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    IRF830B Search Results

    IRF830B Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRF830B
    Fairchild Semiconductor 500 V N-Channel MOSFET Original PDF 907.14KB 10
    IRF830BPBF
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 5.3A TO-220AB Original PDF 8
    IRF830BPBF-BE3
    Vishay Siliconix MOSFET N-CH 500V 5.3A TO220AB Original PDF 298.91KB
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    IRF830B Price and Stock

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    FAIRCHILD IRF830B

    IRF830B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () IRF830B 4,519 437
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    • 1000 $0.71
    • 10000 $0.64
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    IRF830B 2,000 437
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.71
    • 10000 $0.64
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    IRF830B 1,990 437
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    • 10 -
    • 100 -
    • 1000 $0.71
    • 10000 $0.64
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    IRF830B 1,294 437
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    • 100 -
    • 1000 $0.71
    • 10000 $0.64
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    Fairchild Semiconductor Corporation IRF830B

    MOSFET N-Channel 500V 4.5A (Tc) TO-220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRF830B 9,803 1
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    • 10 -
    • 100 $0.69
    • 1000 $0.57
    • 10000 $0.51
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    Vishay Intertechnologies IRF830BPBF

    Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IRF830BPBF 1
    • 1 $0.87
    • 10 $0.79
    • 100 $0.70
    • 1000 $0.58
    • 10000 $0.58
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    IRF830B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRF830B

    Contextual Info: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


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    irf830bo-220ab2011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: IRF830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original
    irf830b PDF

    Contextual Info: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


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    irf830bo-220ab2002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    IRF830B

    Abstract: IRFS830 IRFS830B
    Contextual Info: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    irf830b/irfs830birf830birfs830irfs830b PDF

    Contextual Info: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    irf830bo-220ab2011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    irf830bo-220ab2002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    irf830bo-220ab2002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    irf830b

    Contextual Info: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


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    irf830b/irfs830bimproved00irfs830birfs830+4irfs830airfs830bto-220firf830b PDF

    Contextual Info: IRF830B/IRFS830B 500V N-Channel MOSFET Features • • • • • • TO-220 TO-220F IRF Series IRFS Series 4.5A, 500V, RDS on = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability


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    irf830b/irfs830bo-220o-220f54typ+100x45 PDF

    IRFS830B

    Contextual Info: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original
    irf830b/irfs830birfs830b PDF

    Contextual Info: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original
    irf830bo-220ab2002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


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    o-220o-251o-220fpo-247ac+6irf740bpbfmosfets for lcd tvsihd3n50dirf730bpbfsihf8n50dsihg22n50 PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    thermistor ksd201irf power mosfets catalogcomplementary mosfets buz11bzx85c6v8 spice model+6diode 1n4001 50v 1.0a do-41 rectifier diodek*d1691make smps inverter welding machinetransistor ksp441n5402 spice modeltip122 tip127 mosfet audio amp PDF

    diode IN5818 equivalent

    Abstract: TRANSISTOR SMD 58W IN4747A smd diode 101a WIMA FKP1 smd 58w P-44317-EC fan4822 wima fkp1 b2 saturable core oscillator
    Contextual Info: www.fairchildsemi.com Application Note 42032 FAN4822 Power Factor Correction With Zero Voltage Resonant Switching Introduction The boost converter is a popular topology for improved power factor and reduced line harmonics, as specified in IEC 555-2 and other more recent standards. With this solution


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    fan4822an30042032diode in5818 equivalenttransistor smd 58w+7in4747asmd diode 101awima fkp1smd 58wp-44317-ecwima fkp1 b2saturable core oscillator PDF

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


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    power247tm500w transistor audio amplifierin5822 diodeirfs6408+7220v ac to 9v dc converter circuitdc 48v ac 220v 500w smpsp-channel mosfet 800vsb550 transistordrive motor 10a with transistor p channel mosfetp channel 600v 20a igbtlist of n channel power mosfet PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    uf4003uf4004uf4005uf4006+16uf4007usb10husb1t1102usb1t11avka75420mw005gfqpf*7n65c applicationsbc548 spice modelbf494 spice modelspice model bf199lm3171bc517 spice modelbc547 spice modelbf494 spicemoc3043-m spice modelspice model bc237 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    ao4405ao4407ao4408ao4409+16ao4410ao4411ao4413ao4415ao4422ao4700irf1830girf1830transistor irf1830gapm2054n equivalentapm2054nap85l02hap70n03s2sk3683ap70l02h2sk2696 PDF

    FQP630

    Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A
    Contextual Info: Discrete MOSFET TO-220 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220 N-Channel ISL9N302AP3 30 Single 0.0025 0.0033 - - 110 75 345 FDP8030L 30 Single 0.0035 0.0045


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    o-220isl9n302ap3fdp8030lisl9n303ap3+15fdp7045lisl9n304ap3fdp6676fdp6670alsfp9z24fqp630fqp27n25fqp55n10irf630bfqp630 equivalentsfp9634irf640bfdp6035lirf620bssp7n60a PDF

    sss4n60a

    Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
    Contextual Info: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high


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    irf830airf830bpower247tmsss4n60a+9irfs634airfs630assp4n60airf640bsss7n60airfu210assp7n60airf634birf840a china PDF

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    sc70-6ot-23fdr8321lfdr8521l+13fdfs2p106afdfs2p103fdfs2p102ssp6n60airf650irf540 mosfet with maximum vds 12vssp2n60bsss7n60bssr2955irfs630assp4n60asss3n90airf634a PDF

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    ts-16949iso-14001thermistor ksd201pin configuration npn transistor bc548+8pin configuration transistor bc547 smd packagingfqpf*7n65c applicationsbc547 sot package sot-23pin configuration pnp smd transistor bc557diode 1n4148 ll-34pin configuration npn transistor bc547bc557 sot-23bc547 smd PDF

    FQPf10N60C

    Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
    Contextual Info: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V


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    fdz201nfdz209nfdz2553nfdz2553nz+16fdz2551nfdz7064nsff9140fqaf47p06ssf10n60bssf7n60bfqpf10n60cfqpf*10n20cfqpf10n20cfqp17p06fqpf6n80fqp630 equivalentfqu17p06fqpf*5n50cirf650fqa90n08 PDF

    30T-TO-3PF

    Abstract: GRM42-6COG WIMA FKP1 GRM42-6COG* murata GRM42-6X7R104K050 smd ic 611 ECA1EFQ152L fan4822 variac diode capacitor 1600v Aluminum Electrolytic
    Contextual Info: www.fairchildsemi.com FEB110-001 User’s Guide Zero Voltage Switched Power Factor Controller Featured Fairchild Product: FAN4822 www.fairchildsemi.com/FEBsupport 2005 Fairchild Semiconductor Page 1 of 13 Rev 1.2 April 2005 www.fairchildsemi.com Contents


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    feb110-001fan482230t-to-3pfgrm42-6cog+7wima fkp1grm42-6cog* muratagrm42-6x7r104k050smd ic 611eca1efq152lvariac diodecapacitor 1600v aluminum electrolytic PDF