SSS60N
Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
Contextual Info: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00
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o-220irfsz20sss15n05irfsz30+15irfsz40sss50n05sss60n05irfsz24sss15n06irfsz34sss60nsss6n60sss50n061rfs644irfs540irfs541sss7n60irfs630rfs830
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IRLSZ14
Abstract: SSS50N06
Contextual Info: FUNCTION GUIDE MOSFETs TO-220 N-CHANNEL LOGIC LEVEL FET (Continued) BVoss(V) lo(on)(A) Ros(on)(Q) FWjc(K/W) PofWatt) Page IRL510 IRL520 IRL530 IRL540 '0 0 4.00 7.90 13.00 24.00 0.750 0.400 0.200 0.110 5.00 3.00 1.70 1.00 25 42 75 125 872 877 882 887 IRL611
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o-220irl510irl520irl530+8irl540irl611irl621irl631irl641irl610irlsz14sss50n06
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SSS50N06
Abstract: AGSA 50 250M SSS50N05
Contextual Info: N-CHANNEL POWER MOSFETS SSS50N06/05 FEATURES • Extremely Lower R d s o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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sss50n06/05o-220sss50n06sss50n05+3o-220fagsa 50250m
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