IRF654A Search Results

RG-53

Contextual Info: IRF654A Advanced Power MOSFET FEATURES B V = 250 V ^ D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 21 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V

Contextual Info: $GYDQFHG 3RZHU 026 7 IRF654A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.14Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 21 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V

IRF654A

Contextual Info: IRF654A A dvanced Power MOSEET FEATURES B V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge dss = 250 V ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V

1RFS640A

Abstract: irf530a irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A IRFZ44A SSP45N20A
Contextual Info: Device List T0-220 1RFZ14A IRFZ24A IRFZ34A IRFZ44A IRF510A IRF520A IRF530A IRF540A [RF550A SSP70N10A IRF610A IRF620A IRF630A IRF640A IRF650A SSP45N20A IRF614A IRF624A IRF634A IRF644A IRF654A IRF710A IRF720A IRF730A IRF740A IRF750A SSP1N50A [RF820A IRF830A

Contextual Info: IRF654A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS = 250V B V dss = 250 V

vm200

Contextual Info: IRF654A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss a 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 iM M ax. @ VDS = 250V

IRF654A

Contextual Info: IRF654A Advanced Power MOSFET FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology RDS on = 0.14 Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 21 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 250V

IRF654A

Abstract: 108D
Contextual Info: IRF654A Advanced Power MOSFET FEATURES B V = 250 V ^D S o n = 0 .1 4 Q dss ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 21 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

irf1740

Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Contextual Info: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

sss4n60a

Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
Contextual Info: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high

SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

Contextual Info: IRF6 5 4 A Advanced Power MOSFET FEATURES B V DSS = 250 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 21 0 .1 4 Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -2 2 0 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

SSD2104

Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
Contextual Info: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040