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IRF730BPBF Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRF730BPBF		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 5.5A TO-220AB	Original	PDF		9

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Vishay Siliconix


Vishay Siliconix IRF730BPBF MOSFET N-CH 400V 5.5A TO-220AB
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RS	IRF730BPBF	Bulk			1,000	1 - 10 - 100 - 1000 $1.24 10000 $1.09	Get Quote

IRF730BPBF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRF740BPBF Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology	Original	o-220 o-251 o-220fp o-247ac +6irf740bpbf mosfets for lcd tv sihd3n50d irf730bpbf sihf8n50d sihg22n50	PDF
Contextual Info: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	irf730b o-220ab 2011/65/eu 2002/95/ec +112-mar-12	PDF
Contextual Info: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	irf730b o-220ab 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	irf730b o-220ab 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	irf730b o-220ab 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	irf730b o-220ab 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
IRF730BPBF Contextual Info: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness	Original	irf730b o-220ab 2011/65/eu 2002/95/ec +212-mar-12 irf730bpbf	PDF