IRF830B Search Results
IRF830B Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRF830B | Fairchild Semiconductor | 500 V N-Channel MOSFET | Original | 907.14KB | 10 | ||
| IRF830BPBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 5.3A TO-220AB | Original | 8 | |||
| IRF830BPBF-BE3 | Vishay Siliconix | MOSFET N-CH 500V 5.3A TO220AB | Original | 298.91KB |
IRF830B Price and Stock
Vishay Intertechnologies IRF830BPBFTransistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF830BPBF | 1 |
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FAIRCHILD IRF830BIRF830B |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF830B | 4,519 | 437 |
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| IRF830B | 2,000 | 437 |
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| IRF830B | 1,990 | 437 |
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| IRF830B | 1,294 | 437 |
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Fairchild Semiconductor Corporation IRF830BMOSFET N-Channel 500V 4.5A (Tc) TO-220-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF830B | 9,803 | 1 |
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IRF830B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IRF830BContextual Info: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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irf830bo-220ab2011/65/eu2002/95/ec+1 | |
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Contextual Info: IRF830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching |
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irf830b | |
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Contextual Info: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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irf830bo-220ab2002/95/ec2011/65/eu+2 | |
IRF830B
Abstract: IRFS830 IRFS830B
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irf830b/irfs830birf830birfs830irfs830b | |
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Contextual Info: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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irf830bo-220ab2011/65/eu2002/95/ec+1 | |
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Contextual Info: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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irf830bo-220ab2002/95/ec2011/65/eu+2 | |
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Contextual Info: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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irf830bo-220ab2002/95/ec2011/65/eu+2 | |
irf830bContextual Info: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to |
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irf830b/irfs830bimproved00irfs830birfs830+4 | |
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Contextual Info: IRF830B/IRFS830B 500V N-Channel MOSFET Features • • • • • • TO-220 TO-220F IRF Series IRFS Series 4.5A, 500V, RDS on = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability |
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irf830b/irfs830bo-220o-220f54typ+1 | |
IRFS830BContextual Info: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to |
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irf830b/irfs830birfs830b | |
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Contextual Info: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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irf830bo-220ab2002/95/ec2011/65/eu+2 | |
IRF740BPBF
Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
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o-220o-251o-220fpo-247ac+6 | |
thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
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thermistor ksd201irf power mosfets catalogcomplementary mosfets buz11bzx85c6v8 spice model+6 | |
diode IN5818 equivalent
Abstract: TRANSISTOR SMD 58W IN4747A smd diode 101a WIMA FKP1 smd 58w P-44317-EC fan4822 wima fkp1 b2 saturable core oscillator
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fan4822an30042032diode in5818 equivalenttransistor smd 58w+7 | |
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500W TRANSISTOR AUDIO AMPLIFIER
Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
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power247tm500w transistor audio amplifierin5822 diodeirfs6408+7 | |
FQPF*7N65C APPLICATIONS
Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
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uf4003uf4004uf4005uf4006+16 | |
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
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ao4405ao4407ao4408ao4409+16 | |
FQP630
Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
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o-220isl9n302ap3fdp8030lisl9n303ap3+15 | |
sss4n60a
Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
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irf830airf830bpower247tmsss4n60a+9 | |
SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
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sc70-6ot-23fdr8321lfdr8521l+13 | |
thermistor KSD201
Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
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ts-16949iso-14001thermistor ksd201pin configuration npn transistor bc548+8 | |
FQPf10N60C
Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
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fdz201nfdz209nfdz2553nfdz2553nz+16 | |
30T-TO-3PF
Abstract: GRM42-6COG WIMA FKP1 GRM42-6COG* murata GRM42-6X7R104K050 smd ic 611 ECA1EFQ152L fan4822 variac diode capacitor 1600v Aluminum Electrolytic
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feb110-001fan482230t-to-3pfgrm42-6cog+7 | |