2SB1156 Search Results

251C

Abstract: 2SB1156 2SD1707
Contextual Info: Power Transistors 2SB1156 2SB1156 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2S D 1707 U nit : ram 5 2 max. . 15.5max- • Features ' 6.9m in. "U.2 • Low collector-eim itter saturation voltage VcEisao • Good linearity of DC c u rre n t gain (hFE)

2SB1156

Abstract: 2SD1707
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1156 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ IC= -8A ·Complement to Type 2SD1707

Contextual Info: Power T ransistors 2SB1156 2SB1156 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD 1707 • Features • Low collector-eimitter saturation voltage VcEtsao • Good linearity of DC current gain (hFE) • High collector current (Ic)

2SD1707

Contextual Info: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE

Contextual Info: Power Transistors 2SD1707 2SD1707 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SB1156 Unit ! mm 5.2max. 1 /3 .2 15.5max. • Features 6.9mm. o "I • Low c o lle c to r -e m itte r satu ratio n v o lta g e VcE<sat>

2sd1707

Abstract: 2SB1156
Contextual Info: Inchange Semiconductor Product Specification 2SB1156 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1707 ・Low collector saturation voltage ・Large collector current APPLICATIONS ・For power switching applications

2SB1156

Abstract: 2SD1707
Contextual Info: Power Transistors 2SB1156 Silicon PNP epitaxial planar type Unit: mm For power switching Complementary to 2SD1707 Rating Unit Collector to base voltage VCBO −130 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −7 V Peak collector current

2SB1156

Abstract: 2SD1707
Contextual Info: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Features 3.2 11.0±0.2 φ 3.2±0.1 Rating Unit Collector-base voltage (Emitter open) VCBO 130 V Collector-emitter voltage (Base open)

2SD1707

Abstract: 2SB1156
Contextual Info: JMnic Product Specification 2SB1156 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1707 ・Low collector saturation voltage ・Large collector current APPLICATIONS ・For power switching applications PINNING

2sd1707

Abstract: 2SB1156
Contextual Info: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE

2SB1156

Abstract: 2SD1707
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features

2SB1156

Abstract: 2SD1707
Contextual Info: Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open)

Vbe 8 V

Abstract: ic shelf life low Vce sat PNP transistor 200ma pnp 2SB1156 2SD1707
Contextual Info: Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

PT10V

Abstract: 2SB1156 2SD1707
Contextual Info: Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm • Features ● ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage

2SB1156

Abstract: 2SD1707
Contextual Info: Power Transistors 2SB1156 Silicon PNP epitaxial planar type Unit: mm For power switching Complementary to 2SD1707 Rating Unit Collector to base voltage VCBO −130 V Collector to emitter voltage VCEO −80 V Emitter to base voltage VEBO −7 V Peak collector current

2SB1156

Abstract: 2SD1707
Contextual Info: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Absolute Maximum Ratings TC = 25°C φ 3.2±0.1 15.0±0.2 • Low collector to emitter saturation voltage VCE sat • Satisfactory linearity of forward current transfer ratio hFE

2SB1156

Abstract: 2SD1707
Contextual Info: Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 • Absolute Maximum Ratings TC = 25°C 15.0±0.2 φ 3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 Parameter Symbol Rating Unit

2sd1707

Abstract: 2SB1156
Contextual Info: SavantIC Semiconductor Product Specification 2SB1156 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD1707 ·Low collector saturation voltage ·Large collector current APPLICATIONS ·For power switching applications

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 (0.7) 15.0±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features

2SB1156

Abstract: 2SD1707
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1707 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1156 5.0±0.2 (0.7) 15.0±0.3 (3.2) Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and