2SD1063 Search Results

2SB827

Abstract: 2SD1063
Contextual Info: JMnic Product Specification 2SB827 Silicon PNP Power Transistors • DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1063 ・Wide area of safe operation ・Low collector-emitter saturation voltage : VCE sat =(–)0.4V max. APPLICATIONS ・Universal high current switching as solenoid

2SD1063

Abstract: 2SB827
Contextual Info: SavantIC Semiconductor Product Specification 2SD1063 Silicon NPN Power Transistors • DESCRIPTION ·With TO-3PN package ·Wide area of safe operation ·Low collector saturation voltage ·Complement to type 2SB827 APPLICATIONS ·Universal high current switching as solenoid

2SB827

Abstract: 2SD1063
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB827 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1063

2SB827

Abstract: 2SD1063 SC-65
Contextual Info: 2SD1063 NPN PLANAR SILICON TRANSISTOR SC-65 ! PSW / D / DDC ! COMPLEMENTARY TO 2SB827 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature

2SD1087

Abstract: 2SD1094 2SD1067 2SD1066 2SD1071 "SCA 62" 2SD1063 2SD1064 2SD1065 2SD1069
Contextual Info: - 234 - æXËtë M S ŒJ f± U=2bX¡, *W(ilc=2bV '4v n n # m tt (Ta=25‘ C) [*EPtttyp0] Pe* (max) (V) (A) (V) <W) (ÏÏ) VcB (V) (/¿A) (min) (max) VCE (V) (max) (V) Ic / I e (A) Ic (A) (V) Ib (A) 2SD1063 PSW 60 50 7 60 100 40 70 280 2 1 0.4 4 2SD1064 PSI

2SB827

Abstract: W001 n068
Contextual Info: I Ordering num ber: EN688G 2SB827/2SD1063 SA\YO PNP/NPN Epitaxial Planar Silicon Transistors 50V/7A Switching Applications i Use : U n iv e rs a l h ig h c u r r e n t s w itc h in g as s o le n o id d r i v in g , h ig h sp eed i n v e r t e r and c o n v e rte r.

2SD568L

Abstract: idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD Max hFE *T ON) Min (Hz) Max k)N Max (A) (s) ICBO r (CE)Mt Max (Ohms) Toper Max Package Style CO D vices 20 Watts or More, (Cont'd) 5 10 2SA1185 2SB827 2SD1063 2SB754

2SB827

Abstract: 2SD1063 SC-65
Contextual Info: 2SB827 PNP PLANAR SILICON TRANSISTOR SC-65 ! PSW / D / DDC ! COMPLEMENTARY TO 2SD1063 ABSOLUTE MAXIMUM RATING TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature

2SB827

Abstract: 2SD1063
Contextual Info: SavantIC Semiconductor Product Specification 2SB827 Silicon PNP Power Transistors • DESCRIPTION ·With TO-3PN package ·Complement to type 2SD1063 ·Wide area of safe operation ·Low collector-emitter saturation voltage : VCE sat =(–)0.4V max. APPLICATIONS

622k

Abstract: IC AT 6884 93003 2SB827 2SD1063 ITR08472
Contextual Info: Ordering number:ENN688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Application Applications Package Dimensions • Universal high current switching as solenoid driving, high speed inverter and converter. unit:mm 2022A [2SB827/2SD1063]

2Sc1625

Abstract: 2S0880 2SD845 2SD1148 2SD2023 2SD880 2SC3692 2SC1881 2SC3144 2SD1275A
Contextual Info: - 224 - % 836 S 836A 8368 837 ^ 2SD 837A 2SD 839 « * s ± a « fé e fé fé fé ~ m Manuf. O 2SD 2SD 2SD 2SD tt oo Type No. 2SD 835 + * MI m T T T 2SC3144 T T # 2SD1190 2SC3145 2SC3038 2SD 844 2SD 845 J * « 2SD1063 2SD 846 * 2E * ± W * 0 as % 0 <m 2SD

2SB827

Abstract: 2SD1063
Contextual Info: Inchange Semiconductor Product Specification 2SB827 Silicon PNP Power Transistors • DESCRIPTION ・With TO-3PN package ・Complement to type 2SD1063 ・Wide area of safe operation ・Low collector-emitter saturation voltage : VCE sat =(–)0.4V max. APPLICATIONS

2SB827

Abstract: 2SD1063
Contextual Info: Inchange Semiconductor Product Specification 2SD1063 Silicon NPN Power Transistors • DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Low collector saturation voltage ・Complement to type 2SB827 APPLICATIONS ・Universal high current switching as solenoid

622k

Abstract: 2SB827
Contextual Info: Ordering number:688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions • Universal high current switching as solenoid driving, high speed inverter and converter. unit:mm 2022A [2SB827/2SD1063]

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD1028

Abstract: 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1001 80 5 300 2W 150 200 1 50 140* 7 2SB800 2SD1002 45 5 1A

2SD977

Abstract: 2SD600K 2sc2233 2sc2373 2SD849 2SD1953 2SD763 ROHM 1004 nec 2sd560 2SD1162
Contextual Info: 228 - s « « tt Manuf. Type No. 2SD 973 -s-virv fc' T 2SD 973A K T 2SD 974 B ÎL tt y 2SD 972 2SD H ï¥ SANYO JÜ ^ TOSHIBA Vy>TV 2SD 971 CD - 975> 2SD 976 g fr 2SD 976A B ÎL 2SD 977 E. & 2SD 978 H H & 2S0 979 2SD1190 a m NEC B ÎL H ITACH I 2SD1162 2SD 11 1 4 K

1032B

Abstract: 2SD845 2SD813 2SD1010 nec 1021 2SC3622 1012 TOSHIBA 1053 2sd1020 2SB1012
Contextual Info: - £ m Type No. 2SD 1010 2SD 1011 2SD 1012 2SD 1017 *- 2SD 1018 2SD 1020 ^ ^ it € H ># SANYO fâ T 2SC3069 fâ T 2SC3495 M £ TOSHIBA 'S NEC B ÍL HITACHI B 2SD 1023 2SD 1024 - %iWjt 2SD 1026 2SD 1029 1030 1031 1032 1032A 2 SO 1032B 2SD 1033 2SD 1034 ^ 2SD

2SD1570

Abstract: 2SD1488 2SD412 2SD411 1116 1141A 2SC3293 2sd1033 2sd1193 2sd1323
Contextual Info: - 234 - m % Type No. tt 2 SD 1 2 1 2 * - H 2 SD 1 213 ^ = 2 SD 1 2 1 4 ^ fé fé fé fé 2 SD 1215 2 SD 1216 2 SD 1 217 ~« n 1 91 «- * 2 SD 1 21 9 ^ 2 SD 1 22 0 n T m T 2SD1393 T 7SD139S fé T - m *£ j£ 2 SD 1 22 3 y m ^ M 2 SD 1 22 5 / □ - A 2 SD 1 2 26

Contextual Info: Continued from previous page Electrical characteristics T a = 25 t Absolute m uknum ratings hreevcEic VC Blnt) nux 0 1C • IB Type No. type AppRcatloas VCBO (V ) VCEO M 1C (A ) PC (W ) (8 > VCE(ul) max GnV) 1C (A ) IB (m A) hFE VCE (V ) frevcE-ic 1C (A )

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SC5072

Abstract: 2SC4698 4685 4686 2SC470-3 2SC4703 4670K 2SC4001 2SC4176 2SC4443
Contextual Info: - 196 - m s T y p e No. 2 SC 4666 tt « Manuf. J z B m SANYO TOSHIBA K S. 2SC 4667 Ä S. 2SC4443 2SC 4668 S tB ä 2SC4523 2SD1412 » S tc 2SC4406 2SC4250 2SC 4669 > fö T 2SC 4670 2SC 4671 / = 2SC 4672 □— A = 2SC 4674 B 4 "" # 2SC 4678 ÜL S. 2SC 4679

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SB1205

Abstract: 2S81119 2Sk222 2sa128
Contextual Info: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf