IRF614A Search Results
IRF614A Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRF614A | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| IRF614A | Fairchild Semiconductor | Advanced Power MOSFET | Scan | 154.94KB | 6 |
IRF614A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IRF614AContextual Info: IRF614A A dvanced Power MOSFET FEATURES B V DSS — 2 5 0 V ♦ Avalanche Rugged Technology ♦ Lower Input Capacitance _Q 00 evi ^DS on = II ♦ Rugged Gate Oxide Technology 2 .0 a A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V |
OCR Scan |
irf614a | |
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Contextual Info: IRF614A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV0SS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 250V |
OCR Scan |
irf614aran06 | |
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Contextual Info: IRF614A Advanced Power MOSFET FEATURES B^DSS - ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology 00 evi Q II ♦ Lower Input Capacitance 250 V 2.0Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V |
OCR Scan |
irf614a | |
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Contextual Info: $GYDQFHG 3RZHU 026 7 IRF614A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V |
Original |
irf614ao-220 | |
1RFS640A
Abstract: irf530a irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A IRFZ44A SSP45N20A
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OCR Scan |
t0-2201rfz14airfz24airfz34a+13 | |
DIODE 19 9Contextual Info: IRF614A A dvanced Power MOSEET FEATURES B V DSS - 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 2.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10nA (M ax.) @ V DS = 250V |
OCR Scan |
irf614a30-otot0-220qq3b32fl+5 | |
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Contextual Info: IRF614A A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 2 .0 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology 00 c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V |
OCR Scan |
irf614a | |
28A1Contextual Info: IRF614A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 p A Max. @ VDS= 250V ■ |
OCR Scan |
irf614a28a1 | |
mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
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Original |
mosfet cross referencepower mosfet cross reference guide2sk2146cross reference power mosfet+6 | |
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 | |
IRF9310
Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
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Original |
device2176r14153cr108/dirf9310+9 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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Original |
2n70002n70022sj3772sj378+16 | |
sss4n60a
Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
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Original |
irf830airf830bpower247tmsss4n60a+9 | |
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ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
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Original |
f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7 | |
SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 | |