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    230N10 Search Results

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    Infineon Technologies AG ISZ230N10NM6ATMA1

    - Product that comes on tape, but is not reeled (Alt: 90AJ6129)
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    Avnet Americas () ISZ230N10NM6ATMA1 Ammo Pack 1
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    ISZ230N10NM6ATMA1 Tape & Reel 52 Weeks 5,000
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    Mouser Electronics ISZ230N10NM6ATMA1 95
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    Newark () ISZ230N10NM6ATMA1 Cut Tape 409 1
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    ISZ230N10NM6ATMA1 Tape & Reel 409 100
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    ISZ230N10NM6ATMA1 Tape & Reel 5,000
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    Rochester Electronics ISZ230N10NM6ATMA1 12,827 1
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    TME ISZ230N10NM6ATMA1 5,000
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    Rutronik ISZ230N10NM6ATMA1 Tape & Reel 10,000 5,000
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    EBV Elektronik ISZ230N10NM6ATMA1 53 Weeks 5,000
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    SiTime Corporation SIT1408BI-12-30N-1.000000D

    OSCILLATOR, SIT1408, -40 to 85C, 2520, 25ppm, 3.0V, 1MHz, OE, Default - Tape and Reel (Alt: SIT1408BI-12-30N-1.000000D)
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    Avnet Americas SIT1408BI-12-30N-1.000000D Tape & Reel 6 Weeks 3,000
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    Infineon Technologies AG ISC230N10NM6ATMA1

    Power MOSFET, N Channel, 100 V, 31 A, 0.0193 ohm, TDSON-FL, Surface Mount - Tape and Reel (Alt: ISC230N10NM6ATMA1)
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    Avnet Americas ISC230N10NM6ATMA1 Tape & Reel 52 Weeks 5,000
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    Mouser Electronics ISC230N10NM6ATMA1 6,971
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    Newark () ISC230N10NM6ATMA1 Tape & Reel 100
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    ISC230N10NM6ATMA1 Cut Tape 5
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    ISC230N10NM6ATMA1 Tape & Reel 5,000
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    TME ISC230N10NM6ATMA1 5,000
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    EBV Elektronik ISC230N10NM6ATMA1 53 Weeks 5,000
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    Win Source Electronics ISC230N10NM6ATMA1 13,590
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    SiTime Corporation SIT1602BC-72-30N-10.000000E

    Silicon Oscillator 10MHz 3V 15pF 4-Pin QFN T/R - Tape and Reel (Alt: SIT1602BC-72-30N-10.000000E)
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    Avnet Americas SIT1602BC-72-30N-10.000000E Tape & Reel 6 Weeks 1,000
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    SiTime Corporation SIT9365AC-2E2-30N100.000000T

    Standard Frequency Ultra-low Jitter Differential Oscillator 100MHz 3V 25ppm 6-Pin Surface Mount T/R - Tape and Reel (Alt: SIT9365AC-2E2-30N100.000000T)
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    Avnet Americas SIT9365AC-2E2-30N100.000000T Tape & Reel 6 Weeks 3,000
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    230N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    230N10

    Abstract: IXFN 230N10 230N10
    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 230N10 RDS on t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    230n10ixfn 230n10 230n10 PDF

    230N10

    Contextual Info: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 230N10 VDSS ^D25 R DS on *rr N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr = 100 V = 230 A = 6 mQ < 250 ns s Test C onditions V DSS Tj = 25°C to 150°C


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    230n10 PDF

    IXFN 230N10 230N10

    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 230N10 VDSS ID25 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR


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    230n10ot-227e153432ixfn 230n10 230n10 PDF

    Contextual Info: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 230N10 v ^D 2 5 p D S o n N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr t rr Maximum Ratings Symbol Test Conditions VDSS Tj =25°Cto150°C Tj = 25°C to150°C ;R GS=1 M il


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    ixfn230n10cto150to150ot-227+1e153432 PDF

    230N10

    Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 230N10 VDSS ID25 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR


    Original
    230n10ot-227 PDF

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    o-247plus247isoplus247tmo-204+15o-268o-26476n06-1176n06-1280n06180n06c1162c128026n6060n25c1328120n20c1146c1104c1158 PDF

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


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    o-247plus247isoplus247tmo-268+16o-26480n06-1176n07-1176n07-12100n10170n10sd 20n60ixfx 44n8020n8060n609n80c2625power mosfet 100n20ixfh32n50230n108n80 PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


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    axc-051axc-053axc-101axc-102+16axl-001axl-051axv-102142-12io8142-16io819-08ho17n60b35n120u1ixys dsei 45-12adsdi 35-12a20n8080n0680n60vvy 40-16io1ixys cs 2-12ixfx 44n80 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    o-247plus247isoplus247tmo-204+16o-268o-26476n06-1176n06-1280n06180n06c1146c1162c1278c1106c1156ixfh 60n60c1142c1238c1104ixfn 26n60 PDF

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


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    76n06-1176n07-1176n07-1267n10+1675n1050n2058n2074n2080n2035n3052n3020n80ixfh 60n60ixfx 44n8015n107n80e51g44n8060n6046n50 PDF

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


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    67n1075n1075n10q80n10q+16o-247plus247isoplus247tmo-268o-26480n06-11c1218c1222ixfh 60n60ixfx 44n80c1138c123820n80c1228c1172ixfn 230n10 230n10 PDF

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


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    axc-051axc-051-raxc-102axv-002+16015-14to12x45-16io12x60-08io12x60-12io12x60-14io12x60-16io1dse 130 -06avub 70-12ixgh 30n120vub 70-1630n60b80n1012n60cddsei 30-16 asdsep 15-06a13n50 PDF