SSP45N20A
Abstract: ssp45n20a equivalent
Contextual Info: SSP45N20A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.065 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 35 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V
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ssp45n20ao-220ssp45n20a equivalent |
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1RFS640A
Abstract: irf530a irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A IRFZ44A SSP45N20A
Contextual Info: Device List T0-220 1RFZ14A IRFZ24A IRFZ34A IRFZ44A IRF510A IRF520A IRF530A IRF540A [RF550A SSP70N10A IRF610A IRF620A IRF630A IRF640A IRF650A SSP45N20A IRF614A IRF624A IRF634A IRF644A IRF654A IRF710A IRF720A IRF730A IRF740A IRF750A SSP1N50A [RF820A IRF830A
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t0-2201rfz14airfz24airfz34a+13irfz44airf510airf520airf530airf540arf550a1rfs640airf630assp4n60asirfs630assp2n60asss7n60assp45n20a
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SSP45N20A
Abstract: diode kd 610 D485
Contextual Info: SSP45N20A Advanced Power MOSFET FEATURES B V dss = 200 V Rugged Gate Oxide Technology ^DS on = 0 .0 6 5 Q . Lower Input Capacitance Improved Gate Charge In = • Avalanche Rugged Technology ■ ■ ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 M A(Max.) @ VDS = 200V
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ssp45n20ao-220diode kd 610d485 |
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SSP45N20A
Contextual Info: SSP45N20A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ Vos = 200V
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ssp45n20a |
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SSP45N20A
Abstract: ssp*45N20A
Contextual Info: Advanced SSP45N20A P o w e r MOSFET FEATURES B V DSS • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n — lD ■ E xtended S afe O pe ra ting A rea
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ssp45n20a054fto-220ssp*45n20a |
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Contextual Info: Advanced SSP45N20A Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n ID = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10H A (M ax.) @ V DS = 200V
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ssp45n20ao-220 |
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SSP45N20A
Abstract: pj 53 diode
Contextual Info: SSP45N20A Advanced Power MOSFET FEATURES BVdss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 35 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ V DS = 200V
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ssp45n20a001010b30-otot0-220+6qq3b32flo-220500min7tb414edd3b33dpj 53 diode
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irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Contextual Info: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040
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ssr3055airfr014airfr024airfr034a+16irfr110airfr120airfr130airfr210airfr220airfr230airf1740irl244irf1740aks 0550irl244airfz34assh6n80airf634airfs750irfs640
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2n70002n70022sj3772sj378+162sj3802sj4012sj4022sj4072sj4122sj419yta630mtw14p20bss125mtaj30n06hd2sk2837 equivalentsmu10p05smp60n06 replacementste180n10rfh75n05eirfd620
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ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
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f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7ka1m0880 application notess8550 d 331dual cc baw62ka2s0680ss8550 sot-23mpsa92(ksp92) equivalentdiode 1n4148 ll-34
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SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
Contextual Info: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040
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ssr3055airfr014airfr024airfr034a+16irfr110airfr120airfr130airfr210airfr220airfr230assd2104irfm014ssp80n06irfu210airfi530asss7n60airfu*230asss7n60a 951ssp2n60airf640a
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ssp*45N20A
Abstract: SSP45N20A 45N20B 45N20
Contextual Info: SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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ssp45n20b/sss45n20bo-22045n20bssp45n20b+4fp001ssp*45n20assp45n20a45n20
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