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Nisshinbo Micro Devices R3130N30EC-TR-FE VOLTAGE DETECTOR WITH DELAY FUNCTION (INTERNAL COUNTER TYPE) - Tape and Reel (Alt: R3130N30EC-TR-FE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	R3130N30EC-TR-FE	Tape & Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.45	Buy Now
Newark	R3130N30EC-TR-FE	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.51	Buy Now
Rochester Electronics	R3130N30EC-TR-FE		9,000		1	1 - 10 - 100 $0.66 1000 $0.55 10000 $0.49	Buy Now
SiTime Corporation SIT9365AI-4B1-30N300.000000T Standard Frequency Ultra-low Jitter Differential Oscillator 300MHz 3V 20ppm 6-Pin Surface Mount T/R - Tape and Reel (Alt: SIT9365AI-4B1-30N300.000000T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT9365AI-4B1-30N300.000000T	Tape & Reel		26 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $6.00	Buy Now
SiTime Corporation SIT9365AI-4E1-30N300.000000Y Standard Frequency Ultra-low Jitter Differential Oscillator 300MHz 3V 20ppm 6-Pin Surface Mount T/R - Tape and Reel (Alt: SIT9365AI-4E1-30N300.000000Y)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT9365AI-4E1-30N300.000000Y	Tape & Reel		26 Weeks	1,000	1 - 10 - 100 - 1000 $6.13 10000 $5.75	Buy Now
SiTime Corporation SIT9365AC-2B1-30N300.000000Y Standard Frequency Ultra-low Jitter Differential Oscillator 300MHz 3V 20ppm 6-Pin Surface Mount T/R - Tape and Reel (Alt: SIT9365AC-2B1-30N300.000000Y)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT9365AC-2B1-30N300.000000Y	Tape & Reel		26 Weeks	1,000	1 - 10 - 100 - 1000 $5.84 10000 $5.47	Buy Now
SiTime Corporation SIT9365AC-4B1-30N30.720000T Standard Frequency Ultra-low Jitter Differential Oscillator 30.72MHz 3V 20ppm 6-Pin Surface Mount T/R - Tape and Reel (Alt: SIT9365AC-4B1-30N30.720000T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIT9365AC-4B1-30N30.720000T	Tape & Reel		26 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $5.72	Buy Now

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130N30 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFN 130N30 Abstract: 130N30 125OC Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V ID25 = 130 A Ω RDS on = 22 mΩ trr < 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300	Original	130n30 125oc 728b1 ixfn 130n30	PDF
Contextual Info: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V 130 A ^D25 R DS on = 18 mQ ” N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test Conditions V v DSS Td = 25°C to 150°C	OCR Scan	130n30 ot-227	PDF
130N30 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V ID25 = 130 A RDS on = 18 mW trr < 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS	Original	130n30 125oc figure10	PDF
Contextual Info: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 130N30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v DSS 300 > vD0R Tj =25°Cto150°C T.J =25°Cto150°C; RrGS =1 M ft 300 > Vos	OCR Scan	ixfn130n30 cto150 ot-227 e153432	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300	Original	130n30 ot-227 e153432	PDF
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V ID25 = 130 A Ω RDS on = 22 mΩ < 250 ns trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 300	Original	130n30 ot-227 e153432 125oc +1728b1	PDF
IXFN 130N30 Abstract: 130N30 125OC Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V ID25 = 130 A RDS on = 18 mW trr < 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS	Original	130n30 ot-227 e153432 125oc +2figure10 ixfn 130n30	PDF
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	o-247 plus247 isoplus247tm o-204 +15o-268 o-264 76n06-11 76n06-12 80n06 180n06 c1162 c1280 26n60 60n25 c1328 120n20 c1146 c1104 c1158	PDF
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	o-247 plus247 isoplus247tm o-268 +16o-264 80n06-11 76n07-11 76n07-12 100n10 170n10 sd 20n60 ixfx 44n80 20n80 60n60 9n80 c2625 power mosfet 100n20 ixfh32n50 230n10 8n80	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	axc-051 axc-053 axc-101 axc-102 +16axl-001 axl-051 axv-102 142-12io8 142-16io8 19-08ho1 7n60b 35n120u1 ixys dsei 45-12a dsdi 35-12a 20n80 80n06 80n60 vvy 40-16io1 ixys cs 2-12 ixfx 44n80	PDF
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	o-247 plus247 isoplus247tm o-204 +16o-268 o-264 76n06-11 76n06-12 80n06 180n06 c1146 c1162 c1278 c1106 c1156 ixfh 60n60 c1142 c1238 c1104 ixfn 26n60	PDF
52N30 Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50 Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70	OCR Scan	76n06-11 76n07-11 76n07-12 67n10 +1675n10 50n20 58n20 74n20 80n20 35n30 52n30 20n80 ixfh 60n60 ixfx 44n80 15n10 7n80 e51g 44n80 60n60 46n50	PDF
C1218 Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10 Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268	OCR Scan	67n10 75n10 75n10q 80n10q +16o-247 plus247 isoplus247tm o-268 o-264 80n06-11 c1218 c1222 ixfh 60n60 ixfx 44n80 c1138 c1238 20n80 c1228 c1172 ixfn 230n10 230n10	PDF
DSE 130 -06A Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01	OCR Scan	axc-051 axc-051-r axc-102 axv-002 +16015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 dse 130 -06a vub 70-12 ixgh 30n120 vub 70-16 30n60b 80n10 12n60cd dsei 30-16 as dsep 15-06a 13n50	PDF