TRANSISTOR T06 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

transistor t06

Abstract: PDTC124EU
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC124EU NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jun 16 File under Discrete Semiconductors, SC04 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

2N2464

Abstract: TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor
Contextual Info: SME D GENERAL TRANSISTOR CORP BTaöODl 00QG07M Q General Transistor Corporation 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL SIGNAL TRANSISTORS NPN General Purpose Typ» No, Plot (mW) VCEO

2N2464

Abstract: transistor 2n2270 2N6369 D 756 transistor
Contextual Info: GENERAL TRANSISTOR CORP 2ME D • BTaflODl 00QD074 0 ■ General Transistor Corporation "T 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL S IG N A L TRANSISTORS NPN General Purpose Typ» No,

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i

2N5302 EB

Abstract: 2N1463 2n4271
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3

ms 7254 ver 1.1

Abstract: ms 7254 ver 3.0 T557
Contextual Info: MOTOR O L A SC I 12E D I L3b75S4 QOflSMll 2 XSTRS/R F I 7 " -3 3 7 3 MOTOROLA SEMICONDUCTOR MJE13070 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 80 WATTS

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V

IC650

Abstract: MJ1000
Contextual Info: Date:- 18 Jun, 2003 Provisional Data  Data Sheet Issue:- 2 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T0650TA52A MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.

uc 3284

Abstract: westcode IC600 transistor polar D-68623 T0600 3776a DIODE 1000 A
Contextual Info: WESTCODE An Date:- 19 Dec, 2006 Data Sheet Issue:- 1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0600TA45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V VCES Collector – emitter voltage 4500 VDC link Permanent DC voltage for 100 FIT failure rate.

T0600TB

Abstract: transistor P1
Contextual Info: WESTCODE An Date:- 16 Feb, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0600TB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

LT 5251

Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Contextual Info: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >

transistor t06

Abstract: transistor t06 19 T06 transistor
Contextual Info: Philips Semiconductors Product specification PNP switching transistor PMSS3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • Switching in e.g. telephony and professional

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

TO-213AA

Abstract: 2N3879 2N3879 JANTX TO213AA
Contextual Info: 2N3879 NPN POWER SILICON TRANSISTOR IN A HERMETICALLY SEALED METAL PACKAGE MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. 11.94 (0.470) 12.70 (0.500) 2 FEATURES 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590)

SPT6502

Abstract: SPT6503 T066
Contextual Info: m i PRELIMINARY DATA SHEET 2 AMP HIGH VOLTAGE SPT6502 Solid State Devices Incorporated 14830 Valley View Avenue La Mirada, California 90638 Telephone 213} 921-9660 TW X -910-583-4807 * * * * FEATU RES HIGH SPEED SPT6503 NPN SILICON POWER TRANSISTOR 800V BLOCKING CAPABILITY

Contextual Info: - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Description CECC Ceramic Surface Mount Dual Transistor Dual device in CSM Ceramic Surface Mount Dual device in CSM 50004-017 50004-017 50004-017 50004-017 50004-133 50004-133 50003-021 50003-021 Polarity Package lc_cont

TRANSISTOR MARKING CODE IAM

Abstract: transistor marking t06 transistor t06 transistor MARKING IAM T06 transistor PDTC124EU
Contextual Info: Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EU FEATURES • Built-in bias resistors R1 and R2 typ. 22 k£2 each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

t310m

Abstract: marking SPICE thyristor model TB3100M-13-F GR-1089-CORE J-STD-020D TB0640M TB0720M TB3500M
Contextual Info: TB0640M - TB3500M Green 50A BIDIRECTIONAL SURFACE MOUNT THYRISTOR DUAL NPN TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • 50A Peak Pulse Current @ 10/1000 s

smd transistor marking 12W

Abstract: 2N3740 equivalent 2n3741 Stancor C-2691 2N3740 C-2688 2n3741 MIL-STD 2N3741 equivalent PSC.441K 2N3740U4
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 June 2010. MIL-PRF-19500/441K 30 March 2010 SUPERSEDING MIL-PRF-19500/441J 14 November 2006 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER,

Contextual Info: BIG IDEAS IN PowerTech big po w er ” • SO AM PERES PT-3516 HIGH VOLTAGE SILICON IMPN TRANSISTOR FEATURES V c E s a t . 0 .5 @ 1 0 A h p E . 5 min. @20A I s / B . 0 .06A @ 600V