2N706 TRANSISTOR Search Results

2N706 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
54F151/BEA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA)	PDF

2N706 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2n706 transistor Abstract: 2N706 transistor 2n706 transistor #2N706 Contextual Info: 4 ^ Nicht für Neuentwicklungen Not for new developments 2N706 'W Silizium-NPN-Epitaxial-Planar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: Schnelle Schalter Applications: Fast switches Abmessungen in mm Dimensions in mm	OCR Scan	2n706 2n706 transistor transistor 2n706 transistor #2n706	PDF
ILS 404 CB Abstract: 2n706 transistor transistor array K1 marking 3001 8AT transistor 2n706 Contextual Info: MIL-S-19500/120C 15 April iyTO SUPERSEDING MIL-S-19500/120B 26 June 1063 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, LCW-PCWER TYPE 2N706 This specification Is mandatory fo r use by all De^ partm ents and Agencies of the Department of Defense.	OCR Scan	mil-s-19500/120c mil-s-19500/120b 2n706 mil-s-19500 +5ils 404 cb 2n706 transistor transistor array k1 marking 3001 8at transistor 2n706	PDF
2n706 transistor Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718 Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l	OCR Scan	t0206aa 2n706 2n708 2n718 +122n718aa 2n720a 2n930a 2n2221 2n2221aa 2n2222 2n706 transistor transistor 2n706 2n2222aa 2n2222 jan 03150 transistor transistor 2n2222	PDF
2n4276 Contextual Info: N PN Transistors saturated switches Type No Case Sty •• V CIIO V, M,n V CEO 2N706 TO•18 25 15 2N708 TO·18 40 15 20 12 2N744 TO·18 2N753 TO·18 25 2NB34 TO·18 40 2N2369 TO·18 40 15 2N2369A TO·18 40 15 JAN2N2369A TO·18 40 15 JANTX2N2369A TO·18 40	Original	2n706 2n708 2n744 2n753 +72nb34 2n2369 2n2369a jan2n2369a 10ija mps2714 2n4276	PDF
2n3052 Abstract: 2n706 transistor 2N744 2n708 Transistor 2N708 Contextual Info: TYPE 2N3052 DUAL N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -S 6 7 4 2 3 6 , A U G U S T 1 9 6 3 - R E V I S E D A P R IL Î 9 6 7 DESIGNED FOR MINIATURIZED APPLICATIONS REQUIRING DEVICES SIMILAR TO 2N706, 2N708, 2N744, 2N753, 2N834, 2N914, ETC. •	OCR Scan	2n3052 2n706 2n708 2n744 +52n753 2n834 2n914 2n706 transistor transistor 2n708	PDF
2N706 Abstract: 2N706A J 2N706 2N706AB 2N706B 2N706 JAN 2N2368 Contextual Info: MOTOROLA SC XSTRS/R F D \| b3b72SM OOflbait. 1 \| M A X IM U M R A T IN G S R ating Collector-Em itter V olta g e 2N 706A,B C ollector-E m itter Voltag eO C o llector-Base V olta g e Em itter-Base V olta g e 2N706 2N 706A 2N706B C o llector Current 2N706AB	OCR Scan	2n706a 2n706 2n706b 2n706ab +410vdc j 2n706 2n706 jan 2n2368	PDF
2n706 Abstract: SCHEMA 2n 706 Contextual Info: 2N 706 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILIC IU M , PLANAR - Small signal amplification A m plifica tio n p etits signaux - Low current fast switching 25 V VCBO Commutation rapide faible courant ^21E mA h Maximum power dissipation Case TO-18	OCR Scan	2n706 schema 2n 706	PDF
TI555 Abstract: tis49 TIS52 2s325 2s321 a2s303 2S512 2N914 2N2368 TI546 Contextual Info: Silicon Transistors C ase Type c o ~ a M a x im u m R a tin g s a t2 5 ° C am b. C h a ra c te ris tic s S P E C IA L P No. FEATURES » C O « o w h FE ' *T M in . V CB V CE V EB C V V V A P.O, W mA V CE(SA T A >t M ax. M in . mA M c /s Max. 'c mA	OCR Scan	2n706 2n706a 115ns 2n708 +162n743 2n744 2n753 2s3040 2s3210 2s3220 ti555 tis49 tis52 2s325 2s321 a2s303 2s512 2n914 2n2368 ti546	PDF
2N697 equivalent Abstract: 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 2N1711 DH3467CD N2904A BFY39 BFY50 equivalent Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types (Cont.) Near Equivalent Near Equivalent Polarity Pkg. Type BFX30 BFX37 BFX65 BFX84 BFX85 2 N2904A 2N2605* 2N2605* 2N1711 2N171-1 PNP PNP PNP NPN NPN TO-39 T O -18 T O -18 TO-39 TO-39 BSX45-10	OCR Scan	bfx30 n2904a bfx37 2n2605 +13bfx65 bfx84 2n1711 bfx85 2n171-1 2n697 equivalent 2n1711 equivalent 2n2219a bsx45 2n1711 motorola 2n3914 dh3467cd bfy39 bfy50 equivalent	PDF
2n706 transistor Abstract: transistor 2n706 2n2222 jan 2N706 2N706 JAN Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 ^C E O PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS @ IC/ ^ C E min/max @ mA/V hpE VcE(jat) @ It/Iß v@ mA/mA TO-18 T0206AA < i\ C<p P (MHz) ÌT 20@ 10/1 0.6@10/1 6 200 30-120@10/l 0.4@10/1 6 300	OCR Scan	t0206aa 2n706 2n708 2n718 +102n718aa 2n720a 2n930a 2n2221 2n2221aa 2n2222 2n706 transistor transistor 2n706 2n2222 jan 2n706 jan	PDF
2N502 Abstract: 2N2410 Contextual Info: TRANSISTORS—SMALL SIGNAL NPN HIGH SPEED SATURATED SWITCHING TRANSISTORS BY ASCENDING V C E 0 METAL PACKAGE (FOR MEDIUM SPEED — SEE GENERAL PURPOSE Continued V CEO V CE(sat) hFE (VCER )	OCR Scan	2n835 2n2847 2n2848 2n2476 +82n2477 2n706 2n1252 2n1253 2n2845 2n2846 2n502 2n2410	PDF
TO-39 1000 V Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military	OCR Scan	bc108 zt180 zt187 2n706a +42n706 bcy57 bsy95a to-39 1000 v	PDF
2N3914 Abstract: 2n3219 2N4260 2N3910 2n3914 equivalent 2N3913 2N697 equivalent 2N915 BFY39 BSY39 Contextual Info: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Am bient h f e @>c VCE V e B Volts Volts M in/M ax mA II Type Electrical Characteristics @ 25° C VcE (S at) @ Volts m A /m A mV — 2.0 rd@lB mA Ohms Cob mA Package pF Max 2N943 PNP	OCR Scan	2n943 t0-18 2n2004 2n2333 +162n2944 2n2945 2n2945a 2n2946 2n2946a bsy51 2n3914 2n3219 2n4260 2n3910 2n3914 equivalent 2n3913 2n697 equivalent 2n915 bfy39 bsy39	PDF
bc 301 transistor Abstract: bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56 Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A < 0 ,2 A v C E O ^ \^ PNP PNP	OCR Scan	bsx52 bsw21 bsw22 bsx51 +112n706 bc 301 transistor bc 303 transistor a2n transistor bc 170c transistor transistor bc 650 c transistor bsx 82 bc211 transistor transistor bc 313 bc211 transistor bc 56	PDF

SP3725QDB Abstract: 2N5146 2N3444 2N1711 equivalent 2N2904A MOTOROLA 2N3763 MOTOROLA 2N3252 MOTOROLA transistor 2n1711 2N3244 2N3252 Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient Pq Type Polarity One Both Side Sides mW mW VCB Volts V ce Volts V eb Volts M in/M ax Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts	OCR Scan	sp3763q0 sp3763qf o-116 sp3725qdb +13sp34g7adb bsy51 2n2218 bsy52 2n5146 2n3444 2n1711 equivalent 2n2904a motorola 2n3763 motorola 2n3252 motorola transistor 2n1711 2n3244 2n3252	PDF
bcy79 equivalent Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A	OCR Scan	bfs36 2n930 bs9365 baw63 +9bs9302 bfs36a 2n929 baw63a bcy79 equivalent 2n3053 equivalent bcy78 equivalent 2n2905a equivalent f025	PDF
BCY78 Abstract: 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 BCY59 BCY79 Contextual Info: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple ment 1000 TO-39 2N4037 2N696	OCR Scan	n3053 2n4037 2n696 2n1131 +82n697 2n1132 bfy51 bc107 bc177 bcy59 bcy78 bcy79	PDF
2n6004 Abstract: 2n4424 2N5825 2N6015 2N6000 GET2222A 2n524 2N5309 2N6006 d33025 Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p	OCR Scan	50/ia 800ma get706 get708 +15get914 get3013 get3646 ge1705 cet708 2n6004 2n4424 2n5825 2n6015 2n6000 get2222a 2n524 2n5309 2n6006 d33025	PDF
BSY39 Abstract: 2N697 equivalent 2N1420 equivalent BFY50 equivalent 2n697a 2n1613 equivalent 2N696 equivalent 2N1711 equivalent 2N1711 MOTOROLA 2N718 equivalent Contextual Info: Transistors Coni. Discrete Devices General Purpose Amplifiers E lectrical Characteristics @ 25° C M ax im um Ratings Type Polarity PD VCE VEB V o lts V o lts V o lts A m b ie n t mW V c E ( S a t ) @ I c / lß H f e >C VCB M in/M ax mA V o lts m A/m A	OCR Scan	2n497 2n498 2n656 2n657 +152n696 2n697 2n697a 2n698 bsy51 2n2218 bsy39 2n697 equivalent 2n1420 equivalent bfy50 equivalent 2n1613 equivalent 2n696 equivalent 2n1711 equivalent 2n1711 motorola 2n718 equivalent	PDF
BC140 equivalent Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA Contextual Info: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF	OCR Scan	2n721a 2n722a 2n1132a 2n1132b +152n2217 2n2218 2n2218a 500/5npn bsy51 bc140 equivalent bcy34 2n328a bcy31 bcy59 equivalent bc109 motorola bcy25 dh3725cn bc108c equivalent 2n3133 motorola	PDF
Transistor BC177 Abstract: 2N697 2N2475 audio BC108 2N1131 2N1132 2N4037 2N696 BC107 BC177 Contextual Info: NPN GENERAL PURPOSE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple ment 1000 TO-39 2N4037 2N696	OCR Scan	n3053 2n4037 2n696 2n1131 +92n697 2n1132 bfy51 bc107 bc177 bcy59 transistor bc177 2n2475 audio bc108	PDF
transistor t2a Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23 Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200	OCR Scan	bsy95a ztx310 bsv23 ztx311 +14bsv24 ztx312 bsv25 ztx313 bsv26 ztx314 transistor t2a npn transistor 2n2222a st 2n 2907a zdt- 5v bsv27 j 2n2369 ztx312 data ztx313 data	PDF
BSY55 Abstract: Scans-00107837 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88 Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military	OCR Scan	2n2219a 2n2905a 2n2222a 2n2907a +15zt181 bcy58 t0-18 bcy78 bsy51 bsy55 scans-00107837 bcy56 2n1893 2n2102 2n2405 2n4036 bfx85 zt86 zt88	PDF
Transistor BC177 Abstract: BCY42 2N1131 2N1132 2N4037 2N696 2N697 BC107 BC177 BCY59 Contextual Info: NPN G EN ER A L P U R P O SE - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA Min Max 15 50 250 V V mA 60 40 700 1 •4 150 V hFE Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 150 100 50 Package Comple ment 1000 TO-39 2N4037	OCR Scan	n3053 2n4037 2n696 2n1131 +82n697 2n1132 bfy51 bc107 bc177 bcy59 transistor bc177 bcy42	PDF

2N706 TRANSISTOR Search Results

2N706 TRANSISTOR Result Highlights (5)

2N706 TRANSISTOR Datasheets Context Search

2n706 transistor

ILS 404 CB

2n706 transistor

2n4276

2n3052

2N706

2n706

TI555

2N697 equivalent

2n706 transistor

2N502

TO-39 1000 V

2N3914

bc 301 transistor

SP3725QDB

bcy79 equivalent

BCY78

2n6004

BSY39

BC140 equivalent

Transistor BC177

transistor t2a

BSY55

Transistor BC177