BFY75 Search Results

Contextual Info: BFY75 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products

bfy75

Contextual Info: BFY75 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products

BFY75

Abstract: 250M
Contextual Info: BFY75 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products

BFW 10 fet

Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
Contextual Info: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE | bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) *C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre* max N.F. (MHz)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2n2222 fairchild

Abstract: BFR37 2N915 2n930 price P346A 2N2369 2N2369A 2N914 BC119 BSX20
Contextual Info: Fairchild Semiconductors Semicondti^Hn Silicon Small Signal Transistors NPN Silicon High Speed Saturated Switching Transistors Metal Can TO IS R EFER EN C E T A B L E For medium speed - see General Purpose Section. C H A R A C T E R IS T IC S @ 25"C M A X R A T IN G S

BFY83

Abstract: BLY48
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

BF311

Abstract: BF494 bf199 BF115 BF158 BF152 BF153 BF155 BF159 BF314 BF167
Contextual Info: RF-IF High Frequency Transistors POLA­ RITY IC mA VCE (V) max (V) IC (mA) min (MHz) 1 3 3 2.5 4 10 6 12 10 10 _ 0.5 0.5 0.3 0.5 . 10 10 10 10 230+ 600 300 400 700+ 0.8* 1.2 1.2 0.4+* 1.2* 3.5+ 9 3.5 4 3 4 7 2 10 10 10 10 10 10 10 10 - 700+ 400 300+ 350

BFX36

Abstract: 110H BFX81 BFY64 BFY84 BFT53 BFT54 BFT57 BFT58 BFT59
Contextual Info: Ô133107 4ÔE D G0G0451 SEMELABI 33S ISMLB SEMELAB LTD BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code BFTW REQ REQ REQ HE HE HE HR HE HR HR HE HE HR HE HE EEQ REQ REQ HR HR REQ EEQ KEQ CECC HR KEQ EEQ EEQ EEQ EEQ REQ HE HR HK HE

P346A

Abstract: ME8003 SGS C407 BSX20 2n2222a ME9002 BFR37 sgs-ates transistors C760 P348A BSX19
Contextual Info: Micro- Electronics Semiconductors N PN Transistors NPN Switching Transistors R EFER EN C E T A B L E << o sat @ lc mA 10 10 0.25 0.25 200 10 0.35 10 40 60 10 0.5 120 150 200 10 10 10 0.25 0.25 12 40 30 25 0.25 10 1 12 20 - 50 0.3 10 BSX19 BSX20 40 40 15 20

MPS6539

Abstract: BF224 BF369 bf 182 bf310
Contextual Info: RF-IF High Frequency Transistors M A X IM U M R A T IN G S TY PE NO. PO LA ­ R IT Y CASE m W (raA ) VcEO vv CBO* (V ) Pd Ic H FE ^CE(sat) m in m ax Ic (m A ) ^CE (V ) fT C 0b r* * '-'re N .F . m ax (p F ) m ax (d B ) (V ) (m A ) m in (M H z ) 0.3 0.95

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

2n2222 itt

Abstract: 2N708 2n2388 P348A BSY87 14093 2n930 price bsy90 34313D ITT 2N1711
Contextual Info: ITT Sem iconductors NPN Transistors NPN Silicon General Purpose Amplifiers and Switches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800mW @ 25'C. Outline Drawing No. 66 applies. R E FE R E N C E T A B L E Characteristics @ Max. rating« BSY51

P348A

Abstract: BFR37 SGS transistor C740 sgs-ates BFY75 2n2388 19142e C720 2N2219 transistor BFW68
Contextual Info: S G S -A T E S Semiconductors Transistors -N P N NPN Small Signal Transistors— continued REFERENCE TABLE Max P tot @ T ams—25*C LVceo lc Range @ lc Max mA (mA) NF (dB) Code (W) (V) h FE — BFR37 0.25 80-250 10 30 0.5-50 10 5Í8 750 BFW68 0.36 40 01-50

bf311

Abstract: BF494 BF253 BF595 BF200 transistor BF271 BF115 BF153 BF158 BF184
Contextual Info: TYPE NO. P O L A R IT Y RF-1F High Frequency Transistors M A X IM U M R A T IN G S Pd ImWI 'c Im A V C EO V ) fT min Cob Cre« max max (MHz) (pF) (dB) 230+ 600 300 400 700+ 0.8 • 1.2 1.2 0.4+ • 1.2 • 3.5+ — — 9 3.5 700+ 400 300+ 350 675+ 1.2 •

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

BC117

Abstract: T0105 BFR37 C111E 2N2368 2n2388 BFR37 SGS 2N5831 2n918 plastic SGS-ATES
Contextual Info: Sem iconductors Fairchild Sem iconductors Silicon Small Signal Transistors N P N H igh Voltage Amplifier Transistors P la s t ic P a c k a g e T 0 9 2 , T 0 1 0 5 REFERENCE T A B L E C H A R A C T E R I S T IC S @ 25‘C M A X R A T IN G S C ode V CEO Volts

BF689

Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36
Contextual Info: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK