100X2M Search Results

Contextual Info: Power T ransistors 2SB1156 2SB1156 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD 1707 • Features • Low collector-eimitter saturation voltage VcEtsao • Good linearity of DC current gain (hFE) • High collector current (Ic)

S216S02

Abstract: 116S01 S112S02 S216S0 S60C
Contextual Info: SHARP S112S01 Series/S 116S01 Series S112S01 Series S116S01 Series SIP Type SSR for Medhim Power Control • Features ■ O ullne Dimensions 1. Com pact, high radiation resin m old package 2. RMS O N -state current S112S01 Series •' 12Arms at Tc^70°C W ith heat sink

LHi 878

Abstract: 2SD1169 2SD1168 2SD1171 10raA PCT-A11 IB07
Contextual Info: P A N A S O N I C INDL/ELEK-CSEnil b^aflSM 7EC D DQCH51D □ | 2SD1168 2 SD 1 1 6 8 T- 3 3 - '> ij =3 > NPN H fiÌÉ i& ./lfìfé /S i NPN Triple Diffused Mesa 7- -f "j •?• > i f ^ =¥ a. U —2 /S w itc h in g Regulator U n it : ir 39 .0 ± 0 .5 • ¥f

251C

Abstract: 2SB1372 2SD2065
Contextual Info: P o w e r T ra n s is to rs — 2SD2065 b q 3 2 flS4 o o n a s M PAN ASO NIC mi m p n c b INDL/ELEK SEM I 2SD2065 bT E D Silicon T rip le -D iffu se d P lanar Type Package Dim ensions High Pow er Am plifier Com plem entary Pair with 2SB1372 U n it ^ mm 5.2m ax.

Contextual Info: T O SH IB A SM8G45,SM8J45,SM8G45A,SM8J45A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G45, SM8J45, SM8G45A, SM8J45A Unit in mm AC POWER CONTROL APPLICATIONS • • • • Repetitive Peak Off-State Voltage : V;q r m = 400, 600V R.M.S On-State Current

2sb677

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB677 INDUSTRIAL APPLICATIONS U nit in mm SW ITCHING APPLICATIONS. H A M M E R DRIVE, PULSE M O T O R DRIVE APPLICATIONS. POW ER AMPLIFIER APPLICATIONS. 1&3MAX- 0 3 .6 1 0 .2 H igh DC C urrent Gain : hFE = 2000 (Min.) (V c e = -2 V , IC = -1 A )

2SB1108

Abstract: 2SD1608
Contextual Info: Power Transistors 2SB1108 2SB1108 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Medium Speed Switching Complementary Pair with 2S D 1608 U nit : mm 4 4 max. ,1 0 .2 m a x. • Features 2.9max. • High DC cu rre n t gain Iife • High speed sw itching

2SD1510

Abstract: 743p 44max
Contextual Info: Power Transistors 2SD1510 2SD1510 Silicon PNP Triple-Diffused Planar Darlington Type Package Dim ensions Power A m plifier U n it r m m 4 .4 m a x . • Features • High DC cu rren t gain hra 2.9max • High speed switching • “Full P ack” package for simplified m ounting on a h eat sink with one

2SC3910

Contextual Info: Power Transistors 2SC3910 2SC3910 Silicon N PN Triple-D iffused Junction M esa Type Package D im ensions High Speed S w itching • Features U n it ! mm 5.3max. 20.5m ax. 3.0- • H ig h s p e e d s w itc h in g • H ig h c o lle c to r - b a s e v o lta g e V CBo

Contextual Info: Power Transistors 2SC3972, 2SC3972Á 2SC3972, 2SC3972A Silicon NPN Triple-Diffused Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching U nit ! mm • Features • High' speed switching • High collector-base voltage 4.4max. 10.2max.

SF5J41

Abstract: TOSHIBA THYRISTOR
Contextual Info: TOSHIBA SF5G41 A,SF5J41 A TO SHIBA THYRISTOR SILICON DIFFUSED TYPE Unit in mm M E D IU M POWER CONTROL APPLICATIONS • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current • • 10.3 MAX. V d rm \ _ 400^ 600V

2SD369

Abstract: IC 200 UDR 005 2SD369-Y 100W AUDIO ic AMPLIFIER 251C 2SD369-0 Sink15 2SD369O
Contextual Info: 2SD SILICON NPN DIFFUSED JUNCTION TRANSISTOR I il I f ffl o ±n,t> * 4 o D C - D C V >'< - * m o INDUSTRIAL APPLICATIONS Unit in m m - * m A u dio 369 Itower A m p l i f i e r , Power S w i t c h i n g DC-DC C o n v e r t e r and R e g u l a t o r A p p l i c a t i o n s .

Contextual Info: Power Transistors 2SB1252 2SB1252 Silicon PNP Epitaxial Planar Darlington Type • Package Dimensions U n i t : mm Power Amplifier Complementary Pair with 2SD1872 ■Features 4 .4 m a x . 1 0 .2 m a x . 5 .7 m a x . 2 .9 m a x • O p tim u m fo r 35W hi-fi o u tp u t

2SB947

Abstract: 2SB947A
Contextual Info: Power T ransistors 2SB947, 2SB947A 2SB 947, 2S B 947A Silicon PNP Epitaxial Planar Type P ackage Dim ensions Low Voltage Switching • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e VcEcsao • H igh s p e e d sw itch in g • “F ull P a c k ” p ack ag e fo r sim plified m o u n tin g on a h e a t sink w ith one

2SD1663

Contextual Info: Pow er Tra n sisto rs 2 SD1663 2S D 1663 Silicon N P N Trip le-D iffu sed Ju n ctio n M esa Type P ackage D im ensions P ow e r S w itch ing • Fe a tu re s • H igh b re a k d o w n v o ltag e and high reliab ility by a g la ss p assiv atio n • H igh s p e e d sw itch in g

2SD1173

Abstract: 2SD1172 2SD1174
Contextual Info: PANASONIC I N D L / E L E K - C S E M I} 72C I>J j bJ13Sfl5M □DQ'JSlt, 1 "T -33-11 2SD1172 v ’ 3 U =1 > NPN M • i# NPN Triple Diffused Junction Mesa [°J HJ il ffl/Line-O perated Horizontal Deflection Output Unit r mm 39.0 ± 0 .5 ^ [/F e a tu re s

Contextual Info: SILICON PN P EPITAXIAL T Y P E PC T P R O C ESS 2 S A 1 1 2 INDUSTRIAL APPLICATIONS U nit in mm HIGH CURRENT SWITCHING APPLICATIONS. lCLSM AX^ 0 3 . 6 ± d Z • Low Collector Saturation Voltage • • High Speed Switching Time : tstg = 1 .0 //s (Typ.)

2SD1273

Abstract: 2SB1299 B13 transistors
Contextual Info: 2SB1299 Power Transistors 2SB1299 Silicon PNP Epitaxial Planar Type P ackage Dim ensions Pow er Am plifier C om plem entary Pair with 2 S D 1 2 7 3 . Unit : i 4 4max. max. 5.7max. 10.2 • Features 2.9m«x • High DC current gain K f e • Good linearity of DC current gain (I i f e )

2SB943

Abstract: 2SD1268 2SB941 P p 181 V
Contextual Info: Power Transistors 2SB943 2SB943 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD 1268 • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e VcE<sao • G ood lin e a rity of D C c u r r e n t gain (Iife )

2SC3528

Contextual Info: Power Transistors 2SC3528 2SC3528 Silicon PNP Triple-Diffused Planar Type . Package Dimensions High Breakdown Voltage, High Speed Switching Unit ! mm • Features 5.2n>ax. 15.5max. 6.9min. • L o w c o lle c to r-e m itte r s a tu ra tio n v o lta g e V ce <aat>

800V PNP

Abstract: 2SC3507 2SC3577
Contextual Info: Power Transistors 2SG3577 bR3SaSE OOlbMSl 3b3 2SC3577 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • • • • High speed switching High collector-base voltage Vcbo Good linearity of DC current gain (Iife)

Contextual Info: Power Transistors 2S D 17 3 0 2SD1730 Silicon PNP Triple-Diffused Planar Type Package Dim ensions H orizontal Deflection Output 15:5max. • Features 13.5max. • Damper diode built-in ll.Omax. • Minimizes external component counts and simplifies circuitry

Contextual Info: TOSHIBA SF8G41 A,SF8J41 A TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF8G41A, SF8J41A Unit in mm MEDIUM POWER CONTROL APPLICATIONS • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current • • W- V d r m \ _ 400^ 600V

Contextual Info: Power Transistors 2SB11G8 2SB1108 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Medium Speed Switching Complementary Pair with 2SD1608 U n it : 4 4 max. 10.2max. • Features !,9max. • High DC c u rre n t gain hFE • High speed switching