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    2N6488 MOTOROLA

    Abstract: 2N6491 MOTOROLA 1N5825 2N6487 2N6488 2N6490 2N6491 MSD6100
    Contextual Info: MOTOROLA Order this document by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488* PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes —


    Original     		2N6487/D 2N6487 2N6488* 2N6490 2N6491* 2N6487, 2N6488, 2N6491 220AB 2N6488 MOTOROLA 2N6491 MOTOROLA 1N5825 2N6487 2N6488 2N6490 2N6491 MSD6100 PDF

    2N6488 MOTOROLA

    Abstract: 2N6487 1N5825 2N6488 2N6490 2N6491 MSD6100
    Contextual Info: MOTOROLA Order this document by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488 * PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes —


    Original     		2N6487/D 2N6487 2N6488 2N6490 2N6491* 2N6487, 2N6488, 2N6491 220AB 2N6488 MOTOROLA 2N6487 1N5825 2N6488 2N6490 2N6491 MSD6100 PDF

    2SB631

    Abstract: equivalent 2n6488 BU108 2SA1046 2SC2233 2N6488 MOTOROLA Motorola 3-351 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488* PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes — hFE = 20 – 150 @ IC = 5.0 Adc


    Original     		2N6487, 2N6490 2N6488, 2N6491 220AB 2N6487 2N6488* 2N6491* TIP73B 2SB631 equivalent 2n6488 BU108 2SA1046 2SC2233 2N6488 MOTOROLA Motorola 3-351 BU326 BU100 PDF

    2N6488 MOTOROLA

    Abstract: 2N6486 2N6486 MOTOROLA 2n6488 2n6487
    Contextual Info: MOTOROLA SC XSTRS/R F 1SE d I b 3b7SS4 GDfl4fci5E fi | MOTOROLA SEMICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS hpE = 2 0 - 1 5 0 @ lc = 5.0 Adc = 5.0 Min @ l c = 15 Adc VCEO (sus) = 40 Vdc (Min) - 2 N 6486, 2N 6489 = 60 Vdc (Min) - 2N6487, 2N 6490


    OCR Scan     		2N6486 2N6487 2N6488 2N6489 2N6490 2N6491 2N6487, 2N6486, 2N6488 MOTOROLA 2N6486 MOTOROLA 2n6488 PDF

    4902N

    Abstract: 2N64
    Contextual Info: MOTOROLA Order this document by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N 64 87 Com plem entary Silicon Plastic Power Transistors 2 N6 4 8 8 * PNP . . . designed for use in general-purpose amplifier and switching applications. • • • • 2 N 6 4 90


    OCR Scan     		2N6487/D 2N6487, 2N6490 2N6488, 2N6491 -220A 21A-06 O-220AB 4902N 2N64 PDF

    2N6488 MOTOROLA

    Abstract: 1N5825 221A-06 2N6487 2N6488 2N6490 2N6491 2N6497 MSD6100 ISS-20
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon P lastic Power Transistors 2N 6488* PNP . . . designed for use in general-purpose amplifier and switching applications. 2N 6490 2 N6491* • DC Current Gain Specified to 15 Amperes —


    OCR Scan     		2N6487 2N6490 2N6488 2N6491 O-220AB 2N6490 2N6491 2N6488 MOTOROLA 1N5825 221A-06 2N6497 MSD6100 ISS-20 PDF

    2N6488 MOTOROLA

    Abstract: 2N6488 power amplifier circuit 2N0491 2N8487 2N6487 2N0490
    Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon Plastic Power Transistors 2N 6488* PNP . . designed for use in general-purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes — hpE = 20-150 @ lc » 5.0 Adc


    OCR Scan     		2N6487 2N6490 2N6488 2N6491 T0-220AB 2N6490 2N6487, 2N6488 MOTOROLA 2N6488 power amplifier circuit 2N0491 2N8487 2N0490 PDF

    2N3055 MOTOROLA

    Abstract: MJ2953 MJ2950 MJE34 pnp MJ2954 mjE34 2N5983 MJ2951 MJE34 power transistor 2N5876
    Contextual Info: 34 MOT O RO LA SC -CDIODES/OPTO} 6367255 MOTOROLA SC D ^ | b 3 b ? a S S 0Q37TS3 Q | ~ D IO D E S /O P T O 34C 37953 SILICON POWER TRANSISTOR DICE (continued) 2C6488 PNP ~01 2C6491 / DIE NO. — NPN LINE SOURCE — PL500.E228 NPN ”^ - 3 3 D DIE NO. — PNP


    OCR Scan     		0Q37TS3 PL500 2C6488 2N3055 2N4347 2N5983 2NS984 2N5985 2N6486 2N6487 2N3055 MOTOROLA MJ2953 MJ2950 MJE34 pnp MJ2954 mjE34 MJ2951 MJE34 power transistor 2N5876 PDF

    BUS36

    Abstract: D45VH4 BUS37 ccont D44VH7 MJ10047 2N6486 bdw41 D44VH1 D45VH1
    Contextual Info: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-220AB Package (continued) Resistive Switching ¡cCont VcEO (sus) Amps Max Volts Min 12 15 Device Type PNP NPN ts ti @ le MS MS @ le fT MHz P d (Case) hpE Min/Max Amp Max Max Amp Min @ 25°C Watts 90 BUV26


    OCR Scan     		O-220AB BUV26 BUV27 BUS36 BUS37 MJE13008 MJE13009 D44VH1 D45VH1 2N6486 BUS36 D45VH4 BUS37 ccont D44VH7 MJ10047 bdw41 PDF

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes PDF

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 PDF

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 PDF

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar PDF

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 PDF

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator PDF

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1 PDF

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


    Original     		MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 PDF

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


    Original     		TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100 PDF

    MJ11017 equivalent

    Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types


    Original     		MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T PDF

    BU108

    Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A


    Original     		BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277 PDF

    pin configuration transistor bd140

    Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139


    Original     		BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 PDF

    BU108

    Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:


    Original     		BU522B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773 PDF

    tip122 tip127 audio amp

    Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power


    Original     		MJ3281A MJ1302A MJ3281A* MJ1302A* 204AA TIP73B TIP74 TIP74A TIP74B TIP75 tip122 tip127 audio amp BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100 PDF

    Motorola transistor 388 TO-204AA

    Abstract: 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6030 thru 2N6031 See 2N5630 Plastic Darlington Complementary Silicon Power Transistors PNP 2N6035 . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —


    Original     		2N6030 2N6031 2N5630) 2N6035, 2N6038 2N6036, 2N6039 225AA 2N6035 2N6036* Motorola transistor 388 TO-204AA 714 ic BC 458 2SC124 BU108 BU326 2SA1046 2SC7 BDX54 2SD214 PDF