IRL610 Search Results

Contextual Info: IRL610A A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology CO CO o ♦ Lower Input Capacitance II ^D S o n = ♦ Rugged Gate Oxide Technology 200 V 0.046Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V

Contextual Info: IRL610 A d van ced Power MOSFET FEATURES BVDSS - ♦ Avalanche Rugged Technology CO CO o ♦ Lower Input Capacitance II ^D S o n = ♦ Rugged Gate Oxide Technology 200 V 0.046Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 200V

Contextual Info: IRL610 A d van ced Power MOSFET FEATURES BVdss = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 0.046Q 3.3 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -2 2 0 ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 200V

IRF MOSFET 100A 200v

Abstract: IRL610A
Contextual Info: IRL610A A dvanced Power MOSFET FEATURES B V DSS — 2 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance 00 00 ^DS on = ♦ Rugged Gate Oxide Technology 0 .0 4 6 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 200V

IRL610

Contextual Info: $GYDQFHG 3RZHU 026 7 IRL610 FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.046Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.3 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V

IRL610S

Contextual Info: $GYDQFHG 3RZHU 026 7 IRL610S FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.5Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.3 A ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature

Contextual Info: IRL610S Advanced Power MOSFET FEATURES B^DSS - ♦ Avalanche Rugged Technology CO a II ♦ Lower Input Capacitance CO ^ D S o n = ♦ Rugged Gate Oxide Technology 200 V 1.5Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 150°C Operating Temperature

IRL610A

Abstract: DIODE FS 601
Contextual Info: IRL610A A d van ced Power MOSFET FEATURES b v dss - 200 V • Logic-Level Gate Drive ■ Avalanche Rugged Technology ^D S o n = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance lD = 3.3 A ■ Improved Gate Charge ■ Extended Safe Operating Area

ld33a

Abstract: IRL610A
Contextual Info: IRL610A Advanced Power MOSFET FEATURES • BVdss = 200 V Logic-Level Gate Drive Rds oii = 1-5 £2 ■ Avalanche Rugged Technology ■ ■ Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area lD = 3.3 A

IRL610A

Contextual Info: $GYDQFHG 3RZHU 026 7 IRL610A FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.046Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.3 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V

IRL610S

Abstract: IRF MOSFET 100A 200v
Contextual Info: IRL610S A dvanced Power MOSFET FEATURES B V DSS — 2 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance CO CO ^DS on = ♦ Rugged Gate Oxide Technology 1 .5 Î 2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature

Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRL610/IRL611 FEATURES • Lower R d s ON • • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: IRL610A A d van ced Power MOSFET FEATURES BVdss = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 0.046Q 3.3 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -2 2 0 ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 200V

IRL610

Abstract: IRL611
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFETS IRL610/611 FEATURES • • • • • • • • Lower Rds ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRF MOSFET 100A 200v

Abstract: IRL610
Contextual Info: IRL610 A dvanced Power MOSFET FEATURES B V DSS — 2 0 0 V ♦ Avalanche Rugged Technology II D ♦ Lower Input Capacitance 00 00 ^DS on = ♦ Rugged Gate Oxide Technology 0 .0 4 6 Î2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 200V

irf1740

Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Contextual Info: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

FQP630

Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
Contextual Info: Discrete MOSFET TO-220 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220 N-Channel ISL9N302AP3 30 Single 0.0025 0.0033 - - 110 75 345 FDP8030L 30 Single 0.0035 0.0045

IRL610A

Abstract: IRLS610A GS21
Contextual Info: IRLS610A Advanced Power MOSFET FEATURES BVDSS = 200 V ! Avalanche Rugged Technology RDS on = 0.046Ω ! Rugged Gate Oxide Technology ! Lower Input Capacitance ID = 2.5 A ! Improved Gate Charge ! Extended Safe Operating Area TO-220F ! Lower Leakage Current : 10 A (Max.) @ VDS = 200V

IRLZ14

Abstract: IRLZ24 50N05l irl530 IRL511
Contextual Info: FUNCTION GUIDE POWER MOSFETs LOGIC LEVEL SFET TO-220 N-CHANNEL BVdss V ID(on)(A) RDS(on)( Q) Part Number 50.00 8.00 15.00 25.00 35.00 50.00 0.30 0.15 0.07 0.04 0.022 IRLZ10 IRLZ20 IRLZ30 IR LZ 40 SSP 50N 05L 60.00 8.00 15.00 25.00 35.00 50.00 0.30 0.15 0.07

Irf640 irf9540

Abstract: IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Power MOSFET S/STR Standard MOSFET PART NO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907A-TF KST3904-TF KST3906-TF