BSX20 Search Results

BSX20

Abstract: BSX19 saturated switches
Contextual Info: BSX19 BSX20 SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCHES The BSX 19 and BSX 20 are silicon planar epitaxial NPN transistors in Jed ecT O -18 metal case. They are p rim arily intended fo r very high speed saturated switching applications. ABSOLUTE M A XIM U M RATINGS

BP317

Abstract: BSX20 TRANSISTOR bsx20
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BSX20 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 14 Philips Semiconductors Product specification NPN switching transistor BSX20

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbSa^l 00276^ BAPX I BSX20 _ V _ SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in TO-18 metal envelopes, primarily intended for high-speed saturated switching and

bsx20

Contextual Info: B S X 19 B S X 20 NPN SILICON PLANAR EPITAXIAL TRANSISTORS bMlÄ m: CASE T0-18 JrL THE BSX19 AND BSX20 ARE NPN 'SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR VERÏ HIGH SPEED SATURATED SWITCHING APPLICATIONS. CBE ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

BSX20

Contextual Info: BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS

Contextual Info: BSX20 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)400nØ @V(CBO) (V) (Test Condition)

Contextual Info: Æ T SGS-THOMSON n lsi S IIL[iCTISÎ iD©S BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications.

BSX20DCSM

Contextual Info: BSX20DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

BSX20

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BSX20 TO-18 APPLICATIONS High Speed Saturated Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage

P346A

Abstract: ME8003 SGS C407 BSX20 2n2222a ME9002 BFR37 sgs-ates transistors C760 P348A BSX19
Contextual Info: Micro- Electronics Semiconductors N PN Transistors NPN Switching Transistors R EFER EN C E T A B L E << o sat @ lc mA 10 10 0.25 0.25 200 10 0.35 10 40 60 10 0.5 120 150 200 10 10 10 0.25 0.25 12 40 30 25 0.25 10 1 12 20 - 50 0.3 10 BSX19 BSX20 40 40 15 20

BSX19

Abstract: BSX20 TJ-55-c
Contextual Info: BSX 19 BSX 20 NFN SILICON PIANAR EPITAXIAL TRANSISTORS fK îiM l CASE TO-18 Jr% THE BSX19 AND BSX20 ARE NFN 'SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR VERÏ HIGH SPEED SATURATED SWITCHING APPLICATIONS. CBE ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

BU102

Abstract: BDX71 40636 2N3055V BSV95 BDX73 BSX27 BU100A BD663B transistor bu102
Contextual Info: SG S-ATES Semiconductors T ran sistors-N P N N P N Switching Transistors C ode o < < o w REFERENCE T A B LE lc Range m A Is 13 13 13 BSV90 B SV 9 1 BSV92 BSV95 BSX20 13.5 15 15 50 15 1-100 10-100 1-100 10-800 1-500 B SX 2 6 B SX 2 7 BSX28 BSX30 BSX32 15

Contextual Info: Philips Semiconductors Product specification NPN switching transistor BSX20 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 15V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector, connected to case • High-speed saturated switching (and HF amplifier

Contextual Info: BSX20 M A X IM U M R A T IN G S R a tin g S ym bol V alue U n it C olle cto r-E m itte r Voltage VCEO 15 Vdc C o lle cto r-E m itte r Voltage RBE = 10 Ohms VCER 20 Vdc C ollector-Base Voltage VCBO 40 Vdc E m itter-Base Voltage CASE 22-03, STYLE 1 TO-18 (TO-206AA)

BSX20

Contextual Info: BSX20 NPN TO-18 SILICON PLANAR EPITAXIAL TRANSISTORS APPLICATIONS High Speed Saturated Switching Applications ABSOLUTE MAXIMUM RATINGS d e s c r ip t io n Collector -Base Voltage Collector -Emitter Voltage Collector -Emitter Voltage Emitter -Base Voltage

Contextual Info: B S X 19 B S X 20 S G S -T H O M S O N R!tlD EæilLI(g'iri iD(SS HIGH-SPEED SATURATED SW ITCHES D E S C R IP T IO N The BSX19 and BSX20 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for very high speed saturated

BSX20CSM

Contextual Info: BSX20CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

bsx20

Contextual Info: bb53T31 0Q134AS b • BSX19 BSX20 A ~ V - i 5 '- / 5" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes, primarily intended for high-speed saturated switching and h.f. amplifier applications. QUICK REFERENCE DATA BSX19 BSX20 v CBO

Contextual Info: BSX20CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: BSX20 MECHANICAL DATA Dimensions in mm inches NPN SILICON EPITAXIAL TRANSISTOR 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) ) ) 1 7 2 1 . . ( ( 3 2 3 . 5 4 1 2 .7 (0 .5 0 0 ) m in . 3 .

BSX20

Abstract: BSX19 amer philips epitaxial silicon planar epitaxial transistors TS1013
Contextual Info: L _ I _ • bb53T31 0015MÔÔ b m - =-N AMER P H I L I P S / D I S C R E T E OLE D Il Il BSX19 BSX20 SILICON PLANAR EPITAXIAL TRANSISTORS

BSX20

Abstract: BSX19 100MA 45 V NPN
Contextual Info: / , 'ï B S X 19 B S X 20 NPN SILICON PIANAR EPITAXIAL TRANSISTORS ISSitM i CASE TO-18 M THE BSX19 AND BSX20 ARE NPN 'SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR VERT HIGH SPEED SATURATED SWITCHING APPLICATIONS. CBE ABSOLUTE MAXIMUM RATINGS C o lle c to r - B a s e V o lta g e

BSX20

Abstract: TO206AA 206AA
Contextual Info: BSX20 MECHANICAL DATA Dimensions in mm inches NPN SILICON EPITAXIAL TRANSISTOR 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) ) ) 1 7 2 1 . . ( ( 3 2 3 . 5 4 1 2 .7 (0 .5 0 0 ) m in . 3 .

BSX20

Abstract: bsx20 01 bsx-20
Contextual Info: BSX20 Low Power Bipolar Transistors Feature: • NPN Silicon Planar Switching Transistors. Applications: • High speed saturated switching applications. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E -