c3807
Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Contextual Info: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4
|
OCR Scan
|
k2270a1765a1497/c3860a1503/c3864+16a1509/c3899a1511/c3901a1572/a1574/c4070a1582/c4113a1590/c4121c3807c3898k443d16810k545k1311b1127c4146k2073b986
|
PDF
|
D612K
Abstract: D612 transistor B632K transistor b632k TRANSISTOR D612 D612 k 2SB632 D612 2SB632K d612k to126
Contextual Info: Ordering number:341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features Package Dimensions • High collector dissipation and wide ASO. unit:mm 2009B [2SB632, 632K/2SD612, 612K]
|
Original
|
2sb632632k/2sd6125v/35v2009b+10o-1262sb632kd612kd612 transistorb632ktransistor b632ktransistor d612d612 kd612d612k to126
|
PDF
|
2sc536
Abstract: B632K d612k 2sc1175 8Q transistor d612 2SB632 2SB632K 341G 2SB6
Contextual Info: Ordering' number; EN341G 2SB632.632K/2SD612.612K N 0 .3 4 IG PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i 25V/35V, 2A Low-Frequency Power Amp Applications F eatures • High collector dissipation and wide ASO. : 2SB632,632K A b solu te M axim um R atings at Ta = 25°C
|
OCR Scan
|
en341g2sb632632k/2sd6125v/35v+102sb632kd612k10haje2sc536b632k2sc11758q transistord612341g2sb6
|
PDF
|
B632K
Abstract: D612 transistor 2SC536 D612K transistor 2sc1175 2SC536 transistor transistor b632k 2sc1175 2sd438 transistor B632
Contextual Info: Ordering number:ENN341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features Package Dimensions • High collector dissipation and wide ASO. unit:mm 2009B [2SB632, 632K/2SD612, 612K]
|
Original
|
enn341g2sb632632k/2sd6125v/35v+122009bo-126b632kd612 transistor2sc536d612ktransistor 2sc11752sc536 transistortransistor b632k2sc11752sd438 transistorb632
|
PDF
|
c4460
Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
Contextual Info: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4
|
OCR Scan
|
1503/c1565/c1574/c1590/c+161616/c1654/cc38201782/cb1235/dc3151c4460d1651d1047k d1047b817c2621d1650b1269c4106d895
|
PDF
|
c2314
Abstract: c3807 C3502 a1249 C3953 C3117 transistor c3807 c3116 d826 b1127
Contextual Info: S4PfVO X O — 1 2£> O :T0-126ML, *:T0-126LP, Unmarked :T0-126. \ \ Type T r a n s i s t o r s ♦¡D arlington V CEO I \ V C \ (mA) \ 18 2 0 2 5 3 5 4 5 5 0 7 0 6 0 8 0 10 0 12 0 16 0 A1404 A15380 C3598 <39530 200 A1723 C4271 C4660O A1402 C3596 A15360
|
OCR Scan
|
t0-126mlt0-126lpt0-126a1352+15a1380a1406a14780a1540oc3416c3502c2314c3807a1249c3953c3117transistor c3807c3116d826b1127
|
PDF
|
2SC536
Abstract: D612K b632k 2sc1175 D612 2SB632 2SB632K 341G 2SD438 B632
Contextual Info: Ordering n u m b e r:EN341G 2SB632,632K/2SD612,612K N 0.34 IG PNP/NPN Epitaxial Planar Silicon Transistors SAW O 25V/35V, 2A Low-Frequency Power Amp Applications F e a tu re s • High collector dissipation and wide ASO. : 2SB632,632K A b solute M axim um R atin g s a t Ta = 25°C
|
OCR Scan
|
en341g2sb632632k/2sd6125v/35v+102sb632kd612kb632kd612a2sc5362sc1175d612341g2sd438b632
|
PDF
|
