IRFS610A Search Results
IRFS610A Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRFS610A | Fairchild Semiconductor | Advanced Power MOSFET | Original | 261.39KB | 7 | ||
| IRFS610A | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| IRFS610A | Fairchild Semiconductor | Advanced Power MOSFET | Scan | 169.44KB | 6 |
IRFS610A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: IRFS610A Advanced Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge - ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V I Low Rds(0 n) ■ 1.169 £1 (Typ.) LO Rugged Gate Oxide Technology |
OCR Scan |
irfs610a | |
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Contextual Info: IRFS610A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VDS= 200V |
OCR Scan |
irfs610ao-220f1rfs610a | |
IRFS610AContextual Info: IRFS610A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V |
Original |
irfs610ao-220f | |
L033AContextual Info: IRFS610A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 uA M ax @ VDS= 200V ■ Low RDS(ON) : 1.250 £2 (Typ.) |
OCR Scan |
irfs610ajrfs610al033a | |
IRFS610AContextual Info: IRFS610A Advanced Power M O SFET FEATURES D S S — R u g g e d T e c h n o lo g y 200 V • A v a la n c h e ■ R u g g e d G a te O x id e T e c h n o lo g y ^ D S o n = ■ L o w e r In p u t C a p a c ita n c e ■ Im p ro v e d G a te C h a rg e lD = 2.5 A |
OCR Scan |
irfs610a | |
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Contextual Info: IRFS610A Advanced Power MOSFET FEATURES B VDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = 1.5 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V H Low Rds(0n) ■ 1.169 £1 (Typ.) LO Rugged Gate Oxide Technology |
OCR Scan |
irfs610a | |
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
|
Original |
2n70002n70022sj3772sj378+16 | |
sss4n60a
Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
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Original |
irf830airf830bpower247tmsss4n60a+9 | |
1RFS640A
Abstract: irf530a irf630a ssp4n60as irfs630a IRF540A SSP2N60A SSS7N60A IRFZ44A SSP45N20A
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OCR Scan |
t0-2201rfz14airfz24airfz34a+13 | |
SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
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Original |
sc70-6ot-23fdr8321lfdr8521l+13 | |
ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
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Original |
f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7 | |
SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 |