1RFS Search Results

1RFS840

Abstract: 1RFS840A
Contextual Info: 1RFS840A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA M ax. @ ■ Lower Ro^c*, : 0.638 £2 (Typ.)

samsung

Abstract: 1RFU220 IPAK IRFU121 irfu310 IRFU010 IRFU012 IRFU020
Contextual Info: - f ± ft Vd s or ? Vd g t s £ tt « £ Vg s rTS fê Ta;:25°C Id * /CH Pd ft m. V g s th) Id s s Ig s s min * /CH (nA) Vg s (V) max Id Vd s (m a ) (V) Vd s = Vg s (V) (V) 4# te Id (oii) D s (o n ) Ciss g fs Coss Crss Vg s =0 (max) *typ Vg s ( 0 ) (V) Id

Contextual Info: IM-608 IM-608 Model 8320 & 8321 Operation & Installation Manual Model 8320 & 8321 Series Programmable Attenuator Units This documentation may not be reproduced in any form, for any purpose unless authorized in writing by Aeroflex / Weinschel, Inc. Aeroflex / Weinschel, Inc.

514256A

Abstract: MCM32256AS70
Contextual Info: MU1UHULA • SEMICONDUCTOR TECHNICAL DATA MCM32256 MCM32L256 256K x 32 Bit Dynamic Random Access Memory Module T he M CM 32256 is an 8M dynam ic random access mem ory DRAM module organized as 262,144 x 32 bits. The module is a 72-lead single-in-line mem ory

IC CD 4440 pin diagram

Abstract: GZ150 MCM4L4400-70 MCM44400N70 MCM44400N-60
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM44400 MCM4L4400 Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode The MCM44400 is a 0.8n CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate

AKD4753

Abstract: AK4753 2FC17 AK4683 2FB2 2FC12 1E1B9 2FB15 1FC6 MARKING 1FA8
Contextual Info: [AK4753] AK4753 2-in, 4-out CODEC with DSP Functions GENERAL DESCRIPTION The AK4753 is a two input, four output audio CODEC with integrated digital signal processing. The outputs can be configured either as single-ended or differential. An internal PLL allows the chip to run in

SSS60N

Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
Contextual Info: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00

1RFS730

Abstract: irfs730a
Contextual Info: IRFS730A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gale Charge Extended Safe Operating Area Lower Leakage Current : 10 pA{M ax. @ V^. =400V - 400V

03N087

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ S T IT U T E S A PR O PR IE TA R Y DESIGN OF PACKARD E L E C T R IC DIVISION AND IS NOT TO B E D UPLICATED OR REPRODUCED WITH­ OUT AUTHO RITY OF PACKARD E L E C T R IC DIVISION. DATE DO NOT SCAL E SYM AUTH REVISION RECORD

IRF 450 MOSFET

Abstract: IRF820 IRF821 IRF823 IRF820..821 72SM MTP3N45 IRF820.821 transistor IRF 450 4570 821
Contextual Info: MOTOROLA SC X S T R S /R F 11E D I h3b7ESM 0GÔTP05 {, | MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode S ilicon G ate TM O S These T M O S Power FETs are designed for high

AD14060

Abstract: ad14060lbf AD14060L ADSP-21060 lA1d ms2107 ADSP-20160 22760a
Contextual Info: Quad-SHARC DSP Multiprocessor Family AD14060/AD14060L CS TIMEXP LINK 1 LINK 3 LINK 4 IRQ2–0 FLAG2, 0 CPA SPORT 1 SPORT 0 TCK, TMS, TRST FLAG1 FLAG3 TDO LINK 0 LINK 2 LINK 5 TDI SHARC_B EBOOT, LBOOT, BMS EMU CLKIN RESET SPORT 0 TCK, TMS, TRST FLAG1 FLAG3

SP0256-AL2

Abstract: SPO256 SPR016 gg2j Radio Shack spr016 sp0256al2 tandy spr016 SP0256 sound phase checker SPO-256
Contextual Info: r a ï b a c k D oc. # 17517 Catalog Number 276-1784 TECHNICAL DATA AN EXCLUSIVE RADIO SHACK SERVICE TO THE EXPERIMENTER SP0256 NARRATO R SPEECH PROCESSOR Features Tim • • * • * * • RÔM D VDD C 7 S&Y c 6 DS^C 9 w c ■0 A7 c I Stfl OUT c 12 AÔC l ì

1rfs

Contextual Info: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function HITACHI ADE-203-028G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word X 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS

lzl 24h

Abstract: pioneer PAL 007 A CNC DRIVES ford EEC V pioneer PEG 468 AM27S43 AM29300 am29325 Am29434 YA11
Contextual Info: a 32-Bit Microprosrammable Products Am29C300/29300 1 9 8 8 D ata B o o k Advanced Micro D e v ic e s a Advanced Micro Devices Am29C300/29300 Data Book 1988 Advanced Micro Devices Advanced Micro Devices reserves the right to make changes in its products without

4229-3CB

Abstract: ferroxcube Ee core pw 380v 04 x L4819
Contextual Info: May 1997 % M i c r o Linear ML4819 Power Factor and P W M Controller "C o m b o " GENERAL DESCRIPTION FEATURES The ML4819 is a com plete boost m ode Pow er factor Controller PFC w hich also contains a PW M controller. The PFC circuit is sim ilar to the ML4-812 while the PWM

Contextual Info: IRFS610A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VDS= 200V

IRFS640

Abstract: irfs641
Contextual Info: N-CHANNEL POWER MOSFETS IRFS640/641 FEATURES • L o w e r R d s io n • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Lower input ca p acita nce • Extended safe operating area • Improved high tem perature reliability

FR9110

Abstract: FR91 1RFR9020 Samsung D-PAK IRFR9022 IRFR9120 IRFR9121 IRFR9210 IRFR9212
Contextual Info: - mA SÜ £ it % i £ fg Ta=25t> Vd s or Vd g Vg s (V) (V) Id Pd * /CH * /CH (A) m E& Vg s th) Id s s Igss Vg s (V) (H A ) Vd s (V) (V) (V) Id (mA) (max) *typ V g s ( 0 ) (V) SAMSUNG SAMSUNG P P -50 -50 0. 28 0. 33 1RFR9110 IRFR9111 1RFR9120 IRFR9121 IRFR9210

MCM4117L-15

Abstract: MCM4117L-20 MCM4117L-25 MCM4117L-30
Contextual Info: M O TO R O LA M C M 4117 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY MOS N-CHANNEL 16,384-BIT DYN AM IC RANDOM ACCESS M EM ORY dou ble-polysilicon te c h n o lo g y , this device optim izes speed, pow er, a *S v m S S n o ro w and co lu m n address in puts, th e M C M 4 1 17 re­

soc toshiba

Abstract: TC521000P JD-03
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC521000P/J 1MBit 256K X PRELIMINARY 4 Field Memory IDESCRIPTION 1 The TC521000P/J is a CMOS 1Mbit Field Memory organized as 256K words by 4_bits, and features separate inputs/outputs, each equipped with an 8 bit serial shift register (32K

b 772 p

Contextual Info: MOSFETs FUNCTION GUIDE TO-3P FULL P ACK A G E N -CH A N N EL BVos$ V lo(on)(A) Ros(on)(Q) R0jc(K/W) Po(Watt) Page IRFS141 IRFS151 60 19.40 27.70 0.077 0.055 1.50 1.30 83 96 767 772 IRFS140 IRFS150 100 19.40 27.70 0.077 0.055 1.50 1.30 83 96 767 772 IRFS241

1RFS640A

Abstract: irf530a irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A IRFZ44A SSP45N20A
Contextual Info: Device List T0-220 1RFZ14A IRFZ24A IRFZ34A IRFZ44A IRF510A IRF520A IRF530A IRF540A [RF550A SSP70N10A IRF610A IRF620A IRF630A IRF640A IRF650A SSP45N20A IRF614A IRF624A IRF634A IRF644A IRF654A IRF710A IRF720A IRF730A IRF740A IRF750A SSP1N50A [RF820A IRF830A

Contextual Info: HM65W8512 Series 524288-word x 8-bit High Speed CMOS Pseudo Static RAM HITACHI ADE-203-289B Z Rev. 2.0 Dec. 9, 1994 Description The Hitachi HM65W8512 is a CMOS pseudo static RAM organized 512-kword x 8bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (im Hi-CMOS process

1rfz30

Abstract: 1RFU220 irfu110 IRFU121 irfu310 IRFU020 IRFU111 IRFU120 IRFU210 IRFU212
Contextual Info: - 266 - f ft A £ m € tt € Id Pd V Vd s Vg s or * /CH * /CH t Vdg K V IRFZ30 IRFZ32 1RFZ34 IR IR IR IR IR IR fR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR * + UPchiNc IRFU02O IRFUQ22 IRFUI10 IRFU111 IRFU120 IRFU121 ( RFU210