1rfz30
Abstract: 1RFU220 irfu110 IRFU121 irfu310 IRFU020 IRFU111 IRFU120 IRFU210 IRFU212
Contextual Info: - 266 - f ft A £ m € tt € Id Pd V Vd s Vg s or * /CH * /CH t Vdg K V IRFZ30 IRFZ32 1RFZ34 IR IR IR IR IR IR fR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR * + UPchiNc IRFU02O IRFUQ22 IRFUI10 IRFU111 IRFU120 IRFU121 ( RFU210
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irfu020t0-251aa1rfu022o-251aa+15rfu3101rfu321rfu411irfu420irfu901irfu90121rfz301rfu220irfu110irfu121irfu310irfu111irfu120irfu210irfu212
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1rfz44
Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)
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irfz20o-220irfz22irfz30+13irfz325to-220irl5101rfz44mfe92001rfz30irfz121rfz22vn10lpirfu9212irfu9220irfu9222irfu9022
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1RFZ34
Abstract: STM TO-220 marking IRFZ34 IRFZ34 international
Contextual Info: International ioR Rectifier HEXFET Power MOSFET • • • • • 4Û5S452 0Q1577Ö STM « I N R PD-9.509B IRFZ34 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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5s4520q1577irfz34o-220+4s54521rfz34stm to-220 markingirfz34 international
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IRF34N
Abstract: 1RFZ34N 1RFZ34 dioda rectifier IRFZ34N V145M 100MS IRF1010 VIQR9246 dioda 12B
Contextual Info: PD-9.1278A • I If c W I 1 1 U V I V 1 i d l llORlRectifier PRELIMINARY _ IRFZ34 N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling V dss
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irfz34no-220a9246irf34n+81rfz34n1rfz34dioda rectifierv145m100msirf1010viqr9246dioda 12b
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1RFZ46N
Abstract: 1RFZ34N 1rf5305 1RFZ34 1rfbf20l
Contextual Info: HEXFEl Power MOSFETs International IöR Rectifier *D >0 V BR DSS Port Number Droin-to-Source Breakdown Voltage (V) Continuous R R DS(on) Continuous PD Drain Current On-State Drain Current Max. Thermal Max. Power 100" Resistance Resistance Dissipation
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1rfz24n
Abstract: 1RFZ34N 1RFBE30 IRF3205 IR 1rfz44 1RFZ44F 1RFZ24 IRF3205 1RFZ34 IR 37 0023
Contextual Info: HEXFEl Power MOSFETs International IQ R Rectifier Part Number v BR 0SS Drain-to-Source Breakdown VoNage (V) ^DS(on) On-State Resistance in •d ■d Continuous R PD Continuous Drain Current Max. Thermal Max. Power Drain Current 100e Resistance Dissipation
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1rfz24n1rfz34nirf32051rfz44f+12-220ab9i47-7904x2irf2807irf520nirf530n1rfbe30irf3205 ir1rfz441rfz241rfz34ir 37 0023
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1RFZ34
Abstract: SMD IRFZ34 AN-994 IRFZ34 IRFZ34S SMD-220
Contextual Info: International ^¡Rectifier PD-9.509B IRFZ34 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V d s s ~ 60V ^DS(on = 0 - 0 5 0 0 ID = 30A Description DATA
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irfz34o-22qo-2201rfz34+4smd irfz34an-994irfz34ssmd-220
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1RFZ34A
Abstract: IRFZ344 1RFZ34 IRFZ34A
Contextual Info: IRFZ34A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BV0SS = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 1 7 5 t Operating Temperature Lower Leakage Current : 10 m A M ax. @
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