓' 9097250 TOSHIBA 56C DI S C R E T E / O P T Ò T T-33-31 07 3 4 6 S IL IC O N PNP T R IP L E D IF F U S E D TYPE _ ( D A R L IN G T O N POWER _ 2SB679 INDUSTRIAL APPLICATIONS _ LOW FREQUENCY MEDIUM POWER AMPLIFIER AND

2SC1553

Abstract: 2SC1553A 2sc15 scjti SC1553 nf1sd S211
Contextual Info: TOSHIBA BT OISCRETE/OPTOJ D E ~ | ‘iD Î T E S 0 D 0 G 0 4 B 1 9 0 9 7 2 5 0 T O S H I B A D I S C R E T E /O P T O 39C 00431 _ •_ T - O U H F Band L o v N o i a e A m p l i f i e r A p p l i c a t i o n s

TLRC281

Contextual Info: Ga A i As RED LIGHT EMITTER TLRC281 TLRC281 LED FOR PLASTIC FIBER • • • Luminous spectra are suited to plastic fiber. : Ap = 660nm (TYP) High coupling efficiency with fiber : Pf= —8.5dBm(TYP) High speed application is possible. : fc = 7MHz(TYP) PIN CONNECTION

Contextual Info: JS8835-AS FEATURES: • ■ HIGH p1dB = HIGH Gfdg “ POWER 24 dBm at f = 8 GHz GAIN 8 dB st f = 8 GHz ■ SUITABLE FOR C-BAND ■ ION IMPLANTATION ■ CHIP FORM AMPLIFIER RF P E R F O R M A N C E S P E C I F I C A T I O N S Ta = 2 5 ° C JS 8835-A S TYPE NUMBER

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-4L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz