2SD612
Abstract: 2SD612K
Contextual Info: Inchange Semiconductor Product Specification 2SD612 2SD612K Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB632/632K ·High collector dissipation ·Wide area of safe operation APPLICATIONS ·25V/35V, 2A low-frequency power
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2sd6122sd612ko-1262sb632/632k+25v/35v500ma
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2SD612
Abstract: 2SD612K
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K DESCRIPTION •With TO-126 package ·Complement to type 2SB632/632K ·High collector dissipation ·Wide area of safe operation APPLICATIONS ·25V/35V, 2A low-frequency power
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2sd6122sd612ko-1262sb632/632k+25v/35v500ma
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D612K
Abstract: D612 transistor B632K transistor b632k TRANSISTOR D612 D612 k 2SB632 D612 2SB632K d612k to126
Contextual Info: Ordering number:341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features Package Dimensions • High collector dissipation and wide ASO. unit:mm 2009B [2SB632, 632K/2SD612, 612K]
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2sb632632k/2sd6125v/35v2009b+10o-1262sb632kd612kd612 transistorb632ktransistor b632ktransistor d612d612 kd612d612k to126
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2SC1565
Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
Contextual Info: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207
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2sd11962sd6332sd16342sd2024+141377k2sd10242sd6002sc4952sc1212a2sd9462sc15652sd13922sc34692sd14312sc28242sd13882sd18762sd1499
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2sb11862sb1186a2sa13042sa1306+162sa13052sb12742sb10152sb11332sb12872sb1185rtip144crtin141crtin141s2sd947 equivalent2sd612kequivalent of transistor 2sa1115rtin241crtip2412sd880 equivalentrtin140c
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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t0220mlto-32-0702sa1678fc102+72sc44492sa14162sj1932sk2832sc4106 application notes2sc3383fc124
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2SB641 r
Abstract: 2sb641 2SD659 2SD689 2SB603 2sb678 2SB647B 2SB646A 2SB646 2SB686
Contextual Info: - 56 - Ta=25‘ C , * E P f i T c = 2 5 eC m £ % 2SB603 B M HV LS SW 2SB605 B M V cB O VcEO (V) (V) ic (D O (A) -500 -500 -0. 5 L F PA -60 -50 -0. 7 LF A -30 -2 5 -1 LF A -60 -5 0 -1 2SB624 fö T B iS LF A -30 -25 2SB631 H # IF PA/MS SW -100 2SB631K H #
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2sb6032sb6052sb6212sb621a+152sb6242sb631-0b6482sd668ao-1262sb648a2sb641 r2sb6412sd6592sd6892sb6782sb647b2sb646a2sb6462sb686
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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2sc536
Abstract: B632K d612k 2sc1175 8Q transistor d612 2SB632 2SB632K 341G 2SB6
Contextual Info: Ordering' number; EN341G 2SB632.632K/2SD612.612K N 0 .3 4 IG PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i 25V/35V, 2A Low-Frequency Power Amp Applications F eatures • High collector dissipation and wide ASO. : 2SB632,632K A b solu te M axim um R atings at Ta = 25°C
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en341g2sb632632k/2sd6125v/35v+102sb632kd612k10haje2sc536b632k2sc11758q transistord612341g2sb6
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NEC 824A
Abstract: NEC D 809 2SD811 TOSHIBA NEC D 809 k nec k 813 25c3325 2sc2233 2SB837 2sc1741 2SD683A
Contextual Info: - Z tt S € Type No. Manuf. 2SD 792 o ' fâ T 2SD 793 h m 2SD 794 h m 2SD 795 _ 0 a 2SD 796 s±mm 2SD 798 M M 2SD 800 2SD 801 2SD 802 2SD 803 2SD 804 ^ 2SD 806 2SD 807 », 2SD 808 2SD 809 2SD 809 1 2SD 810 - 2SD 813 2SD 814 ^ 2SD 816 S S TOSHIBA m NEC 2SD330
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2sd7922sd7932sd7942sd795+162sd795a2sd7962sd7982sd7992sd8002sd801nec 824anec d 8092sd811 toshibanec d 809 knec k 81325c33252sc22332sb8372sc17412sd683a
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2sc2915 hitachi
Abstract: 2Sc515a 2SC2611 2SC1515 2SC2181 2SC2894 2SC1212A 2SC1214 2SC2917 2SC2762
Contextual Info: 116 - a m. £ Type No. 2SC 1490 t h□— ^ 2SC 1491 i h□ — =7 2SC2102 2SC2102 2SC 2SC 2SC 2SC ¿01/ 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC ^ h□— •=£ h□ — 2SC2103 2SC2181 2SC2282 2SC3008-KA 2SC2917 2SC2181 2SC1165 2SC2917 2SC2762 2SC 1514
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2sc21022sc22812sc22822sc2103+112sc3008-ka2sc21812sc29172sc2915 hitachi2sc515a2sc26112sc15152sc28942sc1212a2sc12142sc2762
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2SK332
Abstract: 2sc693 2SC306 2SD43 2SB6 2SK33 2SC338 sd331 SB5.0
Contextual Info: 3 f Contin ued from preceding page. SANYO HIGH FREQUENCY APPLICATIONS Classified by package and arranged in order of decreasing £7 . Minus sign for PUP is omitted due to space limitations. Type Ntndber Case Applications VCBO [V] 2SC207S 10220 27MHz CB Transceiver Driver
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2sc207s27mhz2sk3322sc693+72sc3062sd432sb62sk332sc338sd331sb5.0
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audio amplifier POWER TRANSISTORS
Abstract: 2sc3807 2SK669 mosfet analog switch 500 W POWER AMPLIFIER 2SA1692 2SA1763 2SB511 2SK1840 audio power amplifier
Contextual Info: Continued from previous page Absolute maximum ratings Package Device tSfP I Applications VCBO VCEO Ve» W V) « •C ; m w m I I Electrical characteristics (Tt = 25 ”C) i Icbo m u Vcb max (jiA) V » m [¡G B O *>FE # Vce *te I te hfE I Vce (mA) (V)
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2sb632kt01262sd612k2sa1692+122sc38072sc38082sb5112sd3252sb514audio amplifier power transistors2sk669mosfet analog switch500 w power amplifier2sa17632sk1840audio power amplifier
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2SD636 R
Abstract: 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601
Contextual Info: - 220 - Ta=25tC, *EP(àîc=25tC M & 2SD526 t± & ÄS 2SD545 m V'cEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) 80 80 4 LF PA 25 25 1 220 180 15 70 50 7 Ä 2 PA/PSW/DDC/Reg 2SD553 Ä S PSW/PA m VCBO PA 2SD552 2SD560 m ICEO (max) (/¿A) 30 0. 6 n k 4$ 14 hF E Vc b
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2sd5262sd5452sd5522sd553+162sd5602sd5682sd5692sd5712sb639h2sd629h2sd636 r2sd6362sb6152sd650h2sb6132sd5112sd6462sd6372sb6312sd601
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-upstk442-130m56730asppac011a+7pac010aupc2581pal005astk413-020aupc2581vecg semiconductors master replacement guidestrs5717
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2SC1135
Abstract: 2SC1168 2sc1451 2SC1426 2sc3800 2sd1111 toshiba 2sc783 2SD641 2SC710 2SD642
Contextual Info: - 114 - S! £ T y p e No. * tt £ Manuf. H £ SANYO m 2SC 1424 s 2SC 1425 B m 2SC 1426 2SC 1427 M NEC HITACHI ÍL "M ± FU J ITSU il tö T MATSUSHITA m h MITSUBISHI □ — A ROHM 2SC1199 s 2 S C 1200 m 2SC 3 8 7 A T M m. 2SC 1428 2SC 1429 V ~— * 2SC 1430
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2sc12002sc11992sc387atm2sc2814+142sc380tm2sc4612sc7102sc2059k2sc25002sc11352sc11682sc14512sc14262sc38002sd1111toshiba 2sc7832sd6412sd642
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TT 2206
Abstract: tt 2194 TT 2188 2SC3008-KA TT 2206 sanyo 2sc2103a TT 2190 2SC2106 2SC2196 sl 2172
Contextual Info: - 132 - tt m % Type No. 2SC 2172 2SC 2173 2SC 2176 2SC 2177 2SC 2178 X 2SC 2180 2SC 2181 2SC 2182 2SC 2183 2SC 2186 2SC 2188 / 2SC 2189#' 2SC 2190 2SC 2191 2SC 2192 2SC 2193 2SC 2SC 2SC 2SC 2SC 2SC 2SC 2SC SANYO M S TOSHIBA m s NEC SL HITACHI a S. S M dr il
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2sc26432sc2496a2sc29052sc1118+132sc26402sc22822sc17292sc2103a2sc3008-katt 2206tt 2194tt 2188tt 2206 sanyott 21902sc21062sc2196sl 2172
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NEC 2561
Abstract: NEC 2581 nec 2565 2565 nec 2SC2564 2SC2320 NEC 2562 2581 NEC 2561 nec 2SC237
Contextual Info: - 3 . n SANYO m ±L H IT A C H I □ — h. tt 2SC 2552 ^ 3fC S 2SC3038 2SC2333 ¿5b¿Oi¿ 2SC2738 2SC3968 2SC 2 553 / & 2SC3039 2SC2335 2SC2613 2SC2739 2SC4205 2SC2749 2SC3365 2SC2841 € TO SH IBA 2SC 2 5 5 5 " - ' NEC 2SC 2556-.- tó T 2SA505 2SC2690 2SC 2557
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2sc30382sc23332sc27382sc3968+162sc30392sc23352sc26132sc27392sc42052sc2749nec 2561nec 2581nec 25652565 nec2sc25642sc2320nec 25622581 nec2561 nec2sc237
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FN1016
Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773
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2n11122n12122n12172n1711+152n2219a2n22222n2222a2n23692n2369afn10162sc9012on4409on4673on4843c9012s2000a3bul310xi2sd5080mn1016
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2SC536
Abstract: D612K b632k 2sc1175 D612 2SB632 2SB632K 341G 2SD438 B632
Contextual Info: Ordering n u m b e r:EN341G 2SB632,632K/2SD612,612K N 0.34 IG PNP/NPN Epitaxial Planar Silicon Transistors SAW O 25V/35V, 2A Low-Frequency Power Amp Applications F e a tu re s • High collector dissipation and wide ASO. : 2SB632,632K A b solute M axim um R atin g s a t Ta = 25°C
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en341g2sb632632k/2sd6125v/35v+102sb632kd612kb632kd612a2sc5362sc1175d612341g2sd438b632
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2SC2320
Abstract: 2SD786 2SC4280 2sc1832 2sc738 2SC1818 2SC 1827 F 2SD1203 2SC1831 2sc2631
Contextual Info: - VH - m. « tt Type No. 2SC 1818 S 'fé S « Manuf. SANYO $ T O SHIBA 2SD425 T X NEC T 2SC 1820 s±a 2SC2329 2SC 1822 2SC2082 2SC 1823 S±ü §±® 2SC 1824 *±a 2SC 1825 2SC 1826 ıil o' y-yry 2SC 1827 »*'' 2SC 1828 ¥> 2SC 1829 ^ 2SC 1830 *' 2SC 1831
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2sc18182sc18192sc18202sc1822+152sc18232sc18242sc18252sc18262sd4252sc17552sc23202sd7862sc42802sc18322sc7382sc 1827 f2sd12032sc18312sc2631
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2sa914o-1262sa9002sc2556+112sc2556alm317ko-220lm317tthinki transistor catalogaudio amplifier icbd249c catalogaudio high power amplifier3dd3012sc32292sa747
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